Matsubayashi, JP
Daisuke Matsubayashi, Atsugi JP
Patent application number | Description | Published |
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20120032161 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Further, by reducing the number of source lines, the storage capacity per unit area is increased. | 02-09-2012 |
20120032162 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Accordingly, the storage capacity per unit area is increased. | 02-09-2012 |
20120104480 | STORAGE DEVICE - A storage device in which stored data can be held even when power is not supplied, and stored data can be read at high speed without turning on a transistor included in a storage element is provided. In the storage device, a memory cell having a transistor including an oxide semiconductor layer as a channel region and a storage capacitor is electrically connected to a capacitor to form a node. The voltage of the node is boosted up in accordance with stored data by capacitive coupling through a storage capacitor and the potential is read with an amplifier circuit to distinguish data. | 05-03-2012 |
20120228688 | MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A memory device that is as small in area as possible and has an extremely long data retention period. A transistor with extremely low leakage current is used as a cell transistor of a memory element in a memory device. Moreover, in order to reduce the area of a memory cell, the transistor is formed so that its source and drain are stacked in the vertical direction in a region where a bit line and a word line intersect each other. Further, a capacitor is stacked above the transistor. | 09-13-2012 |
20120236634 | MEMORY DEVICE AND ELECTRONIC DEVICE - A selection operation is performed for individual memory cells. A device includes a first memory cell and a second memory cell provided in the same row as the first memory cell, each of which includes a field-effect transistor having a first gate and a second gate. The field-effect transistor controls at least data writing and data holding in the memory cell by being turned on or off. The device further includes a row selection line electrically connected to the first gates of the field-effect transistors included in the first memory cell and the second memory cell, a first column selection line electrically connected to the second gate of the field-effect transistor included in the first memory cell, and a second column selection line electrically connected to the second gate of the field-effect transistor included in the second memory cell. | 09-20-2012 |
20120262979 | MEMORY DEVICE - A memory device includes a memory cell storing data as stored data, an output signal line, and a wiring to which a voltage is applied. The memory cell includes a comparison circuit performing a comparison operation between the stored data and search data and taking a conduction state or a non-conduction state in accordance with the operation result, and a field-effect transistor controlling writing and holding of the stored data. A voltage of the output signal line is equal to the voltage of the wiring when the comparison circuit is in the conduction state. | 10-18-2012 |
20120292614 | SEMICONDUCTOR DEVICE - A content addressable memory has many elements in one memory cell; thus, the area of one memory cell tends to be large. In view of the above, it is an object of an embodiment of the present invention to reduce the area of one memory cell. Charge can be held with the use of a channel capacitance in a reading transistor (capacitance between a gate electrode and a channel formation region). In other words, the reading transistor also serves as a charge storage transistor. One of a source and a drain of a charge supply transistor is electrically connected to a gate of the reading and charge storage transistor. | 11-22-2012 |
20120314470 | MEMORY DEVICE - A memory cell includes a first transistor controlling writing of the first date by being in an on state, and holding of the first data by being in an off state, a second transistor in which a potential of one of a source and a drain is a potential of the second data and a potential of a gate is a potential of the first data, and a third transistor which has a conductivity type opposite to that of the second transistor, which has one of a source and a drain electrically connected to the other of the source and the drain of the second transistor, and in which a potential of a gate is a potential of the first data. | 12-13-2012 |
20130134413 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1 | 05-30-2013 |
