Patent application number | Description | Published |
20080198315 | Liquid crystal display device and method of fabricating the same - A liquid crystal display device including a first substrate, a second substrate facing and spaced away from the first substrate, a liquid crystal layer sandwiched between the first and second substrates, a switching device formed on the first substrate, a first electrically insulating film randomly patterned on the first substrate, a second electrically insulating film covering the first electrically insulating film therewith, and having a wavy surface, and a reflection electrode formed on the second electrically insulating film, and electrically connected to an electrode of the switching device, wherein a light passing through the second substrate and the liquid crystal layer is reflected at the reflection electrode, and the second electrically insulating film extends outwardly from the first electrically insulating film by a certain length at an end of a display region in which images are to be displayed, such that a step formed by the first and second electrically insulating films in the vicinity of the end of the display region is smoothed. | 08-21-2008 |
20080286890 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A liquid crystal display device including a first substrate, a second substrate facing and spaced away from the first substrate, a liquid crystal layer sandwiched between the first and second substrates, a switching device formed on the first substrate, a first electrically insulating film randomly patterned on the first substrate, a second electrically insulating film covering the first electrically insulating film therewith, and having a wavy surface, and a reflection electrode formed on the second electrically insulating film, and electrically connected to an electrode of the switching device, wherein a light passing through the second substrate and the liquid crystal layer is reflected at the reflection electrode, and the second electrically insulating film extends outwardly from the first electrically insulating film by a certain length at an end of a display region in which images are to be displayed, such that a step formed by the first and second electrically insulating films in the vicinity of the end of the display region is smoothed. | 11-20-2008 |
20090079918 | Liquid crystal display device and method of fabricating the same - A liquid crystal display device including a first substrate, a second substrate facing and spaced away from the first substrate, a liquid crystal layer sandwiched between the first and second substrates, a switching device formed on the first substrate, a first electrically insulating film randomly patterned on the first substrate, a second electrically insulating film covering the first electrically insulating film therewith, and having a wavy surface, and a reflection electrode formed on the second electrically insulating film, and electrically connected to an electrode of the switching device, wherein a light passing through the second substrate and the liquid crystal layer is reflected at the reflection electrode, and the second electrically insulating film extends outwardly from the first electrically insulating film by a certain length at an end of a display region in which images are to be displayed, such that a step formed by the first and second electrically insulating films in the vicinity of the end of the display region is smoothed. | 03-26-2009 |
20110285946 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device including a first substrate, a second substrate facing and spaced away from the first substrate, a liquid crystal layer sandwiched between the first and second substrates, a switching device formed on the first substrate, a first electrically insulating film randomly patterned on the first substrate, a second electrically insulating film covering the first electrically insulating film therewith, and having a wavy surface, and a reflection electrode formed on the second electrically insulating film, and electrically connected to an electrode of the switching device, wherein a light passing through the second substrate and the liquid crystal layer is reflected at the reflection electrode, and the second electrically insulating film extends outwardly from the first electrically insulating film by a certain length at an end of a display region in which images are to be displayed, such that a step formed by the first and second electrically insulating films in the vicinity of the end of the display region is smoothed. | 11-24-2011 |
Patent application number | Description | Published |
