Patent application number | Description | Published |
20090246194 | ERYTHROPOIETIN ANALOG-IgG FUSION PROTEINS - Erythropoietin analog-human IgG fusion protein (EPOa-IgG) fusion protein and methods of making and using the fusion protein. | 10-01-2009 |
20100021612 | METHOD FOR THE PRODUCTION OF FUSION PROTEINS IN TRANSGENIC MAMMAL MILK - Desirable fusion proteins can be produced in and purified from the milk of transgenic animals. The peptides are made as fusion proteins with a suitable fusion partner such as human alpha-fetoprotein. The fusion partner protein acts to promote and increase the half-life of the overall molecule as well as having therapeutic effects on its own. The fusion protein is typically produced through the use of transgenic animals and can be purified away from the now the milk or other bodily fluid of such an animal by an affinity purification method. A particular advantage of producing peptides via this route, in addition to the obvious advantages of high yield and biocompatibility, is that specific post-translational modifications, such as carboxy terminal amidation, can be performed in the mammary gland. Biologically active polypeptides comprising a therapeutically active polypeptide fused to human alpha-fetoprotein fragment or a variant thereof, methods for the preparation thereof, nucleotide sequences encoding such fusion polypeptides, expression cassettes comprising such nucleotide sequences, self-replicating plasmids containing such expression cassettes, and pharmaceutical compositions containing said fusion polypeptides. | 01-28-2010 |
20110104049 | METHOD OF USING AN ANTI-CD137 ANTIBODY AS AN AGENT FOR RADIOIMMUNOTHERAPY OR RADIOIMMUNODETECTION - The current invention relates to the development and methods of use of a recombinant agonistic antibody anti-human CD137, and glycosylation variants thereof. These antibodies act as anti-cancer agents and/or immune modulators that are effective in shrinking solid tumors or other cancerous indications and preventing their recurrence. The types of cancer for which the contemplated antibody is effective in treating also include leukemia and lymphoma. In a preferred embodiment the recombinant antibodies of the current invention were produced in and purified from the milk of transgenic animals. In another preferred embodiment of the current invention the agonistic anti-CD137 antibodies of the invention can be conjugated to radionuclides for radioimmunodetection or radioimmunotherapeutic purposes, or conjugated to a toxin for enhanced therapeutic treatment of various cancers. | 05-05-2011 |
20110229460 | ANTI-CD137 ANTIBODY AS AN AGENT IN THE TREATMENT OF INFLAMMATORY CONDITIONS - The present invention relates to the treatment of inflammatory conditions including atherosclerosis and sepsis. In particular, the invention relates to treatment of these conditions using antibodies. | 09-22-2011 |
20120058047 | METHOD OF USING AN ANTI-CD137 ANTIBODY AS AN AGENT FOR RADIOIMMUNOTHERAPY OR RADIOIMMUNODETECTION - The current invention relates to the development and methods of use of a recombinant agonistic antibody anti-human CD137, and glycosylation variants thereof. These antibodies act as anti-cancer agents and/or immune modulators that are effective in shrinking solid tumors or other cancerous indications and preventing their recurrence. The types of cancer for which the contemplated antibody is effective in treating also include leukemia and lymphoma. In a preferred embodiment the recombinant antibodies of the current invention were produced in and purified from the milk of transgenic animals. In another preferred embodiment of the current invention the agonistic anti-CD137 antibodies of the invention can be conjugated to radionuclides for radioimmunodetection or radioimmunotherapeutic purposes, or conjugated to a toxin for enhanced therapeutic treatment of various cancers. | 03-08-2012 |
20130149301 | ANTI-CD137 ANTIBODY AS AN AGENT IN THE TREATMENT OF INFLAMMATORY CONDITIONS - The present invention relates to the treatment of inflammatory conditions including atherosclerosis and sepsis. In particular, the invention relates to treatment of these conditions using antibodies. | 06-13-2013 |
20140046033 | ANTIBODIES WITH ENHANCED ANTIBODY-DEPENDENT CELLULAR CYTOTOXICITY ACTIVITY, METHODS OF THEIR PRODUCTION AND USE - The invention relates, in part, to antibodies with increased ADCC activity. Methods of producing such antibodies are also provided. The antibodies of the invention are produced in mammary epithelial cells, such as those in a non-human transgenic animal engineered to express and secrete the antibody in its milk. The antibodies or compositions comprising the antibodies can be used to treat disease in which ADCC activity provides a benefit. In one embodiment, therefore, the antibodies or compositions comprising the antibodies can be used to treat cancer, lymphoproliferative disease or autoimmune disease. | 02-13-2014 |
20150368334 | HIGHLY GALACTOSYLATED ANTI-TNF-ALPHA ANTIBODIES AND USES THEREOF - In one aspect, the disclosure relates to highly galactosylated anti-TNF-alpha antibodies and compositions thereof. In one aspect, the disclosure relates to populations of anti-TNF-alpha antibodies with a high level of galactosylation, and compositions thereof. In one aspect, the disclosure relates to methods of production and use of highly galactosylated anti-TNF-alpha antibodies and populations of anti-TNF-alpha antibodies with a high level of galactosylation. In some embodiments, the anti-TNF-alpha antibody is adalimumab. | 12-24-2015 |
