Patent application number | Description | Published |
20080203407 | Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip - A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified. | 08-28-2008 |
20090090900 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 04-09-2009 |
20100181583 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip is specified, comprising a semiconductor body ( | 07-22-2010 |
20100207098 | Light-Emitting Structure - A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type, are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type. | 08-19-2010 |
20100207100 | Radiation-Emitting Semiconductor Body - A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body. | 08-19-2010 |
20110018106 | METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTRATES, AND DEVICES BASED THEREON - An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed. | 01-27-2011 |
20110019411 | Optoelectronic Module and Projection Apparatus Comprising the Optoelectronic Module - An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus. | 01-27-2011 |
20110042643 | Optoelectronic Semiconductor Chip Having a Multiple Quantum Well Structure - An optoelectronic semiconductor chip is specified, which has an active zone ( | 02-24-2011 |
20110156069 | Optoelectronic Semiconductor Chip and Method for the Production Thereof - A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified. | 06-30-2011 |
20110193057 | LED Having Current Spreading Layer - An LED having a radiation-emitting active layer ( | 08-11-2011 |
20110248295 | Lamp - In at least one embodiment of the luminous means ( | 10-13-2011 |
20110316028 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component comprising a semiconductor layer sequence ( | 12-29-2011 |
20120280207 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 11-08-2012 |