20090176780 | NITROGENOUS HETEROCYCLIC COMPOUNDS - The present invention relates to nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which have inhibitory activity on the phosphorylation of kinases, which inhibits the activity of such kinases. The invention is also related to a method of inhibiting kinases and treating disease states in a mammal by inhibiting the phosphorylation of kinases. In a particular aspect the present invention provides nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which inhibit phosphorylation of a PDGF receptor to hinder abnormal cell growth and cell wandering, and a method for preventing or treating cell-proliferative diseases such as arteriosclerosis, vascular reobstruction, cancer and glomerulosclerosis. | 07-09-2009 |
20100113468 | QUINAZOLINE DERIVATIVES AS KINASE INHIBITORS - The present invention relates to nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which have inhibitory activity on the phosphorylation of kinases, which inhibits the activity of such kinases. The invention is also related to a method of inhibiting kinases and treating disease states in a mammal by inhibiting the phosphorylation of kinases. In a particular aspect the present invention provides nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which inhibit phosphorylation of a PDGF receptor to hinder abnormal cell growth and cell wandering, and a method for preventing or treating cell-proliferative diseases such as arteriosclerosis, vascular reobstruction, cancer and glomerulosclerosis. | 05-06-2010 |
20130274252 | QUINAZOLINE DERIVATIVES AS KINASE INHIBITORS - The Present invention relates to nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which have inhibitory activity on the phosphorylation of kinases, which inhibits the activity of such kinases. The invention is also related to a method of inhibiting kinases and treating disease states in a mammal by inhibiting the phosphorylation of kinases. In a particular aspect the present invention provides nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which inhibit phosphorylation of a PDGF receptor to hinder abnormal cell growth and cell wandering, and a method for preventing or treating cell-proliferative diseases such as arteriosclerosis, vascular reobstruction, cancer and glomerulosclerosis. | 10-17-2013 |
20150133439 | QUINAZOLINE DERIVATIVES AS KINASE INHIBITORS - The Present invention relates to nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which have inhibitory activity on the phosphorylation of kinases, which inhibits the activity of such kinases. The invention is also related to a method of inhibiting kinases and treating disease states in a mammal by inhibiting the phosphorylation of kinases. In a particular aspect the present invention provides nitrogen-containing heterocyclic compounds and pharmaceutically acceptable salts thereof which inhibit phosphorylation of a PDGF receptor to hinder abnormal cell growth and cell wandering, and a method for preventing or treating cell-proliferative diseases such as arteriosclerosis, vascular reobstruction, cancer and glomerulosclerosis. | 05-14-2015 |
Patent application number | Description | Published |
20100249501 | ENDOSCOPE APPARATUS - The endoscope apparatus comprises an endoscope which has an imaging element and a monitor which displays an image imaged by the imaging element. The endoscope is provided with an internal insertion portion which is movably arrangeable inside a body cavity, and an operation unit for changing the position of the internal insertion portion, which is arrangeable outside the body. The internal insertion portion and the operation unit are arranged on a common axis so as to interpose a body wall therebetween. | 09-30-2010 |
20130184528 | ENDOSCOPE, AND TREATMENT INSTRUMENT FOR ENDOSCOPE - A medical instrument system includes an elongated member having an inner space in a direction of a longitudinal axis, an insertion section installed at the inner space and having a bending section capable of being bent, a manipulation section configured to manipulate the bending section, a first manipulation member transmitting a driving force of the bending section in accordance with the manipulation by the manipulation section, a second manipulation member arranged in the direction of a longitudinal axis, a connecting section having a first connecting section and a second connecting section and capable of connecting the first manipulation member and the second manipulation member, and a switching mechanism having a first acting section and a second acting section and switching between a connection state and a release state in accordance with a relative movement between the elongated member and the insertion section. | 07-18-2013 |
20140296632 | ENDOSCOPE, AND TREATMENT INSTRUMENT FOR ENDOSCOPE - A medical instrument system includes an elongated member having an inner space in a direction of a longitudinal axis, an insertion section installed at the inner space and having a bending section capable of being bent, a manipulation section configured to manipulate the bending section, a first manipulation member transmitting a driving force of the bending section in accordance with the manipulation by the manipulation section, a second manipulation member arranged in the direction of a longitudinal axis, a connecting section having a first connecting section and a second connecting section and capable of connecting the first manipulation member and the second manipulation member, and a switching mechanism having a first acting section and a second acting section and switching between a connection state and a release state in accordance with a relative movement between the elongated member and the insertion section. | 10-02-2014 |