20130161611 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Release of oxygen at a side surface of an island-shaped oxide semiconductor film is controlled and decrease in resistance is prevented. A semiconductor device includes an island-shaped oxide semiconductor film at least partly including a crystal, a first gate insulating film provided to cover at least a side surface of the island-shaped oxide semiconductor film, and a second gate insulating film provided to cover at least the island-shaped oxide semiconductor film and the first gate insulating film. The first gate insulating film is an insulating film that supplies oxygen to the island-shaped oxide semiconductor film, and the second gate insulating film is an insulating film which has a low oxygen-transmitting property | 06-27-2013 |
20130181214 | SEMICONDUCTOR DEVICE - The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less). Alternatively, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the resistivity of the source region and the drain region is 1.9×10 | 07-18-2013 |
20130187150 | SEMICONDUCTOR DEVICE - A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly integrated semiconductor device including the transistor is provided. A short-channel effect which is caused in a transistor including silicon is not substantially caused in the transistor including an oxide semiconductor film. The channel length of the transistor including the oxide semiconductor film is greater than or equal to 5 nm and less than 60 nm, and the channel width thereof is greater than or equal to 5 nm and less than 200 nm. At this time, the channel width is made 0.5 to 10 times as large as the channel length. | 07-25-2013 |
20130200376 | TRANSISTOR AND SEMICONDUCTOR DEVICE - A transistor which is resistant to a short-channel effect is provided. A semiconductor which leads to the following is used in a junction portion between a source and a semiconductor layer and a junction portion between a drain and the semiconductor layer: a majority carrier density n | 08-08-2013 |
20130270552 | SEMICONDUCTOR DEVICE - A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor. | 10-17-2013 |
20130285047 | SEMICONDUCTOR DEVICE - A transistor including an oxide semiconductor film, in which the threshold voltage is prevented from being a negative value, is provided. A high quality semiconductor device having the transistor including an oxide semiconductor film is provided. A transistor includes an oxide semiconductor film having first to third regions. The top surface of the oxide semiconductor film in the first region is in contact with a source electrode or a drain electrode. The top surface of the oxide semiconductor film in the second region is in contact with a protective insulating film. The thickness of the second region is substantially uniform and smaller than the maximum thickness of the first region. The top surface and a side surface of the oxide semiconductor film in the third region are in contact with the protective insulating film. | 10-31-2013 |
20140034954 | SEMICONDUCTOR DEVICE - To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film. | 02-06-2014 |
20140110705 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition. | 04-24-2014 |
20140110707 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition. | 04-24-2014 |
20140110708 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V. | 04-24-2014 |
20140131702 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having a structure which can suppress a decrease in electrical characteristics, which becomes more significant with miniaturization. The semiconductor device includes a plurality of gate electrode layers separated from each other. One of the plurality of gate electrode layers includes a region which overlaps with a part of an oxide semiconductor layer, a part of a source electrode layer, and a part of a drain electrode layer. Another of the plurality of gate electrode layers overlaps with a part of an end portion of the oxide semiconductor layer. The length in the channel width direction of each of the source electrode layer and the drain electrode layer is shorter than that of the one of the plurality of gate electrode layers. | 05-15-2014 |
20140138676 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a semiconductor film overlapping with the gate electrode with the gate insulating film positioned therebetween, a source electrode and a drain electrode that are in contact with the semiconductor film, and an oxide film over the semiconductor film, the source electrode, and the drain electrode. An end portion of the semiconductor film is spaced from an end portion of the source electrode or the drain electrode in a region overlapping with the semiconductor film in a channel width direction. The semiconductor film and the oxide film each include a metal oxide including In, Ga, and Zn. The oxide film has an atomic ratio where the atomic percent of In is lower than the atomic percent of In in the atomic ratio of the semiconductor film. | 05-22-2014 |
20140145625 | Semiconductor Device, Display Device, and Electronic Device - To prevent an influence of normally-on characteristics of the transistor which a clock signal is input to a terminal of, a wiring to which a first low power supply potential is appled and a wiring to which a second low power supply potential lower than the first low power supply potential is applied are electrically connected to a gate electrode of the transistor. A semiconductor device including the transistor can operate stably. | 05-29-2014 |
