Patent application number | Description | Published |
20120169377 | Circuit Arrangement including a Common Source Sense-FET - A current sensing circuit arrangement is disclosed. The circuit arrangement includes a load transistor for controlling a load current to a load being coupled to a drain electrode of the load transistor. A sense transistor is coupled to the load transistor. The sense transistor has a drain electrode that provides a measurement current representative of the load current. The load transistor and the sense transistor are field effect transistors having a common source electrode. A measurement circuit is configured to receive the measurement current from the sense transistor and to generate an output signal therefrom, the output signal being representative of the load current. | 07-05-2012 |
20120289003 | Method for Forming a Semiconductor Device - A method for forming a semiconductor device is provided. The method includes providing a wafer-stack having a main horizontal surface, an opposite surface, a buried dielectric layer, a semiconductor wafer extending from the buried dielectric layer to the main horizontal surface, and a handling wafer extending from the buried dielectric layer to the opposite surface; etching a deep vertical trench into the semiconductor wafer at least up to the buried dielectric layer, wherein the buried dielectric layer is used as an etch stop; forming a vertical transistor structure comprising forming a first doped region in the semiconductor wafer; forming a first metallization on the main horizontal surface in ohmic contact with the first doped region; removing the handling wafer to expose the buried dielectric layer; and masked etching of the buried dielectric layer to partly expose the semiconductor wafer on a back surface opposite to the main horizontal surface. | 11-15-2012 |
20130005099 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER - A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer. | 01-03-2013 |
20130153916 | Semiconductor Device Including a Diode - One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region. | 06-20-2013 |
20130175609 | Semiconductor Device with a Low Ohmic Current Path - A semiconductor device includes a semiconductor substrate having a main horizontal surface, a back surface arranged opposite the main horizontal surface, a vertical transistor structure including a doped region and a control electrode arranged next to the main horizontal surface, an insulating region arranged at or close to the back surface, a deep vertical trench extending from the main horizontal surface through the semiconductor substrate and to the insulating region, an insulating layer arranged on a side wall of the deep vertical trench, and a low ohmic current path extending at least partially along the insulating layer and between the main horizontal surface and the back surface. A first metallization is in ohmic contact with the doped region and arranged on the main horizontal surface. A control metallization is arranged on the back surface and in ohmic contact with the control electrode via the low ohmic current path. | 07-11-2013 |
20130230956 | Trench Electrode Arrangement - A method includes forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that a first trench section and at least one second trench section adjoin the first trench section, wherein the first trench section is wider than the second trench section. A first electrode is formed, in the at least one second trench section, and dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer. An inter-electrode dielectric layer is formed, in the at least one second trench section, on the first electrode. A second electrode is formed, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, such that the second electrode at least in the first trench section is dielectrically insulated from the semiconductor body by a second dielectric layer. | 09-05-2013 |
20130234145 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane. | 09-12-2013 |
20130240955 | VERTICAL TRANSISTOR HAVING EDGE TERMINATION STRUCTURE - Described herein are embodiments of a vertical power transistor having drain and gate terminals located on the same side of a semiconductor body and capable of withstanding high voltages in the off-state, in particular voltages of more than 100V. | 09-19-2013 |
20130336033 | Integrated Power Semiconductor Component, Production Method and Chopper Circuit Comprising Integrated Semiconductor Component - A monolithically integrated power semiconductor component includes a semiconductor body having first and second regions each extending from a first surface of the semiconductor body to a second opposing surface of the body. A power field effect transistor structure formed in the first region has a first load terminal on the first surface and a second load terminal on the second surface. A power diode formed in the second region has a first load terminal on the first surface and a second load terminal on the second surface. The second load terminals of the power field effect transistor structure and power diode are formed by a common load terminal. An edge termination structure is arranged adjacent to the first surface and in a horizontal direction between the first load terminal of the power field effect transistor structure and the first load terminal of the power diode. | 12-19-2013 |
20140015046 | Current Sense Transistor with Embedding of Sense Transistor Cells - A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor. | 01-16-2014 |
20140015586 | Integrated Semiconductor Device and a Bridge Circuit with the Integrated Semiconductor Device - A bridge circuit is provided. The bridge circuit includes a first integrated semiconductor device having a high-side switch, a second integrated semiconductor device having a low-side switch electrically connected with the high-side switch, a first level-shifter electrically connected with the high-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device, and a second level-shifter electrically connected with the low-side switch and integrated in one of the first integrated semiconductor device and the second integrated semiconductor device. Further, an integrated semiconductor device is provided. | 01-16-2014 |