Patent application number | Description | Published |
20090212026 | WIRE ELECTRIC DISCHARGE MACHINING METHOD, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SOLAR BATTERY CELL MANUFACTURING METHOD - Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 Ω·cm and equal to or lower than 5 Ω·cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 μsec and equal to or lower than 4 μsec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined. | 08-27-2009 |
20100120188 | METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE - Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film. | 05-13-2010 |
20120015470 | METHOD FOR ROUGHENING SUBSTRATE SURFACE AND METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE - A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film. | 01-19-2012 |
20120037224 | SOLAR BATTERY CELL AND METHOD OF MANUFACTURING THE SAME - A solar battery cell including: a semiconductor substrate; front-surface asperities formed on the principal surface on a light-receiving side of the semiconductor substrate; a semiconductor layer having a conductive type and formed along the front-surface asperities; and an anti-reflection film formed on the light-receiving side of the semiconductor layer, a passivation film is formed on the principal surface on the back-surface side of the semiconductor substrate, and at least one opening is provided in the passivation film. A first back-surface electrode is formed on the passivation film so as to overlap the entire area occupied by the opening and to cover the opening, and a second back-surface electrode is formed on the passivation film so as to overlap the entire area occupied by the first back-surface electrode and to cover the first back-surface electrode. | 02-16-2012 |
20120097239 | METHOD FOR ROUGHENING SUBSTRATE SURFACE, METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC DEVICE - To include a first step of forming a protection film on a surface of a translucent substrate, a second step of exposing the surface of the translucent substrate by forming a plurality of openings arranged regularly at a certain pitch in the protection film, a third step of forming parabolic irregularities including substantially hemispherical depressions arranged substantially uniformly on the surface of the translucent substrate by performing isotropic etching by using the protection film having the openings formed as a mask and under conditions in which the protection film has resistance to the surface of the translucent substrate on which the protection film is formed, and a fourth step of removing the protection film, wherein at the fourth step, the isotropic etching is continued after formation of the parabolic irregularities to separate the protection film from the translucent substrate and round apexes of protruded portions in the parabolic irregularities. | 04-26-2012 |
20130206210 | SOLAR BATTERY MODULE, PHOTOVOLTAIC APPARATUS, AND MANUFACTURING METHOD OF SOLAR BATTERY MODULE - A solar battery module includes a device array, a substrate, a first sealing portion, a rear-surface protective member, a second sealing portion, and a light scattering portion. The light scattering portion has wavelength selectivity such that an optical reflectivity is not more than 15% over a wavelength region of 500 nanometers to 600 nanometers inclusive, and an optical reflectivity becomes larger than 15% in a wavelength region overlapping on an absorption wavelength range of the photovoltaic device in one of wavelength regions of not more than 350 nanometers and equal to or larger than 700 nanometers, and total integrated scattering of the light scattering portion becomes equal to or larger than 50% in the wavelength region overlapping on the absorption wavelength range of the photovoltaic device in one of the wavelength regions of not more than 350 nanometers and equal to or larger than 700 nanometers. | 08-15-2013 |
Patent application number | Description | Published |
20100248038 | NONAQUEOUS ELECTROLYTE BATTERY - A nonaqueous electrolyte battery includes a positive electrode, a negative electrode and a nonaqueous electrolyte. The positive electrode includes a lithium/manganese-containing oxide represented by Li | 09-30-2010 |
20120183849 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - According to one embodiment, a non-aqueous electrolyte secondary battery includes a positive electrode, a negative electrode spaced apart from the positive electrode, and a non-aqueous electrolytic solution. The negative electrode includes a collector, and a negative electrode layer formed on one or both surfaces of the collector and containing an active material having a potential of 0.5 V or more and 2 V or less based on metallic lithium at the insertion and the desorption of lithium. Metallic iron is formed on the surface of the negative electrode layer in an amount of 10 to 80% per unit area. | 07-19-2012 |