20150368357 | HIGHLY GALACTOSYLATED ANTI-HER2 ANTIBODIES AND USES THEREOF - In one aspect, the disclosure relates to highly galactosylated anti-HER2 antibodies and compositions thereof. In one aspect, the disclosure relates to populations of anti-HER2 antibodies with a high level of galactosylation, and compositions thereof. In one aspect, the disclosure relates to methods of production and use of highly galactosylated anti-HER2 antibodies and populations of anti-HER2 antibodies with a high level of galactosylation. In some embodiments the anti-HER-2 antibody is trastuzumab. | 12-24-2015 |
20150374801 | PROTEINS WITH MODIFIED GLYCOSYLATION AND METHODS OF PRODUCTION THEREOF - In one aspect, the disclosure provides proteins with modified glycosylation and methods of their production. In aspect, the disclosure provides transgenic animals and cells for the production of proteins with modified glycosylation. In some embodiment, the modified glycosylation is increased sialylation. | 12-31-2015 |
20160002330 | CETUXIMAB WITH MODIFIED GLYCOSYLATION AND USES THEREOF - In one aspect, the disclosure relates to antibodies with altered glycosylation patterns, methods of production of said antibodies, and methods of use thereof. In some embodiments, the antibody is cetuximab. | 01-07-2016 |
20160039913 | THE USE OF ANTIBODIES IN TREATING HIV INFECTION AND SUPPRESSING HIV TRANSMISSION - In one aspect, the disclosure provides methods of treating HIV and decreasing the chance of HIV infection in a subject, and compositions used in these methods. | 02-11-2016 |
Patent application number | Description | Published |
20120065475 | METHODS, SYSTEMS, AND APPARATUS FOR PERFORMING MINIMALLY INVASIVE CORONARY ARTERY BYPASS GRAFT SURGERY - A system for performing vascular surgery includes a first retractor blade and a second retractor blade and a fulcrum device. The first retractor blade includes a first grasping bar, and the second retractor blade comprises a second grasping bar. The first retractor blade and the second retractor blade are adapted to engage opposing edges of a subcostal incision in a patient. The fulcrum device includes a first fulcrum slot and a second fulcrum slot formed through opposing edges of the fulcrum device. The first fulcrum slot is adapted to receive the first grasping bar and the second fulcrum slot is adapted to receive the second grasping bar, such that the fulcrum device is adapted to apply leverage from the first retractor blade and the second retractor blade to spread the edges of the incision and to allow access to a chest cavity of the patient. | 03-15-2012 |
20130295673 | SYSTEMS AND METHODS FOR PROCESSING CELLS - The present invention efficiently and cost-effectively extracts and collects cells from a tissue. The inventors have discovered that the tissue can be effectively fragmented and the resulting cells can be purified using a system or kit with multiple components. An advantage of the present invention is that tissue processing takes place in a closed system such that sterility can be maintained throughout the process, even if certain components are removed during processing, for example through the use of valves, clamps, and heat seals. Furthermore, any or all of the steps can be automated or manually accomplished, according to the specific needs of the application or the user. | 11-07-2013 |
20150079672 | SYSTEMS AND METHODS FOR PROCESSING CELLS - The present invention efficiently and cost-effectively extracts and collects cells from a tissue. The inventors have discovered that the tissue can be effectively fragmented and the resulting cells can be purified using a system or kit with multiple components. An advantage of the present invention is that tissue processing takes place in a closed system such that sterility can be maintained throughout the process, even if certain components are removed during processing, for example through the use of valves, clamps, and heat seals. Furthermore, any or all of the steps can be automated or manually accomplished, according to the specific needs of the application or the user. | 03-19-2015 |
20150079679 | SYSTEMS AND METHODS FOR PROCESSING CELLS - The present invention efficiently and cost-effectively extracts and collects cells from a tissue. The inventors have discovered that the tissue can be effectively fragmented and the resulting cells can be purified using a system or kit with multiple components. An advantage of the present invention is that tissue processing takes place in a closed system such that sterility can be maintained throughout the process, even if certain components are removed during processing, for example through the use of valves, clamps, and heat seals. Furthermore, any or all of the steps can be automated or manually accomplished, according to the specific needs of the application or the user. | 03-19-2015 |
20150132851 | SYSTEMS AND METHODS FOR PROCESSING CELLS - The present invention efficiently and cost-effectively extracts and collects cells from a tissue. The inventors have discovered that the tissue can be effectively fragmented and the resulting cells can be purified using a system or kit with multiple components. An advantage of the present invention is that tissue processing takes place in a closed system such that sterility can be maintained throughout the process, even if certain components are removed during processing, for example through the use of valves, clamps, and heat seals. Furthermore, any or all of the steps can be automated or manually accomplished, according to the specific needs of the application or the user. | 05-14-2015 |