20140027773 | Semiconductor Device Including a Diode and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor cell array in the semiconductor body of a first conductivity type. The semiconductor device further includes a first trench in the transistor cell array between transistor cells. The first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall. | 01-30-2014 |
20140048904 | Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof - One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench. | 02-20-2014 |
20140073123 | Method for Producing a Controllable Semiconductor Component - Disclosed is a method for producing a controllable semiconductor component. In a semiconductor body with a top side and a bottom side, a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body are formed in a common etching process. The first trench has a first width and the second trench has a second width greater than the first width. Then, in a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. Subsequently, the oxide layer is removed from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench. | 03-13-2014 |
20140117438 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - A semiconductor device is at least partially formed in a semiconductor substrate, the substrate including first and second opposing main surfaces. The semiconductor device includes a cell field portion and a contact area, the contact area being electrically coupled to the cell field portion, the cell field portion including at least a transistor. The contact area includes a connection substrate portion insulated from other substrate portions and including a part of the semiconductor substrate, an electrode adjacent to the second main surface and in contact with the connection substrate portion, and a metal layer disposed over the first main surface, the connection substrate portion being electrically coupled to the metal layer to form an ohmic contact between the electrode and metal layer. The connection substrate portion is not electrically coupled to a component of the cell field portion by a conductive material disposed between the first and second main surfaces. | 05-01-2014 |
20140151758 | Semiconductor Device and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode being adjacent to the channel region, the gate electrode configured to control a conductivity of a channel formed in the channel region. The channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a ridge extending along the first direction and the drift zone including a superjunction layer stack. | 06-05-2014 |
20140151798 | Semiconductor Device and Method of Manufacturing a Semiconductor Device - A semiconductor device comprises a transistor formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode being adjacent to the channel region. The gate electrode is configured to control a conductivity of a channel formed in the channel region, the channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a first ridge extending along the first direction, and the transistor includes a first field plate arranged adjacent to the drift zone. | 06-05-2014 |
20140151804 | Semiconductor Device Including a Fin and a Drain Extension Region and Manufacturing Method - One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region. | 06-05-2014 |
20140167209 | Method of Manufacturing a Semiconductor Device and a Semiconductor Workpiece - A semiconductor device is manufactured in a semiconductor substrate comprising a first main surface, the semiconductor substrate including chip areas. The method of manufacturing the semiconductor substrate comprises forming components of the semiconductor device in the first main surface in the chip areas, removing substrate material from a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface, forming a separation trench into a first main surface of the semiconductor substrate, the separation trench being disposed between adjacent chip areas. The method further comprises forming at least one sacrificial material in the separation trench, and removing the at least one sacrificial material from the trench. | 06-19-2014 |
20140183629 | Semiconductor Device and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a channel region, doped with dopants of a first conductivity type, a source region, a drain region, the source and the drain region being doped with dopants of a second conductivity type different from the first conductivity type, a drain extension region, and a gate electrode adjacent to the channel region. The channel region is disposed in a first portion of a ridge. The drain extension region is disposed in a second portion of the ridge, and includes a core portion doped with the first conductivity type. The drain extension region further includes a cover portion doped with the second conductivity type, the cover portion being adjacent to at least one or two sidewalls of the second portion of the ridge. | 07-03-2014 |
20140209905 | Integrated Circuit, Semiconductor Device and Method of Manufacturing a Semiconductor Device - An integrated circuit including a semiconductor device has a power component including a plurality of trenches in a cell array, the plurality of trenches running in a first direction, and a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component. The integrated circuit further includes isolation trenches disposed between the sensor component and the power component, an insulating material being disposed in the isolation trenches. The isolation trenches run in a second direction that is different from the first direction. | 07-31-2014 |
20140220758 | Method for Producing a Semiconductor Device with a Vertical Dielectric Layer - A method for producing a semiconductor device is disclosed. The method includes providing a semiconductor body having a first surface, and a second surface opposite the first surface, producing a first trench having a bottom and sidewalls and extending from the first surface into the semiconductor body, forming a dielectric layer along at least one sidewall of the trench, and filling the trench with a filling material. Forming the dielectric layer includes forming a protection layer on the least one sidewall such that the protection layer leaves a section of the at least one sidewall uncovered, oxidizing the semiconductor body in the region of the uncovered sidewall section to form a first section of the dielectric layer, removing the protection layer, and forming a second section of the dielectric layer on the at least one sidewall. | 08-07-2014 |