20130302686 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A positive electrode material for non-aqueous electrolyte secondary batteries having high rate characteristics and high energy density, and a battery using the same are provided. The non-aqueous electrolyte secondary battery includes a positive electrode containing a positive electrode material, a conductive agent and a binder; a negative electrode; a separator; and a non-aqueous electrolyte, in which the positive electrode material contains core particles and a coating material that covers from 10% to 90% of the surfaces of the core particles, the core particles are formed of a compound represented by Li | 11-14-2013 |
20130316242 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND PRODUCTION METHOD THEREOF - According to one embodiment, a non-aqueous electrolyte secondary battery is provided. A negative electrode layer in the battery includes a lithium titanium oxide, and has first region(s) and a second region on a surface. The first region(s) is/are surrounded by the second region and have a lower lithium concentration. The second region has a higher lithium concentration. The negative electrode layer satisfies the formula (I): T | 11-28-2013 |
20130330627 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - According to one embodiment, there is provided a non-aqueous electrolyte secondary battery including a positive electrode including a positive electrode active material layer, a negative electrode including a negative electrode active material layer, and a non-aqueous electrolyte. At least one of the positive electrode active material layer and the negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.1 ml to 10 ml per 1 g when heated at 350° C. for 1 minute. | 12-12-2013 |
20130330629 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND PRODUCTION METHOD THEREOF - According to one embodiment, there is provided a non-aqueous electrolyte secondary battery including a positive electrode, a negative electrode including a negative electrode active material layer, and a non-aqueous electrolyte. The negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.1 ml to 5 ml per 1 g when heated at 200° C. for 1 minute. | 12-12-2013 |
20140106225 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A non-aqueous electrolyte secondary battery includes a positive electrode containing active material particles composed of a core section formed of olivine type LiFePO | 04-17-2014 |
20140131902 | GAS SEPARATION APPARATUS AND PACKING - Provided is a gas separation apparatus advantageous in suppression of increase in pressure loss and achievement of reduced size and weight, thereby reducing costs. The gas separation apparatus causes an absorbent to flow down along the surface of a packing arranged in a treatment chamber, and supplies to the treatment chamber a gas to be treated which contains a target gas component, and then causes the gas to be treated and the absorbent flowing down along the surface of the packing to come into gas-liquid contact. Thus the target gas component contained in the gas to be treated is absorbed into the absorbent and separated or recovered from the gas to be treated. The packing has at least one packing unit configured by a plurality of expanded metal plates standing vertically and being aligned. | 05-15-2014 |
20140134477 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery according to an embodiment includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The negative electrode contains a negative electrode active material. A lithium insertion-extraction reaction potential of a negative electrode active material is higher than the oxidation-reduction potential of lithium by a value of 1 V or more. The nonaqueous electrolyte contains an electrolytic salt, a nonaqueous solvent, at least one hydroxyalkylsulfonic acid, and at least one sulfonate. | 05-15-2014 |
20140141323 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - According to one embodiment, there is provided an electrode. The nonaqueous electrolyte secondary battery includes a positive electrode, a negative electrode, a separator provided between the positive electrode and the negative electrode, and a nonaqueous electrolyte. The negative electrode contains as an active material a titanium composite oxide. A lithium absorption/release reaction potential of the titanium composite oxide is higher than 0.5 V vs. Li/Li | 05-22-2014 |
20140162117 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND PRODUCTION METHOD THEREOF - According to the embodiment, there is provided a nonaqueous electrolyte secondary battery comprising a positive electrode; a negative electrode including a negative electrode active material layer; and a nonaqueous electrolyte. The negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.01 ml to 3 ml per 1 g when heated at 400° C. for 1 minute. The nonaqueous electrolyte contains carbon dioxide of 50 ml/L to 1000 ml/L. | 06-12-2014 |
