Matsumine

Hiroto Matsumine, Tokyo JP

Patent application number	Description	Published
20090255001	Parkinson's Disease-Related Gene GRK5 and Uses Thereof - Large-scale SNP analyses conducted on subjects in a Parkinson's disease patient group and a normal control group led to the successful identification of a gene (GRK5) associated with Parkinson's disease. In addition, it was newly discovered that phosphorylation of α-synuclein is promoted by enhanced expression of the GRK5 gene, and as a result, the formation of soluble α-synuclein oligomers is promoted, leading to Parkinson's disease. The present invention enables the assessment of Parkinson's disease as well as the screening of therapeutic agents for Parkinson's disease using as an index the expression of GRK5 gene.	10-08-2009

Patent application number	Description	Published
20100044829	METHOD FOR PRODUCING SOI SUBSTRATE AND SOI SUBSTRATE - The present invention is a method for producing an SOI substrate including the steps of: preparing a bond wafer and a base wafer which are composed of single crystal silicon wafers; forming an oxide film on a surface of at least one of the bond wafer and the base wafer so that a thickness of a buried oxide film after bonding becomes 3 μm or more; bonding the bond wafer and the base wafer via the oxide film; performing a law-temperature heat treatment at a temperature of 400° C. or more and 1000° C. or less to the bonded substrate; thinning the bond wafer to be an SOI layer; and increasing bonding strength by performing a high-temperature heat treatment at a temperature exceeding 1000° C. Thus, a method for producing an SOI substrate by which generation of slip dislocations is suppressed and an SOI substrate having a high-quality SOI layer can be obtained, for producing a SOI layer in which the thickness of a buried oxide film is thick as 3 μm or more by a bonding method, etc. are provided.	02-25-2010

Patent application number	Description	Published
20090104752	Method for Producing Soi Wafer - The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1×10	04-23-2009
20090280620	Method for Producing Soi Wafer - The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×10	11-12-2009