20140264580 | Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device - A semiconductor device comprises a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode being adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The transistor further comprises a drift control region arranged adjacent to the drift zone, the drift control region being disposed over the first main surface. | 09-18-2014 |
20140312417 | Semiconductor Device and Method of Manufacturing a Semiconductor Device - A semiconductor device formed in a semiconductor substrate includes an isolation trench in the semiconductor substrate to laterally insulate adjacent components of the semiconductor device. A lateral isolation layer is disposed in the isolation trench. The semiconductor device further includes a source region and a drain region, and a body region and a drift region disposed between the source region and the drain region. The semiconductor device additionally includes a gate electrode adjacent to at least a portion of the body region and a field plate adjacent to at least a portion of the drift region. A field dielectric layer is disposed between the drift region and the field plate. A top surface of the field dielectric layer is disposed at a greater height measured from a first main surface of the semiconductor substrate than a top surface of the lateral isolation layer. | 10-23-2014 |
20140334522 | Power Transistor With Integrated Temperature Sensor Element, Power Transistor Circuit, Method for Operating a Power Transistor, and Method for Operating a Power Transistor Circuit - A power transistor has a semiconductor body with a bottom side and top side spaced distant from the bottom side in a vertical direction. The semiconductor body includes a plurality of transistor cells, a source zone of a first conduction type, a body zone of a second conduction type, a drift zone of the first conduction type, a drain zone, and a temperature sensor diode having a pn-junction between an n-doped cathode zone and a p-doped anode zone. The power transistor also has a drain contact terminal on the top side, a source contact terminal on the bottom side, a gate contact terminal, and a temperature sense contact terminal on the top side. Depending on the first and second conduction types the anode or cathode zone is electrically connected to the source contact terminal and the other diode zone is electrically connected to the temperature sense contact terminal. | 11-13-2014 |
20140339633 | Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. Trenches are disposed in the first semiconductor layer, the trenches extending in the first direction. The transistor further includes a drift control region arranged adjacent to the drift zone. The drift control region and the gate electrode are disposed in the trenches. | 11-20-2014 |
20140346590 | Semiconductor Device, Method of Manufacturing a Semiconductor Device and Integrated Circuit - A semiconductor device formed in a semiconductor substrate includes a source region, a drain region, a gate electrode, and a body region disposed between the source region and the drain region. The gate electrode is disposed adjacent at least two sides of the body region, and the source region and the gate electrode are coupled to a source terminal. A width of the body region between the two sides of the body region is selected so that the body region is configured to be fully depleted. | 11-27-2014 |
20140357048 | Method for Producing a Semiconductor Component - Methods for producing a semiconductor component that includes a transistor having a cell structure with a number of transistor cells monolithically integrated in a semiconductor body and electrically connected in parallel. In an example method, first trenches extending from the top side into the semiconductor body are produced, as are second trenches that each extend from the top side deeper into the semiconductor body than each of the first trenches. A first dielectric abutting on a first portion of the semiconductor body is produced at a surface of each of the first trenches. Also produced is a second dielectric at a surface of each of the second trenches. In each of the first trenches, a gate electrode is produced, after which a second portion of the semiconductor body is electrically insulated from the first portion of the semiconductor body by removing a bottom layer of the semiconductor body. | 12-04-2014 |
20140363940 | Method of Manufacturing a Semiconductor Device - A transistor is formed by forming a ridge including a first ridge portion and a second ridge portion in a semiconductor substrate, the ridge extending along a first direction, forming a source region, a drain region, a channel region, a drain extension region and a gate electrode adjacent to the channel region, in the ridge, doping the channel region with dopants of a first conductivity type, and doping the source region and the drain region with dopants of a second conductivity type. Forming the drain extension region includes forming a core portion doped with the first conductivity type in the second ridge portion, and forming the drain extension region further includes forming a cover portion doped with the second conductivity type, the cover portion being formed so as to be adjacent to at least one or two sidewalls of the second ridge portion. | 12-11-2014 |
20150028408 | Integrated Circuit and Method of Manufacturing an Integrated Circuit - An integrated circuit is formed in a semiconductor substrate. The integrated circuit includes a trench formed in a first main surface of the semiconductor substrate. The trench includes a first trench portion and a second trench portion. The first trench portion is connected with the second trench portion. Openings of the first and second trench portions are adjacent to the first main surface. The integrated circuit further includes a trench transistor structure including a gate electrode disposed in the first trench portion, and a trench capacitor structure including a capacitor dielectric and a first capacitor electrode. The capacitor dielectric and the first capacitor electrode are disposed in the second trench portion. The first capacitor electrode includes a layer conformal with a sidewall of the second trench portion. | 01-29-2015 |
