| Patent application number | Description | Published |
|---|
| 20090207435 | IMAGE SCANNING APPARATUS, IMAGE FORMING APPARATUS AND IMAGE SCANNING METHOD - An image scanning apparatus according to the invention includes: a scanning unit configured to scan each of plural images from plural originals that are inputted; a rotation designating unit configured to designate rotation of the plural images that are scanned, so that an orientation of the plural images that are scanned coincides with a desired image orientation; a first image rotating unit configured to rotate the image that is scanned, in accordance with the designated rotation of the image; an orientation determining unit configured to determine whether the image orientation rotated by the first image rotating unit coincides with the desired image orientation or not; and a second image rotating unit configured to, for an image determined as not coinciding by the orientation determining unit, further rotate the orientation of the image so that the orientation coincides with the desired image orientation. | 08-20-2009 |
| 20090244559 | IMAGE RASTERIZING APPARATUS AND IMAGE RASTERIZING METHOD - An image rasterizing apparatus according to the invention includes: an input unit configured to input an image file or image file information including first bitmap images that are drawn in accordance with a command and have different image attributes; a bitmap image generating unit configured to create a second bitmap image at least from the first bitmap image; and an attribute signal generating unit configured to search attribute information held by the first bitmap image on the basis of the command, then decide a data format of the first bitmap image in accordance with the attribute information, and generate an attribute signal indicating the decided data format. With the image rasterizing apparatus according to the invention, different attribute signals can be outputted in accordance with image attributes, from an image file including bitmap data having different image attributes. | 10-01-2009 |
| 20090323090 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - An image forming apparatus includes a function selection unit configured to acquire an operation function of the image forming apparatus by selection of a user, a first distortion detection and correction unit configured to detect and correct distortion of an input image by a first method when a first operation function is selected, a second distortion detection and correction unit configured to detect and correct the distortion of the input image by a second method different from the first method when a second operation function is selected, and an image output unit configured to output the input image of which the distortion is corrected. | 12-31-2009 |
| Patent application number | Description | Published |
|---|
| 20090064765 | Method of Manufacturing Semiconductor Device - A method of manufacturing a semiconductor device including the step of: carrying a substrate into a reaction tube; processing the substrate by supplying a gas into the reaction tube from a gas supply line, while exhausting an inside of the reaction tube through the exhaust line by means of an exhaust device and controlling pressure in the reaction tube on the basis of an output from a pressure sensor provided in the exhaust line; carrying the processed substrate out from the reaction tube; and carrying out a leakage check for a gas flowing path including the gas supply line, the reaction tube and the exhaust line, wherein, in the step of carrying out the leakage check, the gas flowing path is divided into plural sections connecting with at least the pressure sensor and the exhaust device, the respective sections are exhausted by means of the exhaust device with an upstream end of each section being closed and pressure in each section is measured by means of the pressure sensor to judge for every section whether leakage is found in the gas flowing path or not on the basis of the measured pressure. | 03-12-2009 |
| 20090170337 | Device for Processing Substrate and Method of Manufacturing Semiconductor Device - Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate. The substrate processing apparatus has: a process chamber for processing a substrate; a reactive gas-supplying module for supplying a reactive gas into the process chamber; a reactive gas-supplying line for supplying the reactive gas from the reactive gas-supplying module into the process chamber; an exhaust line for exhausting an inside of the process chamber; a pump provided in the exhaust line for vacuumizing the inside of the process chamber; a pressure-adjusting valve provided in the exhaust line for adjusting a pressure in the process chamber; a first pressure-measuring instrument for measuring an inside pressure of the process chamber; a second pressure-measuring instrument for measuring a differential pressure between the inside pressure of the process chamber and an outside pressure thereof; and a controller which controls the pressure-adjusting valve based on a value of the inside pressure of the process chamber measured by the first pressure-measuring instrument so as to keep the inside pressure of the process chamber constant, and controls the reactive gas-supplying module based on a value of the differential pressure measured by the second pressure-measuring instrument so as to allow supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being smaller than the outside pressure thereof, and so as to preclude supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being larger than the outside pressure thereof when processing the substrate. | 07-02-2009 |
| 20100136714 | Device for processing substrate and method of manufacturing semiconductor device - Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate. The substrate processing apparatus has: a process chamber for processing a substrate; a reactive gas-supplying module for supplying a reactive gas into the process chamber; a reactive gas-supplying line for supplying the reactive gas from the reactive gas-supplying module into the process chamber; an exhaust line for exhausting an inside of the process chamber; a pump provided in the exhaust line for vacuumizing the inside of the process chamber; a pressure-adjusting valve provided in the exhaust line for adjusting a pressure in the process chamber; a first pressure-measuring instrument for measuring an inside pressure of the process chamber; a second pressure-measuring instrument for measuring a differential pressure between the inside pressure of the process chamber and an outside pressure thereof; and a controller which controls the pressure-adjusting valve based on a value of the inside pressure of the process chamber measured by the first pressure-measuring instrument so as to keep the inside pressure of the process chamber constant, and controls the reactive gas-supplying module based on a value of the differential pressure measured by the second pressure-measuring instrument so as to allow supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being smaller than the outside pressure thereof, and so as to preclude supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being larger than the outside pressure thereof when processing the substrate. | 06-03-2010 |
| 20100192855 | Manufacturing method of a semiconductor device, and substrate processing apparatus - An object of this invention is to make it possible to suppress early-stage oxidation of a substrate surface prior to oxidation processing, and to remove a natural oxidation film. For this reason, a method is provided comprising the steps of loading a substrate into a processing chamber, supplying a hydrogen-containing gas and an oxygen-containing gas into the processing chamber, and subjecting a surface of the substrate to oxidation processing, and unloading the substrate subjected to oxidation processing from the processing chamber. In the oxidation processing step, the hydrogen-containing gas is introduced in advance into the processing chamber, with the pressure inside the processing chamber set at a pressure that is less than atmospheric pressure, and the oxygen-containing gas is then introduced in the state in which the introduction of the hydrogen-containing gas is continued. | 08-05-2010 |
| 20110065286 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region. The oxygen-containing gas and the hydrogen-containing gas reacts with each other in the mixing part to produce an oxidation species containing atomic oxygen, and the oxidation species has a maximum concentration at an ejection hole through which the oxidation species is ejected from the mixing part into the process chamber. | 03-17-2011 |
