Patent application number | Description | Published |
20090127081 | MEMS SWITCH - An object is that contact between an upper switch electrode and a lower switch electrode is not hindered. The present invention relates to a MEMS switch including a substrate; a structural layer with a beam structure in which at least one end is fixed to the substrate; a lower drive electrode layer and a lower switch electrode layer which are provided below the structural layer and on a surface of the substrate; and an upper drive electrode layer and an upper switch electrode layer which are provided on a surface of the structural layer, which is opposite to the substrate, so as to face the lower drive electrode layer and the lower switch electrode layer, respectively, in which the upper switch electrode layer is larger than the lower switch electrode layer. | 05-21-2009 |
20090145629 | Micromachine and Method for Manufacturing the Same - A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented. | 06-11-2009 |
20090212296 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion. | 08-27-2009 |
20100187535 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE - To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized. | 07-29-2010 |
20100273319 | Method for Manufacturing Semiconductor Device - A method for manufacturing a semiconductor device includes: forming a first and second layers not firmly adhering to each other over a substrate; forming a first semiconductor element layer and a first insulating layer over the second layer; forming a hole reaching the first layer in the first insulating layer; oxidizing the first layer exposed at a bottom of the hole; forming a wiring electrically connected to the first semiconductor element layer over the first insulating layer and in the hole; and separating the first layer and the substrate from the second layer and the first semiconductor element layer and expose the wiring. Further, another method includes providing an anisotropic conductive adhesive between a second semiconductor element layer separated through a manufacturing process similar to the above and the wiring, whereby the first and second semiconductor element layers are electrically connected through the anisotropic conductive adhesive and the wiring. | 10-28-2010 |
20110133177 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 06-09-2011 |
20110180796 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which maintains favorable characteristics and achieves miniaturization. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, in which the source electrode and the drain electrode each include a first conductive layer, and a second conductive layer having a region which extends in a channel length direction from an end portion of the first conductive layer. | 07-28-2011 |
20110193080 | Semiconductor device and electronic appliance - One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region. | 08-11-2011 |
20110249228 | SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device in which a liquid crystal layer exhibiting a blue phase is sandwiched between a first substrate and a second substrate, a pixel electrode layer is electrically connected to a drain electrode layer of a transistor and a common electrode layer is electrically connected to a conductive layer formed through the same steps as the drain electrode layer. The pixel electrode layer and the common electrode layer are over an interlayer film and spaced apart from each other. An opening formed in the interlayer film is filled with liquid crystal, and the liquid crystal layer is formed. | 10-13-2011 |
20110281389 | Micromachine and Method for Manufacturing the Same - A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented. | 11-17-2011 |
20120003539 | METHOD FOR MANUFACTURING ULTRA SMALL PARTICLE, POSITIVE ELECTRODE ACTIVE MATERIAL OF SECOND BATTERY USING THE METHOD FOR MANUFACTURING ULTRA SMALL PARTICLE AND METHOD FOR MANUFACTURING THE SAME, AND SECONDARY BATTERY USING THE POSITIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME - An object is to form a positive electrode active material having small and highly uniform particles by a simple process. A template is formed by forming holes in the template by a nanoimprinting method, and the template is filled with a gel-like LiFePO | 01-05-2012 |
20120007087 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion. | 01-12-2012 |
20120015245 | MANUFACTURING METHOD OF ELECTRODE OF POWER STORAGE DEVICE, ELECTRODE OF POWER STORAGE DEVICE, AND POWER STORAGE DEVICE - A shiny is manufactured using a low-molecular-weight organic acid as a dispersant and a nonaqueous organic solvent as a solvent, whereby a coated electrode for a power storage device in which an active material which has been made into microparticles each having a particle diameter of 100 nm or less is uniformly dispersed can be manufactured. By the use of the coated electrode manufactured in this manner, a power storage device with high charge/discharge characteristics can be manufactured. In other words, a power storage device with high capacity density can be realized because the amount of impurities is small and the power density is high due to the sufficient dispersion of the active material in the active material layer. | 01-19-2012 |
20120177842 | METHOD FOR MANUFACTURING POWER STORAGE DEVICE - The power extraction efficiency of a nonaqueous electrolyte secondary battery such as a lithium ion battery is improved. A material having magnetic susceptibility anisotropy such as an olivine type oxide including a transition metal element is used for active material particles. The active material particles and an electrolyte solution are mixed to form a slurry. The slurry is applied to a current collector, and then the current collector is left in a magnetic field. Thus, the active material particles are oriented. With the use of active material particles oriented in such a manner, the power extraction efficiency can be improved. | 07-12-2012 |
20130224581 | NEGATIVE ELECTRODE OF POWER STORAGE DEVICE AND POWER STORAGE DEVICE - A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO | 08-29-2013 |
20140027767 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 01-30-2014 |
20140367678 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 12-18-2014 |
20150014605 | LITHIUM-MANGANESE COMPOSITE OXIDE, SECONDARY BATTERY, AND ELECTRIC DEVICE - The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by Li | 01-15-2015 |