20150069424 | Semiconductor Component and Method of Triggering Avalanche Breakdown - A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor device. An electrical coupling and an optical coupling between the auxiliary semiconductor device and the semiconductor device are configured to trigger emission of radiation by the auxiliary semiconductor device and to trigger avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device. The semiconductor device includes a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. | 03-12-2015 |
20150076590 | Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the first main surface, between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. | 03-19-2015 |
20150091083 | Semiconductor Device and Method of Manufacturing a Semiconductor Device with Lateral FET Cells and Field Plates - A method of manufacturing a semiconductor device includes providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins. A first mask is provided that covers a first area including first stripe sections of the dielectric stripe structures and first fin sections of the semiconductor fins. The first mask exposes a second area including second stripe and second fin sections. A channel/body zone is formed in the second fin sections by introducing impurities, wherein the first mask is used as an implant mask. Using an etch mask that is based on the first mask, recess grooves are formed at least in the second stripe sections. | 04-02-2015 |
20150091088 | Integrated Circuit and Method of Manufacturing an Integrated Circuit - An integrated circuit includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, a gate electrode, and a gate dielectric adjacent to the gate electrode. The gate electrode is disposed adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the main surface between the source region and the drain region. The gate dielectric has a thickness that varies at different positions of the gate electrode. | 04-02-2015 |
20150102404 | Semiconductor Device - A semiconductor device includes a transistor formed in a semiconductor substrate including a main surface. The transistor includes a source region, a drain region, a channel region, and a gate electrode. The source region and the drain region are disposed along a first direction, the first direction being parallel to the main surface. The channel region has a shape of a ridge extending along the first direction, the ridge including a top side and a first and a second sidewalls. The gate electrode is disposed at the first sidewall of the channel region, and the gate electrode is absent from the second sidewall of the channel region. | 04-16-2015 |
20150137139 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane. | 05-21-2015 |
20150137224 | Semiconductor Device, Integrated Circuit and Method of Forming a Semiconductor Device - A semiconductor device comprises a transistor formed in a semiconductor body having a first main surface. The transistor comprises a source region, a drain region, a channel region, a drift zone, a source contact electrically connected to the source region, a drain contact electrically connected to the drain region, and a gate electrode at the channel region. The channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a first ridge extending along the first direction. One of the source contact and the drain contact is adjacent to the first main surface, the other one of the source contact and the drain contact is adjacent to a second main surface that is opposite to the first main surface. | 05-21-2015 |
20150137226 | Semiconductor Device and Method for Producing a Semiconductor Device - A semiconductor device includes a semiconductor substrate having first regions of a first conductivity type and body regions of the first conductivity type, which are arranged in a manner adjoining the first region and overlap the latter in each case on a side of the first region which faces a first surface of the semiconductor substrate, and having a multiplicity of drift zone regions arranged between the first regions and composed of a semiconductor material of a second conductivity type, which is different than the first conductivity type. The first regions and the drift zone regions are arranged alternately and form a superjunction structure. The semiconductor device further includes a gate electrode formed in a trench in the semiconductor substrate. | 05-21-2015 |
20150145030 | Semiconductor Device and Integrated Circuit - A semiconductor device in a semiconductor substrate includes a first drain region and a second drain region, a first drift zone and a second drift zone, at least two gate electrodes in the semiconductor substrate, and a channel region between the gate electrodes. The first drift zone is arranged between the channel region and the first drain region, and the second drift zone is arranged between the channel region and the second drain region. The second drain region is disposed on a side of the gate electrode, the side of the gate electrode being remote from the side of the first drain region. | 05-28-2015 |
20150145074 | MEMS Device - A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers. | 05-28-2015 |
20150162192 | Method for Forming a Semiconductor Device - A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte. | 06-11-2015 |
20150162411 | METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE - A method for manufacturing a semiconductor structure is provided, which may include: forming a p-doped region adjacent to an n-doped region in a substrate; carrying out an anodic oxidation to form an oxide layer on a surface of the substrate, wherein the oxide layer in a first portion of the surface extending along the n-doped region has a greater thickness than the oxide layer in a second portion of the surface extending along the p-doped region. | 06-11-2015 |