20140151691 | SEMICONDUCTOR DEVICE - A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film. The first oxide semiconductor layer includes a first region. The gate insulating film includes a second region. When the thickness of the first region is T | 06-05-2014 |
20140175435 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed. | 06-26-2014 |
20140203276 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more. | 07-24-2014 |
20140231799 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention comprises first and second transistors and first and second capacitors. One of source and drain electrodes of the first transistor is electrically connected to a first wiring, the other is electrically connected to a second wiring, and a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor. The other of the source and drain electrodes of the second transistor is electrically connected to the first wiring, and a gate electrode of the second transistor is electrically connected to one of electrodes of a second capacitor and a fifth wiring. The other electrode of the first capacitor is electrically connected to a third wiring, and the other electrode of the second capacitor is eclectically connected to a fourth wiring. | 08-21-2014 |
20140284673 | Memory Device And Electronic Device - A selection operation is performed for individual memory cells. A device includes a first memory cell and a second memory cell provided in the same row as the first memory cell, each of which includes a field-effect transistor having a first gate and a second gate. The field-effect transistor controls at least data writing and data holding in the memory cell by being turned on or off. The device further includes a row selection line electrically connected to the first gates of the field-effect transistors included in the first memory cell and the second memory cell, a first column selection line electrically connected to the second gate of the field-effect transistor included in the first memory cell, and a second column selection line electrically connected to the second gate of the field-effect transistor included in the second memory cell. | 09-25-2014 |
20140291671 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween. | 10-02-2014 |
20140326991 | SEMICONDUCTOR DEVICE - A semiconductor device in which variation in electrical characteristics between transistors is reduced is provided. A transistor where a channel is formed in an oxide semiconductor layer is included, and a concentration of carriers contained in a region where the channel is formed in the oxide semiconductor layer is lower than or equal to 1×10 | 11-06-2014 |
20140339542 | SEMICONDUCTOR DEVICE - A semiconductor device includes a dual-gate transistor in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode. In the channel width direction of the transistor, a side surface of each of the first and second gate electrodes is on the outer side of a side surface of the oxide semiconductor film. The first or second gate electrode faces the side surface of the oxide semiconductor film with the gate insulating film provided between the first or second gate electrode and the oxide semiconductor film. | 11-20-2014 |
20140339543 | SEMICONDUCTOR DEVICE - A semiconductor device includes a dual-gate transistor including an oxide semiconductor film between a first gate electrode and a second gate electrode, a gate insulating film between the oxide semiconductor film and the second gate electrode, and a pair of electrodes in contact with the oxide semiconductor film. The semiconductor device further includes an insulating film over the gate insulating film, and a conductive film over the insulating film and connected to one of the pair of electrodes. The insulating film includes an opening in at least a region overlapping with the oxide semiconductor film in which the second gate electrode is provided in contact with the gate insulating film. The second gate electrode is formed using the same material as the conductive film connected to the one of the pair of electrodes. | 11-20-2014 |
20140339544 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction. | 11-20-2014 |
20140361290 | DISPLAY DEVICE - In a pixel including a selection transistor, a driver transistor, and a light-emitting element, as the driver transistor, a transistor is used in which a channel is formed in an oxide semiconductor film and its channel length is 0.5 μm or greater and 4.5 μm or less. The driver transistor includes a first gate electrode over an oxide semiconductor film and a second gate electrode below the oxide semiconductor film. The first gate electrode and the second gate electrode are electrically connected to each other and overlap with the oxide semiconductor film. Furthermore, in the selection transistor of a pixel, which does not need to have field-effect mobility as high as that of the driver transistor, a channel length is made longer than at least the channel length of the driver transistor. | 12-11-2014 |