20150209046 | METHODS, SYSTEMS, AND APPARATUS FOR PERFORMING MINIMALLY INVASIVE CORONARY ARTERY BYPASS GRAFT SURGERY - A system for performing vascular surgery includes a first retractor blade and a second retractor blade and a fulcrum device. The first retractor blade includes a first grasping bar, and the second retractor blade comprises a second grasping bar. The first retractor blade and the second retractor blade are adapted to engage opposing edges of a subcostal incision in a patient. The fulcrum device includes a first fulcrum slot and a second fulcrum slot formed through opposing edges of the fulcrum device. The first fulcrum slot is adapted to receive the first grasping bar and the second fulcrum slot is adapted to receive the second grasping bar, such that the fulcrum device is adapted to apply leverage from the first retractor blade and the second retractor blade to spread the edges of the incision and to allow access to a chest cavity of the patient. | 07-30-2015 |
20160083691 | SYSTEMS AND METHODS FOR PROCESSING CELLS - The present invention efficiently and cost-effectively extracts and collects cells from a tissue. The inventors have discovered that the tissue can be effectively fragmented and the resulting cells can be purified using a system or kit with multiple components. An advantage of the present invention is that tissue processing takes place in a closed system such that sterility can be maintained throughout the process, even if certain components are removed during processing, for example through the use of valves, clamps, and heat seals. Furthermore, any or all of the steps can be automated or manually accomplished, according to the specific needs of the application or the user. | 03-24-2016 |
Patent application number | Description | Published |
20080300607 | Apparatus and Method for Introducing Implants - In one embodiment, an introducer includes a handle, a needle extending from the handle, the needle having a distal end and defining an inner lumen, the needle further having an opening that provides access to the inner lumen, a snare having an implant coupling element, the snare being positioned within the inner lumen of the needle, the snare being extendable from the needle opening to an extended position in which the implant coupling element is positioned outside of the inner lumen and retractable to a retracted position in which at least a portion of the implant coupling element is positioned within the inner lumen, and a snare extension mechanism provided on the handle, the extension mechanism being configured to alternately extend and retract the snare. | 12-04-2008 |
20100010501 | APPARATUS AND METHOD FOR INTRODUCING IMPLANTS - In one embodiment, an introducer includes a handle, a needle extending from the handle, the needle having a distal end and defining an inner lumen, the needle further having an opening that provides access to the inner lumen, a snare having an implant coupling element, the snare being positioned within the inner lumen of the needle, the snare being extendable from the needle opening to an extended position in which the implant coupling element is positioned outside of the inner lumen and retractable to a retracted position in which at least a portion of the implant coupling element is positioned within the inner lumen, and a snare extension mechanism provided on the handle, the extension mechanism being configured to alternately extend and retract the snare. | 01-14-2010 |
20100217069 | IMPLANTABLE INTRODUCER - In one embodiment, an introducer includes a needle having an inner lumen and an opening that provides access to the inner lumen, an extendible snare positioned within the inner lumen of the needle, the snare having an implant coupling element, and a sheath provided on the needle, the sheath being positionable in a first position in which the sheath substantially surrounds the needle and a second position in which the sheath extends beyond a tip of the needle. | 08-26-2010 |
20100234681 | URETHRAL SUPPORT SYSTEM - A urethral support system is described, including an introducer device and tissue implant. The introducer device may include a needle with multiple curves, some of the curves having multiple radii. A sheath assembly may be utilized to assist the passing of the tissue implant through a patient's tissue. The sheath assembly may include connectors configured to connect the sheath assembly to an end of the needle and a tab configured to detachably couple sheath sides over the tissue implant. | 09-16-2010 |
20100241105 | SYSTEM FOR INTRODUCING IMPLANTS - In one embodiment, an introducer system includes an introducer needle having a proximal end and a distal end and defining an inner lumen, the introducer needle further having an opening that provides access to the inner lumen, and a snare having an implant coupling element, the snare being configured to be positioned within the inner lumen of the introducer needle, wherein the snare is extendable from the introducer needle opening to an extended position in which the implant coupling element is positioned outside of the inner lumen and retractable to a retracted position in which the implant coupling element is positioned within the inner lumen. | 09-23-2010 |
Patent application number | Description | Published |
20110155994 | STRUCTURES FOR RESISTANCE RANDOM ACCESS MEMORY AND METHODS OF FORMING THE SAME - Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap. | 06-30-2011 |
20110275195 | METHOD OF TREATING A SEMICONDUCTOR DEVICE - A method of treating a semiconductor device wherein there is provided a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species. The semiconductor device is subjected to light of a wavelength sufficient to cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species, and the semiconductor device is exposed to a source of a desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species. | 11-10-2011 |