20150162418 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE - A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate. | 06-11-2015 |
20150181658 | DEVICE HAVING A PLURALITY OF DRIVER CIRCUITS TO PROVIDE A CURRENT TO A PLURALITY OF LOADS AND METHOD OF MANUFACTURING THE SAME - In various embodiments, a device is provided. The device includes a substrate having a first side and a second side opposite the first side. The substrate includes a plurality of driver circuits at the first side of the substrate. Each of the plurality of driver circuits is configured to drive a current from the first side of the substrate to the second side of the substrate. The device further includes at least one load interface at the second side of the substrate. The at least one load interface is configured to couple the current from the plurality of the driver circuits to a plurality of loads at the second side of the substrate. | 06-25-2015 |
20150206975 | FIN-Type Semiconductor Device and Manufacturing Method - One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part of the fin, a drain extension region of a first conductivity type, a source region and a drain region of the first conductivity type, a source contact in contact with the source region, the source contact extending along a vertical direction along the source region, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region | 07-23-2015 |
20150249078 | INTEGRATED CIRCUIT HAVING AN ESD PROTECTION STRUCTURE AND PHOTON SOURCE - An integrated circuit having an ESD protection structure is described. One embodiment includes a circuit section interconnected with a first terminal and with a second terminal and being operable at voltage differences between the first terminal and second terminal of greater than +10 V and less than −10 V. The integrated circuit additionally includes an ESD protection structure operable to protect the circuit section against electrostatic discharge between the first terminal and the second terminal. The ESD protection structure is operable with voltage differences between the first and second terminals of greater than +10 V and less than −10 V without triggering. The ESD protection structure is electrically and optically coupled to a photon source such that photons emitted by the photon source upon ESD pulse loading are absorbable in the ESD protection structure and an avalanche breakdown is initiatable by electron-hole pairs generated by the absorbed photons. | 09-03-2015 |
20150262942 | Semiconductor Workpiece Having a Semiconductor Substrate with at Least Two Chip Areas - A semiconductor workpiece includes a semiconductor substrate, at least two chip areas, components of semiconductor devices being formed in the semiconductor substrate in the at least two chip areas, and a separation trench disposed between adjacent chip areas. The separation trench is formed in a first main surface of the semiconductor substrate and extends from the first main surface to a second main surface of the semiconductor substrate. The second main surface is disposed opposite to the first main surface. The separation trench is filled with at least one sacrificial material. | 09-17-2015 |
20150279978 | SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT - A semiconductor device includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a body region, and a gate electrode structure adjacent to the body region. The source region and the drain region are disposed along a first direction, the first direction being parallel to the main surface. The body region is disposed between the source region and the drain region. The body region includes an upper body region at the main surface and a lower body region remote from the main surface. A first width of the lower body region is smaller than a second width of the upper body region. The first width and the second width are measured in a direction perpendicular to the first direction. | 10-01-2015 |
Patent application number | Description | Published |
20110089532 | INTEGRATED CIRCUIT WITH ESD STRUCTURE - An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone. | 04-21-2011 |
20120133024 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - According to an embodiment, a method for manufacturing a semiconductor device is provided. The method includes providing a mask layer which is used as an implantation mask when forming a doping region and which is used as an etching mask when forming an opening and a contact element formed in the opening. The contact element is in contact with the doping region. | 05-31-2012 |
20120146130 | SEMICONDUCTOR COMPONENT WITH A SEMICONDUCTOR VIA - A method for producing a semiconductor component includes providing a semiconductor body with a first surface and a second surface opposite the first surface, forming an insulation trench which extends into the semiconductor body from the first surface and which in a horizontal plane of the semiconductor body has a geometry such that the insulation trench defines a via region of the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, removing semiconductor material of the semiconductor body from the second surface to expose at least parts of the first insulation layer, to remove at least parts of the first insulation layer, or to leave at least partially a semiconductor layer with a thickness of less than 1 μm between the first insulation layer and the second surface, and forming first and second contact electrodes on the via region. | 06-14-2012 |
20120264259 | Method for Forming a Semiconductor Device and a Semiconductor Device - A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate having a main horizontal surface, an opposite surface and a completely embedded dielectric region. A deep vertical trench is etched from the main horizontal surface into the semiconductor substrate using the dielectric region as an etch stop. A vertical transistor structure is formed in the semiconductor substrate. A first metallization in ohmic contact with the transistor structure is formed on the main horizontal surface. The semiconductor substrate is thinned at the opposite surface at least close to the dielectric region. Further, a semiconductor device is provided. | 10-18-2012 |
20120305932 | LATERAL TRENCH MESFET - A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench. | 12-06-2012 |