20140361292 | Semiconductor Device - Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter. | 12-11-2014 |
20140362324 | SEQUENTIAL CIRCUIT AND SEMICONDUCTOR DEVICE - The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor. | 12-11-2014 |
20150021596 | Semiconductor Device - A semiconductor device is provided with a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor film in contact with a top surface of the insulating surface, a side surface of the first oxide semiconductor film, and side and top surfaces of the second oxide semiconductor film; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the gate insulating film and faces the top and side surfaces a of the second oxide semiconductor film. A thickness of the first oxide semiconductor film is larger than a sum of a thickness of the third oxide semiconductor film and a thickness of the gate insulating film, and the difference is larger than or equal to 20 nm. | 01-22-2015 |
20150034945 | SEMICONDUCTOR DEVICE - A semiconductor device with a transistor in which current flowing between a source and a drain when the voltage of a gate electrode is 0 V can be reduced is provided. The semiconductor device incorporates a multi-gate transistor having an oxide semiconductor film formed over an insulating surface, a first gate insulating film in contact with a first surface of the oxide semiconductor film, a first gate electrode between the insulating surface and the oxide semiconductor film, a second gate insulating film in contact with a second surface of the oxide semiconductor film, and a second gate electrode in contact with the second gate insulating film. The oxide semiconductor film has a first region overlapping with the first gate electrode and a second region not overlapping with the first gate electrode, and the second gate electrode overlaps with the first region and the second region of the oxide semiconductor film. | 02-05-2015 |
20150069384 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with side surfaces of the first oxide semiconductor film, side surfaces of the second oxide semiconductor film, and the top surface of the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the top surface of the gate insulating film. A length obtained by subtracting a channel length between the source electrode and the drain electrode from a length of the second oxide semiconductor film in the channel length direction is 0.2 times to 2.0 times as long as the channel length. | 03-12-2015 |
20150076493 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a transistor having high field effect mobility. To provide a transistor having stable electrical characteristics. To provide a transistor having low off-state current (current in an off state). To provide a semiconductor device including the transistor. The semiconductor device includes a semiconductor; a source electrode and a drain electrode including regions in contact with a top surface and side surfaces of the semiconductor; a gate insulating film including a region in contact with the semiconductor; and a gate electrode including a region facing the semiconductor with the gate insulating film provided therebetween. A length of a region of the semiconductor, which is not in contact with the source and drain electrodes, is shorter than a length of a region of the semiconductor, which is in contact with the source and drain electrodes, in a channel width direction. | 03-19-2015 |
Daisuke Matsubayashi, Ebina JP
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20150109019 | METHOD FOR EVALUATING SEMICONDUCTOR DEVICE - A method for evaluating a buried channel in a semiconductor device including a semiconductor layer having a stacked-layer structure is provided. A method for evaluating a semiconductor device is provided, which includes the steps of: electrically short-circuiting a source and a drain of a transistor; applying DC voltage and AC voltage to a gate to obtain a CV characteristic that indicates a relationship between the DC voltage and a capacitance between the gate and each of the source and the drain; and determining that a semiconductor layer of the transistor includes a stacked-layer structure, when the capacitance in a region in an accumulation state in the CV characteristic is increased stepwise. | 04-23-2015 |
Fuyuki Matsubayashi, Kawasaki JP
