Matsukizono
Hiroshi Matsukizono, Osaka JP
Patent application number | Description | Published |
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20100044710 | ACTIVE MATRIX SUBSTRATE - In an active-matrix substrate ( | 02-25-2010 |
20130228774 | SEMICONDUCTOR DEVICE - To inhibit a metal element contained in a glass substrate from being diffused into a gate insulating film or an oxide semiconductor film. A semiconductor device includes a glass substrate, a base insulating film formed using metal oxide over the glass substrate, a gate electrode formed over the base insulating film, a gate insulating film formed over the gate electrode, an oxide semiconductor film which is formed over the gate insulating film and overlapping with the gate electrode, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In a region of the base insulating film that is present in a range of 3 nm or less from a surface of the base insulating film, the concentration of a metal element contained in the glass substrate is less than or equal to 1×10 | 09-05-2013 |
20130270554 | SEMICONDUCTOR DEVICE - The semiconductor conductor device includes a gate electrode | 10-17-2013 |
20130270555 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode | 10-17-2013 |
20140021466 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film. | 01-23-2014 |
20140117350 | DISPLAY DEVICE AND ELECTRONIC DEVICE - To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film. | 05-01-2014 |
20140139775 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film. | 05-22-2014 |
20140306218 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion | 10-16-2014 |
20140306220 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region. | 10-16-2014 |
Hiroshi Matsukizono, Kyoto JP
Patent application number | Description | Published |
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20100025691 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a semiconductor device having a high breakdown voltage and high reliability even if a gate electrode is formed to be thin. The present invention is a semiconductor device including a polycrystal semiconductor layer, a gate insulating film, and a gate electrode, stacked on an insulating substrate in this order, wherein the polycrystal semiconductor layer has a surface roughness of 9 nm or less, the gate insulating film has a multilayer structure including a silicon oxide film on the polycrystal semiconductor layer side and a film containing a material with a dielectric constant higher than a dielectric constant of silicon oxide on the gate electrode side. | 02-04-2010 |
Hiroshi Matsukizono, Kizugawa-Shi, Kyoto JP
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20090261355 | Thin film transistor - To provide: a thin film transistor which can be operated with a low threshold and has a high transistor withstand voltage; a production method of the thin film transistor; and a semiconductor device, an active matrix substrate, and a display device, each including such a thin film transistor. The present invention is a thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode on a substrate in this order, wherein a cross section of the semiconductor layer has a forward tapered shape; the gate insulating film covers a top surface and a side surface of the semiconductor layer; and the gate insulating film has a multilayer structure including a silicon oxide film on a semiconductor layer side and a film made of a material with a dielectric constant higher than a dielectric constant of silicon oxide on a gate electrode side; the gate insulating film satisfies 0.5≦B/A where a thickness of the gate insulating film on the top surface of the semiconductor layer is defined as A and a thickness of the gate insulating film on the side surface of the semiconductor layer is defined as B. | 10-22-2009 |
Hiroshi Matsukizono, Osaka-Shi JP
Patent application number | Description | Published |
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20120181545 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE PROVIDED WITH SEMICONDUCTOR DEVICE - A thin film diode ( | 07-19-2012 |
20120193635 | SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE - A thin film diode ( | 08-02-2012 |
20130037800 | SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A semiconductor device includes an oxide semiconductor film in which a channel portion is formed and a gate portion arranged to be opposed to the channel portion. A drain portion in which the oxide semiconductor film has been subjected to resistance reduction process and an intermediate area which is provided between the drain portion and the channel portion and has not been subjected to resistance reduction process are formed in the oxide semiconductor film, and the semiconductor device includes a conductive film to block resistance reduction process to the intermediate area at least at a part. | 02-14-2013 |
20130271690 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device ( | 10-17-2013 |
20130285054 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A semiconductor device according to the present invention includes: a gate electrode ( | 10-31-2013 |
20140022477 | LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING SAME - There is provided a liquid crystal display panel that improves the reliability of thin film transistors while suppressing a degradation in display quality. A G TFT ( | 01-23-2014 |
20140346502 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 11-27-2014 |
20150108467 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device ( | 04-23-2015 |
Hiroyuki Matsukizono, Kanagawa JP
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20150291440 | METHOD FOR PRODUCING CHIRAL METAL OXIDE STRUCTURE, AND CHIRAL POROUS STRUCTURE - A method for producing a chiral metal oxide structure, involves a sol-gel step of allowing a transition metal compound having a bi- or higher dentate chelate ligand to act on a chiral supramolecular crystal of an acid-base complex containing a polymer having a linear polyethyleneimine skeleton and a chiral dicarboxylic acid compound having two carboxyl groups and four or more carbon atoms to form a metal oxide layer on a surface of the chiral supramolecular crystal; and a calcination step of thermally decomposing the organic chiral supramolecular crystal after the sol-gel step to generate a transition metal oxide structure composed of the metal oxide layer prepared with the supramolecular crystal as a template. | 10-15-2015 |
Miho Matsukizono, Fukuoka JP
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20090298700 | MONOCLONAL ANTIBODY SPECIFICALLY RECOGNIZING MODIFICATION SITE AFTER TRANSLATION OF P53 AND KIT FOR ASSAYING MODIFICATION SITE CONTAINING THE SAME - The present invention provides a monoclonal antibody recognizing modification after translation of p53 in a manner specific to a modification site, an antibody microarray comprising the antibody immobilized on a substrate, etc. Disclosed is a monoclonal antibody which reacts specifically with a peptide consisting of an amino acid sequence of at least 6 consecutive amino acids containing a predetermined amino acid residue of the amino acid sequence represented by SEQ ID NO: 1, wherein the amino acid residue is phosphorylated or acetylated, or with a peptide having one to several arbitrary amino acids added to the above peptide, but does not react with the above peptide which is not phosphorylated or acetylated. | 12-03-2009 |