20120305987 | LATERAL TRENCH MESFET - A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench. | 12-06-2012 |
20120319740 | Method and Circuit for Driving an Electronic Switch - Disclosed is an electronic circuit. The electronic circuit includes a transistor having a control terminal to receive a drive signal, and a load path between a first and a second load terminal. A voltage protection circuit is coupled to the transistor, has a control input, is configured to assume one of an activated state and a deactivated state as an operation state dependent on a control signal received at the control input, and is configured to limit a voltage between the load terminals or between one of the load terminals and the control terminal. A control circuit is coupled to the control input of the voltage protection circuit and is configured to deactivate the voltage protection circuit dependent on at least one operation parameter of the transistor and when a voltage across the load path or a load current through the load path is other than zero. | 12-20-2012 |
20130005101 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER - A method for producing a semiconductor device with a dielectric layer includes: providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall; forming a first dielectric layer on the sidewall in a lower portion of the first trench; forming a first plug in the lower portion of the first trench so as to cover the first dielectric layer, the first plug leaving an upper portion of the sidewall uncovered; forming a sacrificial layer on the sidewall in the upper portion of the first trench; forming a second plug in the upper portion of the first trench; removing the sacrificial layer, so as to form a second trench having sidewalls and a bottom; and forming a second dielectric layer in the second trench and extending to the first dielectric layer. | 01-03-2013 |
20130032855 | Semiconductor Arrangement - A semiconductor arrangement includes a first and second controllable vertical n-channel semiconductor chip. Each of the controllable vertical n-channel semiconductor chips has a front side, a rear side opposite the front side, a front side main contact arranged on the front side, a rear side main contact arranged on the rear side, and a gate contact arranged on the front side for controlling an electric current between the front side main contact and the rear side main contact. The rear side contacts of the first and second semiconductor chips are electrically connected to one another. | 02-07-2013 |
20130075814 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR VIA - A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface. The semiconductor via is electrically insulated from the semiconductor body by a via insulation layer. The at least one electrode extends in a first lateral direction of the semiconductor body through the via insulation layer and is electrically connected to the semiconductor via. | 03-28-2013 |
20130099308 | Semiconductor Device Having a Through Contact and a Manufacturing Method Therefor - According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material. | 04-25-2013 |
20130307062 | Vertical Transistor Component - A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode. | 11-21-2013 |
20140210052 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - According to an embodiment, a method for manufacturing a semiconductor device is provided. The method includes providing a mask layer which is used as an implantation mask when forming a doping region and which is used as an etching mask when forming an opening and a contact element formed in the opening. The contact element is in contact with the doping region. | 07-31-2014 |
20140299972 | SEMICONDUCTOR DEVICE HAVING A THROUGH CONTACT - A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa. | 10-09-2014 |
20150214357 | Vertical Transistor Component - A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode. | 07-30-2015 |
Patent application number | Description | Published |
20130031757 | METHOD OF FORMING SHEET METAL CASKET SHELL - A method of forming a portion of a sheet metal casket shell comprises supporting a piece of sheet metal on one side with a female die having a center die portion and opposite end die portions configured to pivot relative to the center die portion, supporting the piece of sheet metal on the opposite side with a male die having a center die portion and opposite end die portions, and pivoting the end die portions of the female die relative to the center die portion of the female die to cause the opposite ends of the piece of sheet metal to fold around the end die portions of the male die. The method can be repeated with a second piece of sheet metal thereby forming two shell halves which can be welded together to form the shell. | 02-07-2013 |
20130125357 | CASKET AND DISPLAY BASE - A combination casket and casket display comprises a reduced height casket shell adapted to receive the remains of a deceased and having a pair of side walls, a pair of end walls, and a bottom wall, the side walls and end walls having lower edges, the bottom wall extending below the lower edges of the side walls and end walls, a casket lid closable on the reduced height casket shell, and a casket display base having a pair of side walls and a pair of end walls, the side walls and end walls having upper edges. The reduced height casket shell is supported by the casket display base such that the lower edges of the side walls and end walls of the reduced height casket shell are at about the same height as the upper edges of the side walls and end walls of the casket display base, and the bottom wall of the reduced height casket shell extends below the upper edges of the side walls and end walls of the casket display base so as to nest within the casket display base. A combined height of the reduced height casket shell and display base is about equal to a height of a conventional height casket shell. | 05-23-2013 |