20120001253 | FLATBAND VOLTAGE ADJUSTMENT IN A SEMICONDUCTOR DEVICE - Memory devices, methods for fabricating, and methods for adjusting flatband voltages are disclosed. In one such memory device, a pair of source/drain regions are formed in a semiconductor. A dielectric material is formed on the semiconductor between the pair of source/drain regions. A control gate is formed on the dielectric material. A charged species is introduced into the dielectric material. The charged species, e.g., mobile ions, has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A flatband voltage of the memory device can be adjusted by moving the charged species to different levels within the dielectric material, thus programming different states into the device. | 01-05-2012 |
20120301068 | OPTICAL WAVEGUIDE WITH CASCADED MODULATOR CIRCUITS - A silicon optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along a silicon optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature. | 11-29-2012 |
20130188903 | PHOTONIC DEVICE AND METHODS OF FORMATION - A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal. | 07-25-2013 |
20130202246 | ACTIVE ALIGNMENT OF OPTICAL FIBER TO CHIP USING LIQUID CRYSTALS - Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system. | 08-08-2013 |
20130279848 | METHOD AND APPARATUS PROVIDING A COUPLED PHOTONIC STRUCTURE - Described embodiments include optical connections for electronic-photonic devices, such as optical waveguides and photonic detectors for receiving optical waves from the optical waveguides and directing the optical waves to a common point. Methods of fabricating such connections are also described. | 10-24-2013 |
20130322811 | METHOD AND STRUCTURE PROVIDING OPTICAL ISOLATION OF A WAVEGUIDE ON A SILICON-ON-INSULATOR SUBSTRATE - Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region. | 12-05-2013 |
20130336613 | METHODS AND APPARATUS PROVIDING THERMAL ISOLATION OF PHOTONIC DEVICES - Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described. | 12-19-2013 |
20140016931 | METHOD AND APPARATUS PROVIDING WAVE DIVISION MULTIPLEXING OPTICAL COMMUNICATION SYSTEM WITH ACTIVE CARRIER HOPPING - A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit. | 01-16-2014 |
20140054736 | METHOD AND APPARATUS FOR REDUCING SIGNAL LOSS IN A PHOTO DETECTOR - Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal. | 02-27-2014 |
20140126854 | OPTICAL WAVEGUIDE WITH CASCADED MODULATOR CIRCUITS - An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature. | 05-08-2014 |
20140153867 | PHOTONIC DEVICE AND METHODS OF FORMATION - A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal. | 06-05-2014 |
20140175596 | SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE - A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate. | 06-26-2014 |
20140185983 | APPARATUS PROVIDING SIMPLIFIED ALIGNMENT OF OPTICAL FIBER IN PHOTONIC INTEGRATED CIRCUITS - A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads. | 07-03-2014 |
20140205289 | METHOD AND APPARATUS PROVIDING WAVE DIVISION MULTIPLEXING OPTICAL COMMUNICATION SYSTEM WITH ACTIVE CARRIER HOPPING - A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit. | 07-24-2014 |
20140241682 | PHOTONIC DEVICE STRUCTURE AND METHOD OF MANUFACTURE - Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity. | 08-28-2014 |
20140341503 | SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE - A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate. | 11-20-2014 |
20140369107 | STRUCTURES FOR RESISTANCE RANDOM ACCESS MEMORY AND METHODS OF FORMING THE SAME - Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap. | 12-18-2014 |
20150044811 | METHOD AND APPARATUS FOR REDUCING SIGNAL LOSS IN A PHOTO DETECTOR - Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal. | 02-12-2015 |
20150063826 | OPTICAL WAVEGUIDE WITH CASCADED MODULATOR CIRCUITS - An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature. | 03-05-2015 |
20150108596 | METHOD PROVIDING AN EPITAXIAL PHOTONIC DEVICE HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE - A method of forming a photonic device and resulting structure are described in which the photonic device is epitaxially grown over a substrate surface vertically, and laterally over trench isolation regions formed in the substrate surface. | 04-23-2015 |
20150108600 | METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE - Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material. | 04-23-2015 |
20150115349 | METHODS OF FABRICATING MEMORY DEVICES HAVING CHARGED SPECIES AND METHODS OF ADJUSTING FLATBAND VOLTAGE IN SUCH MEMORY DEVICES - Methods for fabricating memory devices having charged species, and methods for adjusting flatband voltages in such memory devices. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material. A flatband voltage of the memory device can be adjusted by moving the charged species to different levels within the dielectric material, thus programming different states into the device. | 04-30-2015 |
20150177470 | METHOD AND APPARATUS PROVIDING A COUPLED PHOTONIC STRUCTURE - Described embodiments include optical connections for electronic-photonic devices, such as optical waveguides and photonic detectors for receiving optical waves from the optical waveguides and directing the optical waves to a common point. Methods of fabricating such connections are also described. | 06-25-2015 |