20150086811 | BATTERY MODULE, BATTERY PACK AND VEHICLE - According to one embodiment, a battery module including two nonaqueous electrolyte batteries electrically connected in series is provided. Each of the nonaqueous electrolyte batteries includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The positive electrode contains an iron-containing phosphorus compound represented by Li | 03-26-2015 |
20150086852 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes an exterior member; a positive electrode housed in the exterior member, a negative electrode containing an active material and housed in the exterior member so as to be spatially separated from the positive electrode via a separator, and a nonaqueous electrolyte filled in the exterior member. The negative electrode includes a negative electrode current collector and a negative electrode active material layer on the negative electrode current collector. A tensile strength of the negative electrode is 400 N/mm | 03-26-2015 |
20150086853 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes an exterior member, a cathode including a cathode active material layer housed in the exterior member, an anode including an anode active material layer housed in the exterior member and spatially separated from the cathode by a separator, and a nonaqueous electrolyte filled in the exterior member. The cathode active material layer contains lithium-copper oxide and copper oxide. A peak intensity ratio d(002)/d(010) between a plane index d(010) derived from the lithium-copper oxide and a plane index d(002) derived from the copper oxide is not lower than 0.1 and not higher than 0.5 at an X-ray diffraction peak. | 03-26-2015 |
20150086854 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes an electrode group including a cathode collector, a cathode having a cathode active material layer formed on the cathode collector, an anode collector, an anode having an anode active material layer formed on the anode collector, and a separator placed between the cathode and the anode, an exterior member housing the electrode group, and a nonaqueous electrolyte filled in the exterior member. In the nonaqueous electrolyte secondary battery, the anode collector is at least one metal selected from among Fe, Ti, Ni, Cr, and Al, or an alloy containing at least one metal selected from among Fe, Ti, Ni, Cr, and Al. In the nonaqueous electrolyte secondary battery, a coating containing at least one metal selected from Au and Cu is formed on at least one of the surfaces of the anode collector excluding the anode active material layer. | 03-26-2015 |
20150086862 | NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY PACK - A nonaqueous electrolyte secondary battery of an embodiment includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The electrolyte contains an organic solvent with a lithium salt dissolved therein and an additive. An active material of the negative electrode contains at least one metal selected from Si and Sn, at least one or more selected from an oxide of the metal and an alloy containing the metal, and a carbonaceous matter. A fluorine concentration of a film A formed on the metal, the oxide of the metal, or the alloy containing the metal in the negative electrode active material is higher than a fluorine concentration of a film B formed on the carbonaceous matter, the additive includes at least one compound containing fluorine and at least one compound containing no fluorine, or an electrolyte after initial charge contains at least one fluorine-containing additive. | 03-26-2015 |
20150137393 | GAS SEPARATION DEVICE AND PACKING - The gas separation device separates or captures a target gas component from a gas to be processed by: causing an absorbing liquid to flow down on a surface of a packing disposed inside a processing tank while supplying the gas to be processed containing the target gas component into the processing tank; bringing the absorbing liquid flowing down on the surface of the packing and the gas to be processed into gas-liquid contact; and thereby causing the absorbing liquid to absorb the target gas component contained in the gas to be processed. The packing includes at least one packing unit formed from multiple expanded metal plates, which are disposed vertically and arranged in parallel. Each expanded metal plate includes strands forming the openings which are arranged like stairs. Each strand is inclined to the vertical direction at an angle in a range from 48° to 73°. | 05-21-2015 |
20150303510 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - According to one embodiment, there is provided a non-aqueous electrolyte secondary battery including a positive electrode including a positive electrode active material layer, a negative electrode including a negative electrode active material layer, and a non-aqueous electrolyte. At least one of the positive electrode active material layer and the negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.1 ml to 10 ml per 1 g when heated at 350° C. for 1 minute. | 10-22-2015 |