20130191239 | Method Of Personalizing And Merchandising Caskets At Point Of Purchase - A method of merchandising caskets by a casket seller at the point of purchase of a casket purchaser comprises displaying a plurality of untrimmed caskets from which the purchaser may select, each casket of the plurality of caskets being of a different material, color, or design, displaying a plurality of packaged casket interior trim component sets from which the purchaser may select, each set of the plurality of sets containing trim components being of a different material, color, or design, and installing the casket interior trim components of the purchaser selected set into the purchaser selected casket. The casket interior components can include one or more, or all, of a mattress cover, a pillow cover, a big body, a small body, and an overthrow, in any combination. | 07-25-2013 |
20140041170 | APPARATUS FOR ATTACHING PERSONAL ITEM TO CASKET FOR DISPLAY AS CASKET ORNAMENT - A method of memorializing a deceased comprises the steps of receiving, subsequent to the death of the deceased and prior to a funeral or other memorial service for the deceased, a selection of a personal item of personal significance to the deceased, attaching the personal item to an ornament base, and attaching the ornament base, with the personal item attached thereto, to a casket for the deceased. | 02-13-2014 |
20140096454 | METHODS AND APPARATUS FOR CLAMPING VAULT LID TO VAULT BASE TO ESTABLISH SEAL THEREBETWEEN - A method of establishing a seal between a casket vault lid and a casket vault base comprises the steps of positioning a gasket between confronting generally horizontal surfaces of the lid and base, positioning a base engagement member of a clamping assembly in a recess in the base, positioning a lid engagement member of the clamping assembly in a recess in the lid, and operating the clamping assembly so as to draw the base engagement member and the lid engagement member toward one another to thereby compress the gasket between the confronting generally horizontal surfaces of the lid and base. | 04-10-2014 |
20140208552 | CASKET AND DISPLAY BASE - A combination casket and casket display comprises a reduced height casket shell adapted to receive the remains of a deceased and having a pair of side walls, a pair of end walls, and a bottom wall, the side walls and end walls having lower edges, the bottom wall extending below the lower edges of the side walls and end walls, a casket lid closable on the reduced height casket shell, and a casket display base having a pair of side walls and a pair of end walls, the side walls and end walls having upper edges. The reduced height casket shell is supported by the casket display base such that the lower edges of the side walls and end walls of the reduced height casket shell are at about the same height as the upper edges of the side walls and end walls of the casket display base, and the bottom wall of the reduced height casket shell extends below the upper edges of the side walls and end walls of the casket display base so as to nest within the casket display base. A combined height of the reduced height casket shell and display base is about equal to a height of a conventional height casket shell. | 07-31-2014 |
20140259574 | METHOD OF FORMING SHEET METAL CASKET SHELL - A method of forming a portion of a sheet metal casket shell, the casket shell having a pair of opposed side walls and a pair of opposed end walls, the portion of the casket shell being formed from a piece of sheet metal having a desired profile, opposite ends, and a length about equal to the combined length of one of the side walls and one of the end walls of the casket shell, comprises the steps of supporting the piece of sheet metal on one side with a female die having a center die portion and opposite end die portions configured to pivot relative to the center die portion, supporting the piece of sheet metal on the opposite side with a male die having a center die portion and opposite end die portions, and pivoting the end die portions of the female die relative to the center die portion of the female die to cause the opposite ends of the piece of sheet metal to fold around the end die portions of the male die, the resulting portion of the casket shell having a side wall, about half of one end wall at one end of the side wall, and about half of the other end wall at the other end of the side wall. The method can be repeated with a second piece of sheet metal thereby forming two shell halves which can be welded together to form the shell. | 09-18-2014 |
20150290067 | CASKET AND DISPLAY BASE - A combination casket and casket display comprises a reduced height casket shell adapted to receive the remains of a deceased and having a pair of side walls, a pair of end walls, and a bottom wall, the side walls and end walls having lower edges, the bottom wall extending below the lower edges of the side walls and end walls, a casket lid closable on the reduced height casket shell, and a casket display base having a pair of side walls and a pair of end walls, the side walls and end walls having upper edges. The reduced height casket shell is supported by the casket display base such that the lower edges of the side walls and end walls of the reduced height casket shell are at about the same height as the upper edges of the side walls and end walls of the casket display base, and the bottom wall of the reduced height casket shell extends below the upper edges of the side walls and end walls of the casket display base so as to nest within the casket display base. A combined height of the reduced height casket shell and display base is about equal to a height of a conventional height casket shell. | 10-15-2015 |
Patent application number | Description | Published |
20120135047 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 05-31-2012 |
20120135048 | NOVEL FORMULATION OF INDOMETHACIN - The present invention relates to methods for producing particles of indomethacin using dry milling processes as well as compositions comprising indomethacin, medicaments produced using indomethacin in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of indomethacin administered by way of said medicaments. | 05-31-2012 |
20120141548 | NOVEL FORMULATION OF MELOXICAM - The present invention relates to methods for producing particles of meloxicam using dry milling processes as well as compositions comprising meloxicam, medicaments produced using meloxicam in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of meloxicam administered by way of said medicaments. | 06-07-2012 |