20150192737 | PHOTONIC DEVICE STRUCTURE AND METHOD OF MANUFACTURE - Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity. | 07-09-2015 |
20150243546 | SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE - A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate. | 08-27-2015 |
20150301283 | METHOD AND APPARATUS PROVIDING COMPENSATION FOR WAVELENGTH DRIFT IN PHOTONIC STRUCTURES - A method and apparatus are described which provide for wavelength drift compensation in a photonic waveguide by application of an electric field to a waveguide having a strained waveguide core. | 10-22-2015 |
20150325645 | METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE - Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material. | 11-12-2015 |
20160054520 | METHOD AND STRUCTURE PROVIDING A FRONT-END-OF-LINE AND A BACK-END-OF-LINE COUPLED WAVEGUIDES - An integrated structure and method of formation provide a lower level waveguide having a core of a first material and a higher level waveguide having a core of a second material and a coupling region for coupling the two waveguides together. The different core materials provided different coupled waveguides having different light loss characteristics. | 02-25-2016 |
20160056309 | METHOD AND OPTOELECTRONIC STRUCTURE PROVIDING POLYSILICON PHOTONIC DEVICES WITH DIFFERENT OPTICAL PROPERTIES IN DIFFERENT REGIONS - Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure. | 02-25-2016 |
20160103283 | ACTIVE ALIGNMENT OF OPTICAL FIBER TO CHIP USING LIQUID CRYSTALS - Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system. | 04-14-2016 |
Patent application number | Description | Published |
20100232220 | ELECTRONIC DEVICES FORMED OF TWO OR MORE SUBSTRATES BONDED TOGETHER, ELECTRONIC SYSTEMS COMPRISING ELECTRONIC DEVICES AND METHODS OF MAKING ELECTRONIC DEVICES - Electronic devices comprise a first substrate and a second substrate. The first substrate comprises circuitry including a plurality of conductive traces at least substantially parallel to each other through at least a portion of the first substrate. A plurality of bond pads are positioned on a surface of the first substrate and comprise a width extending over at least two of the plurality of conductive traces. A plurality of vias extend from adjacent at least some of the conductive traces to the plurality of bond pads. The second substrate is bonded to the first substrate and comprises circuitry coupled to the plurality of bond pads on the first substrate with a plurality of conductive bumps. Memory devices and related methods of forming electronic devices and memory devices are also disclosed, as are electronic systems. | 09-16-2010 |
20100309714 | METHODS, STRUCTURES, AND DEVICES FOR REDUCING OPERATIONAL ENERGY IN PHASE CHANGE MEMORY - Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material. | 12-09-2010 |
20110199814 | Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems - Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line. | 08-18-2011 |
20110199815 | Memcapacitor Devices, Field Effect Transistor Devices, Non-Volatile Memory Arrays, And Methods Of Programming - A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods. | 08-18-2011 |
20110233774 | ELECTRONIC DEVICES FORMED OF TWO OR MORE SUBSTRATES CONNECTED TOGETHER, ELECTRONIC SYSTEMS COMPRISING ELECTRONIC DEVICES, AND METHODS OF FORMING ELECTRONIC DEVICES - Electronic devices comprise a first substrate and a second substrate. The first substrate comprises circuitry including a plurality of conductive traces at least substantially parallel to each other through at least a portion of the first substrate. A plurality of bond pads is positioned on a surface of the first substrate and comprises a width extending over at least two of the plurality of conductive traces. A plurality of vias extends from adjacent at least some of the conductive traces to the plurality of bond pads. The second substrate is bonded to the first substrate and comprises support circuitry coupled to the plurality of bond pads on the first substrate with a plurality of conductive bumps. Memory devices and related methods of forming electronic devices and memory devices are also disclosed, as are electronic systems. | 09-29-2011 |
20120002465 | METHODS, STRUCTURES, AND DEVICES FOR REDUCING OPERATIONAL ENERGY IN PHASE CHANGE MEMORY - Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material. | 01-05-2012 |
20120106232 | Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells - Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer. | 05-03-2012 |
20120108028 | Methods of Forming Electrical Components and Memory Cells - Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components. | 05-03-2012 |
20120300530 | MEMORY CELL OPERATION - Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell. | 11-29-2012 |
20130001723 | Photonic Systems and Methods of Forming Photonic Systems - Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems. | 01-03-2013 |
20130130466 | Methods of Forming Electrical Components and Memory Cells - Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components. | 05-23-2013 |
20130154042 | Photonic Systems and Methods of Forming Photonic Systems - Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems. | 06-20-2013 |
20130208532 | Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems - Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line. | 08-15-2013 |
20130221419 | Memcapacitor Devices, Field Effect Transistor Devices, And Non-Volatile Memory Arrays - A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods. | 08-29-2013 |
20130314973 | Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells - Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer. | 11-28-2013 |
