Patent application number | Description | Published |
20080203407 | Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip - A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified. | 08-28-2008 |
20090090900 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 04-09-2009 |
20090309113 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate. | 12-17-2009 |
20100181583 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip is specified, comprising a semiconductor body ( | 07-22-2010 |
20100207100 | Radiation-Emitting Semiconductor Body - A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body. | 08-19-2010 |
20100208763 | Semiconductor Chip and Method for Manufacturing a Semiconductor Chip - A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body. | 08-19-2010 |
20100230698 | Optoelectronic Semiconductor Body - An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate. | 09-16-2010 |
20100283073 | Thin-Film LED Having a Mirror Layer and Method for the Production Thereof - A thin-film LED comprising a barrier layer ( | 11-11-2010 |
20100296538 | Optoelectronic Component - An optoelectronic component ( | 11-25-2010 |
20110012088 | OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY - An optoelectronic semiconductor body includes an epitaxial semiconductor layer sequence including a tunnel junction including an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation. | 01-20-2011 |
20110049555 | Optoelectronic Semiconductor Chip and Method for Producing Same - An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places. | 03-03-2011 |
20110114988 | Led Chip - A light-emitting diode chip ( | 05-19-2011 |
20110156069 | Optoelectronic Semiconductor Chip and Method for the Production Thereof - A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified. | 06-30-2011 |
20110193057 | LED Having Current Spreading Layer - An LED having a radiation-emitting active layer ( | 08-11-2011 |
20110198640 | Semiconductor Light-Emitting Diode and Method for Producing a Semiconductor Light-Emitting Diode - A semiconductor light-emitting diode ( | 08-18-2011 |
20110215369 | LUMINESCENCE DIODE CHIP - A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence. | 09-08-2011 |
20110284893 | Optoelectronic Semiconductor Chip - A description is given of an optoelectronic semiconductor chip ( | 11-24-2011 |
20110284918 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V. | 11-24-2011 |
20120032306 | Method for Patterning a Semiconductor Surface, and Semiconductor Chip - A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer. | 02-09-2012 |
20120043572 | Optoelectronic Semiconductor Body - An optoelectronic semiconductor body with a semiconductor layer sequence ( | 02-23-2012 |
20120133908 | Optical Projection Apparatus - An optical projection apparatus includes a first light source, a second light source, and an imaging element, which is illuminated by the first light source and the second light source during operation. The light source includes a light-emitting diode chip that emits red light during operation. The second light source includes a first light-emitting diode chip, which emits green light during operation. A second light-emitting diode chip emits blue light during operation. The second light-emitting diode chip is arranged on the first light-emitting diode chip at a radiation exit surface of the first light-emitting diode chip. Electromagnetic radiation generated in the first light-emitting diode chip during operation passes through the second light-emitting diode chip. | 05-31-2012 |
20120146044 | Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip - In at least one embodiment of the optoelectronic semiconductor chip ( | 06-14-2012 |
20120161103 | ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP - An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm. | 06-28-2012 |
20120256161 | Light Diode - A light-emitting diode is specified, comprising a first semiconductor body ( | 10-11-2012 |
20120273824 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer and a light-outcoupling layer applied at least indirectly on a radiation permeable surface of the semiconductor layer sequence. A material of the light-outcoupling layer is different from a material of the semiconductor layer sequence and refractive indices of the materials of the light-outcoupling layer and of the semiconductor layer sequence differ from each other by 20% at most. Recesses in the light-outcoupling layer form facets, wherein the recesses do not penetrate the light-outcoupling layer completely. The facets have a total area of at least 25% of an area of the radiation permeable surface. | 11-01-2012 |
20120280207 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 11-08-2012 |
20120299049 | Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected. | 11-29-2012 |
20130028281 | Optoelectronic Semiconductor Chip - In at least one embodiment of the optoelectronic semiconductor chip ( | 01-31-2013 |
20130039617 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component ( | 02-14-2013 |
20130043496 | LIGHTING DEVICE - A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more. | 02-21-2013 |
20130221392 | Optoelectronic Semiconductor Body and Method for Producing the Same - An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified. | 08-29-2013 |
20130328066 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring. | 12-12-2013 |
20140070246 | LIGHT-EMITTING SEMICONDUCTOR COMPONENT - The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body ( | 03-13-2014 |
20140145227 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier. | 05-29-2014 |
20140286369 | OPTOELECTRONIC COMPONENT - An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of In | 09-25-2014 |
20150048400 | METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer. | 02-19-2015 |
20150063395 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: | 03-05-2015 |