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20090024381 | Simulation device for co-verifying hardware and software - A simulation device capable of verifying coordinated operation of software and hardware faster and more accurately. The simulation device has a framework including a virtual OS and a virtual CPU to execute software under test. The virtual OS and CPU also serve as a first scheduler that manages an execution schedule for the software under test. The framework includes a communication interface for communication between the software under test and hardware models. A second scheduler manages simulation processes of the framework and the hardware model. The virtual OS and CPU release their execution right to the second scheduler according to the execution schedule of the software under test. | 01-22-2009 |
Haruyuki Matsubayashi, Numazu-Shi JP
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20090261496 | DIE CLAMPING UNIT AND DIE CLAMPING METHOD - Used in a method of this invention is a die clamping unit, which comprises a tie bar movably attached to a stationary platen, a halfnut positioning servomotor which advances and retreats to the tie bar, a halfnut which is provided on a movable platen and fixes the movable platen and the tie bar together by engaging the tie bar, an engaging mechanism which engages the halfnut with the tie bar, a hydraulic die clamping cylinder which presses the stationary platen and the movable platen, and a control device which controls the halfnut positioning servomotor and the hydraulic cylinder. The control device drives the halfnut positioning servomotor to remove a clearance between the halfnut and an engaging groove of the tie bar before a die clamping process carried out by the hydraulic cylinder. | 10-22-2009 |
20120306112 | MOLDING MACHINE AND INJECTION MOLDING CONTROLLING METHOD - A molding machine according to an embodiment includes a stationary platen equipped with a stationary die, a movable platen equipped with a movable die, a locking drive mechanism to move the movable platen forward or backward and to lock the movable die against the stationary die, a detecting portion to detect information about a locking state, an injection device, and a control unit to monitor the information obtained by the detecting portion in an injecting process and to control an injection pressure of the injection device based on a value obtained from the information. | 12-06-2012 |
20130147078 | MOLDING MACHINE CONTROLLING APPARATUS AND METHOD OF CONTROLLING MOLDING MACHINE - A pressure detector which detects a pressure of a material in a cylinder, and a pressure compensator which compares, in injection control, a preset value of an injection pressure with an actual measurement value of the injection pressure detected by the pressure detector, generates an injection speed command to a servo motor based on a comparison value, and varies a proportional gain based on a deviation of the actual measurement value of the injection pressure from the preset value of the injection pressure. | 06-13-2013 |
20140175691 | MOLD PROTECTION APPARATUS, MOLD PROTECTION METHOD AND MOLD CLAMPING APPARATUS - According to one embodiment, a mold protection apparatus for use in an opening/closing apparatus, the movable platen being formed to be movable in a direction towards or away from a fixed platen having a fixed mold and being fixedly provided with a movable mold, the mold protection apparatus comprises a deriving means, a calculating means, and a comparing means. The deriving means configured to obtain an actual operation drive force output from the motor. The calculating means configured to calculate a theoretical operation drive force of the motor. The comparing means configured to compare a difference between the actual operation drive force derived by the deriving means and the theoretical operation drive force calculated by the calculating means with a threshold value. | 06-26-2014 |
Hideki Matsubayashi, Kanagawa JP
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20110008516 | FRUIT JUICE-CONTAINING ALCOHOLIC BEVERAGE - The present invention provides an alcohol-containing fruit juice beverage containing 9 v/v % or more of alcohol and a fruit juice selected from the group consisting of apple juice, grapefruit juice and grape juice, wherein the beverage further contains (A) at least 5.0 mg/100 ml of chlorogenic acids when the fruit juice is apple juice, (B) at least 60 mg/100 ml of malic acid when the fruit juice is grapefruit juice, or (C) at least 30 mg/100 ml of potassium ions when the fruit juice is grape juice, whereby an irritation that is distinctive of alcohol and originates from the high concentration of alcohol is reduced and the flavor of mature fruit is enhanced. | 01-13-2011 |
20110177225 | FRUIT JUICE-CONTAINING ALCOHOLIC BEVERAGE BASE AND BEVERAGE OBTAINED BY DILUTING THE SAME - A fruit juice-containing alcoholic beverage base obtained by mixing a high concentration of fruit juice and a high concentration of alcohol or its dilution-type alcoholic beverage is provided. The fruit juice is contained at a specific ratio to the alcohol so that the irritation distinctive of alcohol is reduced or eliminated and the base has a flavor of mature fruit. In particular, a fruit juice-containing alcoholic beverage base containing at least 9 v/v % of an alcohol and a fruit juice wherein the fruit juice is contained in an amount that is at least 11.5 times the amount of the alcohol, based on the percentage of fruit juice, or an alcoholic beverage prepared by dilution of the base is provided. | 07-21-2011 |