20140029225 | ELECTRONIC DEVICES INCLUDING TWO OR MORE SUBSTRATES ELECTRICALLY CONNECTED TOGETHER AND METHODS OF FORMING SUCH ELECTRONIC DEVICES - Electronic devices may include a first substrate bearing circuitry components at a nanoscale pitch within the first substrate. The first substrate may include microscale bond pads on a surface of the first substrate. A via may electrically connect one of the microscale bond pads to one of the circuitry components. A second substrate may be electrically connected to at least one of the microscale bond pads. Methods of forming electronic devices may include positioning a first substrate adjacent to a second substrate. The first substrate may bear circuitry components at a nanoscale pitch within the first substrate. The first substrate may include microscale bond pads on a surface of the first substrate. A via may electrically connect one of the microscale bond pads to one of the circuitry components. The second substrate may be electrically connected to at least one of the microscale bond pads. | 01-30-2014 |
20140131733 | Photonic Systems and Methods of Forming Photonic Systems - Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems. | 05-15-2014 |
20140192604 | MEMORY CELL OPERATION - Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell. | 07-10-2014 |
20140246671 | Field Effect Transistor Devices - A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods. | 09-04-2014 |
20140332751 | Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells - Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer. | 11-13-2014 |
20140340861 | ELECTRONIC DEVICES INCLUDING TWO OR MORE SUBSTRATES ELECTRICALLY CONNECTED TOGETHER AND METHODS OF FORMING SUCH ELECTRONIC DEVICES - Electronic devices may include a first substrate including circuitry components within the substrate, a microscale bond pad on a surface of the substrate, and a via electrically connecting the microscale bond pad to one of the circuitry components. A distance between centers of at least some adjacent circuitry components of the circuitry components may be a nanoscale distance. A second substrate may be electrically connected to the microscale bond pad. Methods of forming electronic devices may involve positioning a first substrate adjacent to a second substrate and electrically connecting the second substrate to a microscale bond pad on a surface of the first substrate. The first substrate may include circuitry components within the first substrate and a via electrically connecting the microscale bond pad to one of the circuitry components. A distance between centers of at least some adjacent circuitry components of the circuitry components may be a nanoscale distance. | 11-20-2014 |
20150034908 | SEMICONDUCTOR GRAPHENE STRUCTURES, METHODS OF FORMING SUCH STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING SUCH STRUCTURES - A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. | 02-05-2015 |
20150085565 | Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems - Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line. | 03-26-2015 |
20150303372 | MEMORY CELLS, METHODS OF FABRICATION, AND SEMICONDUCTOR DEVICES - A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed. | 10-22-2015 |
20150340372 | POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS - A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr). | 11-26-2015 |
20150380084 | MEMORY DEVICES WITH REDUCED OPERATIONAL ENERGY IN PHASE CHANGE MATERIAL AND METHODS OF OPERATION - Methods of forming and operating phase change memory devices include adjusting an activation energy barrier between a metastable phase and a stable phase of a phase change material in a memory cell. In some embodiments, the activation energy barrier is adjusted by applying stress to the phase change material in the memory cell. Memory devices include a phase change memory cell and a material, structure, or device for applying stress to the phase change material in the memory cell. In some embodiments, a piezoelectric device may be used to apply stress to the phase change material. In additional embodiments, a material having a thermal expansion coefficient greater than that of the phase change material may be positioned to apply stress to the phase change material. | 12-31-2015 |
20160085153 | METHODS OF FORMING PHOTONIC DEVICE STRUCTURES, AND RELATED METHODS OF FORMING ELECTRONIC DEVICES - A method of forming a photonic device structure comprises forming a photoresist over a photonic material over a substrate. The photoresist is exposed to radiation through a gray-tone mask to form at least one photoexposed region and at least one non-photoexposed region of the photoresist. The at least one photoexposed region of the photoresist or the at least one non-photoexposed region of the photoresist is removed to form photoresist features. The photoresist features and unprotected portions of the photonic material are removed to form photonic features. Other methods of forming a photonic device structure, and a method of forming an electronic device are also described. | 03-24-2016 |
Patent application number | Description | Published |
20080311096 | Combinations of Cry1Ab and Cry1Fa as an insect resistance management tool - Compositions for controlling lepidopteran insects use Cry1Fa and Cry1Ab core toxin containing proteins in combination to delay or prevent development of resistance. | 12-18-2008 |
20090221501 | MIXING AND MATCHING TC PROTEINS FOR PEST CONTROL - The subject invention relates to the surprising discovery that toxin complex (TC) proteins, obtainable from | 09-03-2009 |