Patent application number | Description | Published |
20080287431 | Heterocyclic Compound and Anti-Malignant-Tumor Agent Containing the Same as Active Ingredient - Heterocyclic compounds represented by the formula I and anti-malignant-tumor agents containing the heterocyclic compounds as effective components: | 11-20-2008 |
20090221554 | METHOD OF TREATING COGNITIVE IMPAIRMENT - Disclosed is an method of treating cognitive impairment, including administering to a subject in need thereof a combination of a therapeutic agent for neurodegenerative disease and a therapeutically effective amount of a heterocyclic compound represented by the following general formula (I): | 09-03-2009 |
20100267700 | IMMUNOSUPPRESSIVE AGENT AND ANTI-TUMOR AGENT COMPRISING HETEROCYCLIC COMPOUND AS ACTIVE INGREDIENT - A novel method for immunosuppressive in a mammal suffering from an immune disease, including administering to the mammal a therapeutically effective amount of a heterocyclic compound represented by the general formula (I) (wherein X or other variables are as defined in the specification) or a pharmaceutically acceptable salt thereof is disclosed. A novel heterocyclic compound represented by the general formula (II) (wherein X or other variables are as defined in the specification) or a pharmaceutically acceptable salt thereof is also disclosed. | 10-21-2010 |
20110059998 | KIT, COMPOSITION, PRODUCT OR MEDICAMENT FOR TREATING COGNITIVE IMPAIRMENT - A kit, composition, product or medicament for treating cognitive impairment is provided, which includes a therapeutic agent for neurodegenerative disease and a heterocyclic compound represented by the following General Formula (I): or a hydrate thereof, a solvate thereof or a pharmaceutically acceptable salt thereof. | 03-10-2011 |
20110152519 | PYRIMIDINE DERIVATIVE HAVING CELL PROTECTING EFFECT AND USES THEREOF - [Problem] To provide a prophylactic/therapeutic agent against, for example, nerve diseases and the like such as ischemic brain disease and neurodegenerative disease, or a prophylactic/therapeutic agent against diseases against which antioxidant action is effective, as a cell protecting agent, in particular as an inhibitor of brain cell damage or brain cell death. | 06-23-2011 |
20120083486 | KIT, COMPOSITION, PRODUCT OR MEDICAMENT FOR TREATING COGNITIVE IMPAIRMENT - A kit, composition, product or medicament for treating cognitive impairment is provided, which includes a therapeutic agent for neurodegenerative disease and a heterocyclic compound represented by the following General Formula (I): | 04-05-2012 |
20120088765 | PURINE DERIVATIVE AND ANTITUMOR AGENT USING SAME - Disclosed are: a novel purine derivative, a composition thereof, a method for treating tumor using the purine derivative, and an antitumor agent using the purine derivative. Specifically disclosed is a compound represented by formula (I), or a pharmaceutically acceptable salt, solvate or hydrate thereof, or a prodrug thereof. | 04-12-2012 |
20140171452 | METHODS FOR TREATING DEPRESSION, NEURODEGENERATION, INHIBITING AMYLOID BETA DEPOSITION, DELAYING SENESCENCE, AND EXTENDING LIFE SPANS WITH HETEROCYCLIC COMPOUNDS - Disclosed is an antidepressant, neuroprotectant, amyloid β deposition inhibitor, or age retardant composition containing a heterocyclic compound having the general formula (I): | 06-19-2014 |
Patent application number | Description | Published |
20090098719 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer. | 04-16-2009 |
20090134404 | SILICON CARBIDE SEMICONDUCTOR DEVICE - On a major surface of an n-type silicon carbide inclined substrate ( | 05-28-2009 |
20100314629 | SILICON CARBIDE SEMICONDUCTOR DEVICE - In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer. | 12-16-2010 |
20110001209 | SEMICONDUCTOR DEVICE - In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n | 01-06-2011 |
20120028453 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching. | 02-02-2012 |
20120302051 | MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer. | 11-29-2012 |
20130234160 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention includes an n+ type substrate, a drift epitaxial layer formed on the n+ type substrate and having a lower concentration of impurity than the n+ type substrate, a Schottky electrode formed on the drift epitaxial layer, and a PI formed as an insulating film by covering at least an end of the Schottky electrode and an end and a side surface of the drift epitaxial layer. | 09-12-2013 |
20140038397 | MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the silicon oxide film is removed, and a Schottky electrode is formed on the epitaxial layer. Then, a sintering treatment is performed to form a Schottky junction between the Schottky electrode and the epitaxial layer. | 02-06-2014 |