Hideki Matsubayashi, Okayama-Shi JP
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20090285615 | INK RIBBON CASSETTE - An ink ribbon cassette | 11-19-2009 |
Hideo Matsubayashi, Ueda-Shi JP
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20100200284 | SUBSTRATE MANUFACTURING APPARATUS, SUBSTRATE MANUFACTURING METHOD, BALL-MOUNTED SUBSTRATE, AND ELECTRONIC COMPONENT-MOUNTED SUBSTRATE - A substrate manufacturing apparatus manufactures a ball-mounted substrate and has a ball mounting apparatus which includes a ball vacuum chucking apparatus including a vacuum chucking head that carries out a vacuum chucking process to chuck balls at edges of inlets formed in a vacuum chucking surface and which mounts the balls vacuum-chucked by the vacuum chucking head on a substrate, the ball vacuum chucking apparatus further including: a holding vessel that holds the balls; and a vacuum chucking/holding unit that vacuum chucks and holds the balls held in the holding vessel on a front end thereof, and carrying out a supplying process that brings the vacuum chucking/holding unit that holds the balls on the front end thereof and the vacuum chucking surface of the vacuum chucking head relatively close to supply the balls to the vacuum chucking head while air is being drawn through the inlets. | 08-12-2010 |
Hirokazu Matsubayashi, Kawasaki JP
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20110202923 | INFORMATION PROCESSING APPARATUS, COMPUTER-READABLE MEDIUM STORING INFORMATION PROCESSING PROGRAM, AND INFORMATION PROCESSING METHOD - A processing function determination section included in an information processing apparatus determines a differential processing function which is a processing function that is realized by a first program and that is not realized by a second program. A control information determination section reads out relation information which associates a plurality of processing functions with one or more pieces of control information related to each of the plurality of processing functions from a storage section and determines a piece of control information related to the differential processing function on the basis of the relation information. | 08-18-2011 |
20130159332 | MANAGEMENT SYSTEM, MANAGEMENT APPARATUS, AND MANAGEMENT METHOD FOR ELECTRONIC DEVICE - A collection unit collects attribute information of each of a plurality of electronic devices, and registers the collected attribute information in mounted device information correspondingly to a mounting position of the electronic device in a management system. A determination unit refers to device definition information in which attribute information of each electronic device mounted on the management system is registered correspondingly to a mounting position, determines as a comparison object position a mounting position in which the attribute information registered in the mounted device information is not matched with the attribute information registered in the device definition information and, when a plurality of comparison object positions are present, determines whether the attribute information of the mounted device information corresponding to one comparison object position is matched with the attribute information of the device definition information corresponding to another comparison object position. | 06-20-2013 |
Hirokazu Matsubayashi, Kawasaki-Shi JP
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20110170392 | STORAGE MANAGEMENT APPARATUS AND STORAGE MANAGEMENT METHOD - A reference-capacity calculating unit calculates a reference capacity of each of storage devices storing therein data on the basis of an actual capacity of each storage device. A difference calculating unit calculates a difference value between the reference capacity calculated by the reference-capacity calculating unit and the actual capacity of each storage device. A maximum-value retrieving unit retrieves the maximum difference value out of the respective difference values of the storage devices calculated by the difference calculating unit. A defined-capacity determining unit determines a defined capacity, which is an actually-used capacity of each storage device, on the basis of a value obtained by subtracting the maximum difference value from the reference capacity calculated by the reference-capacity calculating unit. | 07-14-2011 |
Hiroshi Matsubayashi, Kanagawa JP
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20090205965 | Method and apparatus for forming oxide coating - Disclosed are a method and an apparatus for forming an oxide coating film with excellent corrosion resistance and adhesiveness on a cathode made of a metal plate by a simple process at low cost. A direct current voltage is applied between an anode ( | 08-20-2009 |