20090325892 | Synergistic pesticidal mixtures - Synergistic pesticidal mixtures are provided. | 12-31-2009 |
20100004177 | TOXIN COMPLEX PROTEINS AND GENES FROM XENORHABDUS BOVIENII - The subject invention relates to novel | 01-07-2010 |
20100041610 | INSECTICIDAL TOXIN COMPLEX FUSION PROTIENS - The subject invention relates to insecticidal toxin complex (“TC”) fusion proteins and to polynucleotides that encode these fusion proteins. In some embodiments, the invention provides a fusion protein comprising a Class A protein, a Class B protein, and a Class C TC protein fused together to form a single protein. In some other embodiments, the invention provides a fusion protein comprising a Class B and a Class C TC proteins fused together. In the latter embodiments, the BC or CB fusion protein can be used to enhance or potentiate the anti-insect activity of a “Toxin A” or Class A protein. The subject invention also includes plants, cells (bacterial and plant cells for example), and seeds that comprise the polynucleotides. The subject invention also includes methods of controlling pests (preferably insects and other plant pests) with fusion proteins of the subject invention. | 02-18-2010 |
20100269223 | DIG-3 INSECTICIDAL CRY TOXINS - DIG-3 Cry toxins, polynucleotides encoding such toxins, and transgenic plants that produce such toxins are useful to control insect pests. | 10-21-2010 |
20110196001 | METHOD TO CONTROL INSECTS RESISTANT TO COMMON INSECTICIDES - N-Substituted sulfoximines are effective at controlling insects resistant to common insecticides. | 08-11-2011 |
20110200684 | SYNERGISTIC PESTICIDAL MIXTURES - Synergistic pesticidal mixtures are provided. | 08-18-2011 |
20120159674 | Combined Use of Vip3Ab and Cry1Ab for Management of Resistant Insects - The subject invention includes methods and plants for controlling lepidopteran insects, said plants comprising a Vip3Ab insecticidal protein in combination with a Cry1Ab protein to delay or prevent development of resistance by the insect(s)—particularly corn earworm. | 06-21-2012 |
20120311745 | COMBINED USE OF CRY1CA AND CRY1AB PROTEINS FOR INSECT RESISTANCE MANAGEMENT - The subject invention includes methods and plants for controlling lepidopteran insects, said plants comprising Cry1Ca insecticidal protein and a Cry1Ab insecticidal protein in combination to delay or prevent development of resistance by the insects. | 12-06-2012 |
20120311746 | INSECT RESISTANCE MANAGEMENT WITH COMBINATIONS OF CRY1BE AND CRY1F PROTEINS - The subject invention relates in part to stacking Cry1Be toxins along with Cry1Fa toxins to prevent insects from developing resistance towards either toxin by itself. As discussed in more detail herein, the subject pair of proteins is a particularly advantageous combination, as no other pair of proteins is known to provide high levels of control and non-cross-resistant activity against both | 12-06-2012 |
20120317681 | COMBINED USE OF CRY1Ca AND CRY1Fa PROTEINS FOR INSECT RESISTANCE MANAGEMENT - The subject invention includes methods and plants for controlling lepidopteran insects, said plants comprising a Cry1Fa insecticidal protein and a Cry1Ca insecticidal protein, in combination, to delay or prevent development of resistance by the insect(s). | 12-13-2012 |
20120317682 | COMBINED USE OF VIP3AB AND CRY1FA FOR MANAGEMENT OF RESISTANT INSECTS - The subject invention includes methods and plants for controlling lepidopteran insects, said plants comprising a Vip3Ab insecticidal protein in combination with a Cry 1Fa insecticidal protein to delay or prevent development of resistance by the insect(s). | 12-13-2012 |
20120324605 | INSECTCIDAL PROTEIN COMBINATIONS FOR CONTROLLING FALL ARMYWORM AND EUROPEAN CORN BORER, AND METHODS FOR INSECT RESISTANCE MANAGEMENT - The subject invention relates in part to stacking certain Cry genes along with Cry 1Fa to result in products that are more durable and less prone towards insects developing resistance towards the activity of any of the toxins (such as Cry 1Fa) by itself. Embodiments of the Cry 1F stacking partners include Cry2Aa, Cry 1I, and Cry 1E. These stacks can be used to control FAW and/or ECB as described herein. | 12-20-2012 |
20120324606 | USE OF CRY 1AB IN COMBINATION WITH CRY1BE FOR MANAGEMENT OF RESISTANT INSECTS - The subject invention includes methods and plants for controlling European corn borer and/or fall armyworm insects, said plants comprising a Cry1Ab insecticidal protein and a Cry1Be insecticidal protein, and various combinations of other proteins comprising this pair of proteins, to delay or prevent development of resistance by the insects. | 12-20-2012 |
20120331589 | COMBINED USE OF CRY1Da AND CRY1Fa PROTEINS FOR INSECT RESISTANCE MANAGEMENT - The subject invention includes methods and plants for controlling lepidopteran insects, said plants comprising Cry1Fa and Cry1Da core toxin containing proteins in combination to delay or prevent development of resistance by the insect(s). | 12-27-2012 |
20120331590 | USE OF CRY1DA IN COMBINATION WITH CRY1BE FOR MANAGEMENT OF RESISTANT INSECTS - The subject invention includes methods and plants for controlling fall army worm insects, said plants comprising a Cry1Da insecticidal protein and a Cry1Be insecticidal protein, and various combinations of other proteins comprising this pair of proteins, to delay or prevent development of resistance by the insects. | 12-27-2012 |
20130007923 | USE OF Cry1Da IN COMBINATION WITH Cry1Ca FOR MANAGEMENT OF RESISTANT INSECTS - The subject invention includes methods and plants for controlling fall armyworm lepidopteran insects, said plants comprising a Cry1Da insecticidal protein and a Cry1Ca insecticidal protein, and various combinations of other proteins comprising this pair of proteins, to delay or prevent development of resistance by the insects. | 01-03-2013 |