20120148634 | NOVEL FORMULATION OF NAPROXEN - The present invention relates to methods for producing particles of naproxen using dry milling processes as well as compositions comprising naproxen, medicaments produced using naproxen in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of naproxen administered by way of said medicaments. | 06-14-2012 |
20120160944 | METHOD FOR THE PRODUCTION OF COMMERCIAL NANOPARTICLE AND MICRO PARTICLE POWDERS - The present invention relates to methods for producing nanoparticle and microparticle powders of a biologically active material which have improved powder handling properties making the powders suitable for commercial use using dry milling processes as well as compositions comprising such materials, medicaments produced using said biologically active materials in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of said biologically active materials administered by way of said medicaments. | 06-28-2012 |
20120165323 | METHOD FOR IMPROVING THE DISSOLUTION PROFILE OF A BIOLOGICALLY ACTIVE MATERIAL - The present invention relates to a method for improving the dissolution profile of a biologically active material comprising the steps of dry milling a solid biologically active material and a millable grinding matrix in a mill comprising a plurality of milling bodies, for a time period sufficient to produce particles of the biologically active material dispersed in an at least partially milled grinding material. | 06-28-2012 |
20120165410 | PRODUCTION OF ENCAPSULATED NANOPARTICLES AT HIGH VOLUME FRACTIONS - The present invention relates to methods for producing particles of a biologically active material using dry milling processes as well as compositions comprising such materials, medicaments produced using said biologically active materials in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of said biologically active materials administered by way of said medicaments. | 06-28-2012 |
20120202694 | PRODUCTION OF ENCAPSULATED NANOPARTICLES AT COMMERCIAL SCALE - The present invention relates to methods for producing particles of a biologically active material using dry milling processes as well as compositions comprising such materials, medicaments produced using said biologically active materials in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of said biologically active materials administered by way of said medicaments. | 08-09-2012 |
20120263760 | NOVEL FORMULATION OF METAXALONE - The present invention relates to methods for producing particles of metaxalone using dry milling processes as well as compositions comprising metaxalone, medicaments produced using metaxalone in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of metaxalone administered by way of said medicaments. | 10-18-2012 |
20140199395 | NOVEL FORMULATION OF MELOXICAM - The present invention relates to methods for producing particles of meloxicam using dry milling processes as well as compositions comprising meloxicam, medicaments produced using meloxicam in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of meloxicam administered by way of said medicaments. | 07-17-2014 |
20140200276 | NOVEL FORMULATION OF NAPROXEN - The present invention relates to methods for producing particles of naproxen using dry milling processes as well as compositions comprising naproxen, medicaments produced using naproxen in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of naproxen administered by way of said medicaments. | 07-17-2014 |
20140220121 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 08-07-2014 |
20140248359 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 09-04-2014 |
20140302127 | Novel formulation of metaxalone - The present invention relates to methods for producing particles of metaxalone using dry milling processes as well as compositions comprising metaxalone, medicaments produced using metaxalone in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of metaxalone administered by way of said medicaments. | 10-09-2014 |
20140326812 | Method for the Production of Commercial Nanoparticle and Microparticle Powders - The present invention relates to methods for producing nanoparticle and microparticle powders of a biologically active material which have improved powder handling properties making the powders suitable for commercial use using dry milling processes as well as compositions comprising such materials, medicaments produced using said biologically active materials in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of said biologically active materials administered by way of said medicaments. | 11-06-2014 |
20150087709 | Novel Formulation of Naproxen - The present invention relates to methods for producing particles of naproxen using dry milling processes as well as compositions comprising naproxen, medicaments produced using naproxen in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of naproxen administered by way of said medicaments. | 03-26-2015 |
20150150805 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 06-04-2015 |
20150150823 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 06-04-2015 |
20150150824 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 06-04-2015 |
20150157573 | NOVEL FORMULATION OF DICLOFENAC - The present invention relates to methods for producing particles of diclofenac using dry milling processes as well as compositions comprising diclofenac, medicaments produced using diclofenac in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of diclofenac administered by way of said medicaments. | 06-11-2015 |
20150209796 | PRODUCTION OF ENCAPSULATED NANOPARTICLES AT COMMERCIAL SCALE - The present invention relates to methods for producing particles of a biologically active material using dry milling processes as well as compositions comprising such materials, medicaments produced using said biologically active materials in particulate form and/or compositions, and to methods of treatment of an animal, including man, using a therapeutically effective amount of said biologically active materials administered by way of said medicaments. | 07-30-2015 |