20130007924 | INSECTCIDAL PROTEIN COMBINATIONS COMPRISING Cry1AB AND CRY2AA FOR CONTROLLING EUROPEAN CORN BORER, AND METHODS FOR INSECT RESISTANCE MANAGEMENT - The subject invention relates in part to stacking a Cry IAb protein and a Cry2Aa protein to make plants (particularly corn or maize) more durable and less prone to allowing insects to develop that are resistant to the activity of either of these two toxins. These stacks can be used to specifically target European cornborer. | 01-03-2013 |
20130025006 | MODIFIED Cry1Ca INSECTICIAL Cry PROTEINS - The present invention includes modified, insecticidal B.t. Cry1Ca proteins, including the proteins designated herein as DIG-109 and DIG-152, as well as variants of DIG-109 and DIG-152, nucleic acids encoding these proteins, methods of controlling pests using the proteins, methods of producing the proteins in transgenic host cells, and transgenic plants that produce the proteins. The DIG-109 and DIG-152 proteins comprise chimeric peptides composed of a core toxin segment of B.t. Cry1Ca and a Cry1Ab protoxin segment. Insecticidally active variants of the DIG-109 and DIG-152 proteins are also described. | 01-24-2013 |
20130036520 | USE OF DIG3 INSECTICIDAL CRYSTAL PROTEIN IN COMBINATION WITH Cry1Ab FOR MANAGEMENT OF RESISTANCE IN EUROPEAN CORNBORER - The subject invention includes methods and plants for controlling European corn borer, said plants comprising a Cry1Ab insecticidal protein and a DIG-3 insecticidal protein to delay or prevent development of resistance by the insect. | 02-07-2013 |
20130042374 | COMBINED USE OF Cry1Fa AND Cry1Ab PROTEINS FOR CONTROL OF 1Ab-RESISTANT SUGARCANE BORER AND FOR INSECT RESISTANCE MANAGEMENT IN SUGARCANE - The subject invention includes methods and sugarcane plants for controlling sugarcane borer (SCB) insects, said sugarcane plants comprising Cry1Fa and Cry1Ab core toxin containing proteins in combination to delay or prevent development of resistance by the SCB. | 02-14-2013 |
20130102642 | SYNERGISTIC PESTICIDAL MIXTURES - Synergistic pesticidal mixtures are provided. | 04-25-2013 |
20130123307 | METHOD TO CONTROL INSECTS RESISTANT TO COMMON INSECTICIDES - N-Substituted sulfoximines are effective at controlling insects resistant to common insecticides. | 05-16-2013 |
20130167268 | COMBINATIONS INCLUDING CRY34AB/35AB AND CRY3Aa PROTEINS TO PREVENT DEVELOPMENT OF RESISTANCE IN CORN ROOTWORMS (DIABROTICA SPP.) - The subject invention relates in part to Cry34Ab/35Ab in combination with Cry3Aa. The subject invention relates in part to the surprising discovery that combinations of Cry34Ab/Cry35Ab and Cry3Aa are useful for preventing development of resistance (to either insecticidal protein system alone) by a corn rootworm ( | 06-27-2013 |
20130167269 | COMBINATIONS INCLUDING Cry34Ab/35Ab AND Cry6Aa PROTEINS TO PREVENT DEVELOPMENT OF RESISTANCE IN CORN ROOTWORMS (DIABROTICA SPP.) - The subject invention relates in part to Cry34Ab/35Ab in combination with Cry6Aa. The subject invention relates in part to the surprising discovery that combinations of Cry34Ab/Cry35Ab and Cry6Aa are useful for preventing development of resistance (to either insecticidal protein system alone) by a corn rootworm ( | 06-27-2013 |
20130180016 | COMBINATIONS INCLUDING CRY34AB/35AB AND CRY3BA PROTEINS TO PREVENT DEVELOPMENT OF RESISTANCE IN CORN ROOTWORMS (DIABROTICA SPP.) - The subject invention relates in part to Cry34Ab/35Ab in combination with Cry3Ba. The subject invention relates in part to the surprising discovery that Cry34Ab/Cry35Ab and Cry3Ba are useful for preventing development of resistance (to either insecticidal protein system alone) by a corn rootworm ( | 07-11-2013 |
20130203657 | USE OF VIPAB IN COMBINATION WITH CRY1CA FOR MANAGEMENT OF RESISTANT INSECTS - The subject invention includes methods and plants for controlling fall army worm lepidopteran insects, said plants comprising a V1p3Ab insecticidal protein and a Cry1Ca insecticidal protein, and various combinations of other proteins comprising this pair of proteins, to delay or prevent development of resistance by the insects. | 08-08-2013 |
20130219570 | DIG-3 INSECTICIDAL Cry TOXINS - DIG-3 Cry toxins, polynucleotides encoding such toxins, and transgenic plants that produce such toxins are useful to control insect pests. | 08-22-2013 |
20130263331 | COMBINATIONS INCLUDING CRY3AA AND CRY6AA PROTEINS TO PREVENT DEVELOPMENT OF RESISTANCE IN CORN ROOTWORMS (DIABROTICA SPP.) - The subject invention relates in part to Cry3Aa in combination with Cry6Aa. The subject invention relates in part to the surprising discovery that combinations of Cry3Aa and Cry6Aa are useful for preventing development of resistance (to either insecticidal protein system alone) by a corn rootworm ( | 10-03-2013 |
20140182018 | Combinations of Cry1Ab and Cry1Fa as an insect resistance management tool - Compositions for controlling lepidopteran insects use Cry1Fa and Cry1Ab core toxin containing proteins in combination to delay or prevent development of resistance. | 06-26-2014 |
20150264940 | CRY1D FOR CONTROLLING CORN EARWORM - The subject invention relates in part to the surprising discovery that Cry1Da is active against corn earworm (CEW), | 09-24-2015 |
20150267213 | STRAINS OF AGROBACTERIUM MODIFIED TO INCREASE PLANT TRANSFORMATION FREQUENCY - strains that harbor transformation-enhancing genes on a plasmid capable of replication independently of the | 09-24-2015 |