Hiroshi Matsubayashi, Yokohama-Shi JP
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20120222963 | Surface Treated Metal Materials, Method of Treating the Surfaces Thereof, Resin Coated Metal Materials, Cans and Can Lids - A surface-treated metal material having, formed on the surface of a metal base member, an inorganic surface-treating layer that contains inorganic components or, further having an organic surface-treating layer formed on the inorganic surface-treating layer, the inorganic surface-treating layer containing at least M (M is at least one of Ti, Zr and Al), O and F. The organic surface-treating layer contains a silane coupling agent containing Si in an amount of 0.8 to 30 mg/m | 09-06-2012 |
Hiroyuki Matsubayashi, Sunto-Gun JP
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20130204491 | VEHICLE BRAKING DEVICE AND CONTROL DEVICE - Provided is a vehicle braking device for applying a braking force on tires arranged on a vehicle body rotatably, the vehicle braking device including a fluid pressure braking unit configured to act the braking force on the tires; a master cylinder configured to supply fluid pressure to the fluid pressure braking unit; a pressure detection sensor configured to detect pressure of the fluid pressure supplied from the master cylinder to the fluid pressure braking unit; and a control device that includes a storage unit configured to store detected driving conditions, a braking operation determining unit configured to determine state of the braking operation based on the fluid pressure detected by the pressure detection sensor, and a control unit configured to control operation based on the determination result of the braking operation determining unit. | 08-08-2013 |
20130211668 | VEHICLE BRAKING DEVICE AND CONTROL DEVICE - A vehicle braking device including a braking operation judging unit that judges that a braking operation is input when a fluid pressure detected by a pressure detecting sensor is not smaller than a threshold value set in advance in a process of a first mode in which it is judged that the device normally operates, and judges that the braking operation is input when judging that wheel deceleration of a tire detected by a wheel speed detecting sensor is larger than a threshold value in a process of a second mode in which it is judged the pressure detecting sensor does not normally detect a pressure or it is judged that a failure occurs in the fluid pressure, and a control unit puts a brake lamp arranged on a vehicle body into a lighting state from a non-lighting state when it is judged that the braking operation is input. | 08-15-2013 |
20130325253 | VEHICLE BRAKE DEVICE - In a vehicle brake device having a hydraulic pressure sensor for detecting an output value corresponding to the pressure of a fluid pressure adjusted by a master cylinder and a master cylinder pressure calculating unit for storing the output value of the hydraulic pressure sensor at which the pressure of the master cylinder becomes 0 as a zero-point correction value and calculating a master cylinder pressure by correcting the output value of the hydraulic pressure sensor based on the zero-point correction value, the vehicle brake device has a zero-point correction value updating unit for setting, when the output value detected by the hydraulic pressure sensor is smaller than the zero-point correction value stored in the master cylinder pressure calculating unit, the output value as a new zero-point correction value and updating the zero-point correction value. | 12-05-2013 |
Hiroyuki Matsubayashi, Aichi-Ken JP
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20110210604 | BRAKING CONTROL APPARATUS - In a braking control apparatus, a plurality of pumps are driven by a common first motor. A brake supplies operating fluid to pipelines by operating the first motor, and controls opening/closing of a fluid pressure regulating valve so as to make the wheel cylinder pressure in the right front wheel approach the right front wheel target pressure, and controls opening closing of a fluid pressure regulating valve so as to make the wheel cylinder pressure in the left rear wheel approach the left rear wheel target pressure. In the case where the right front wheel target pressure is zero when the fluid pressure regulating valve is to be opened so as to make the wheel cylinder pressure in the left rear wheel approach the left rear wheel target pressure, the brake turns off the first motor. | 09-01-2011 |
Hisashi Matsubayashi, Minato-Ku JP
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20100050503 | FUEL ADDITIVE - A fuel additive contains ferrocene and/or ferrocene derivative(s), and lecithin. A fuel additive contains 80 to 99 mass % of ferrocene and/or ferrocene derivative(s), and 1 to 20 mass % of lecithin, and being in the solid state. A fuel additive contains 78 to 99 mass % of ferrocene and/or ferrocene derivative(s), 0.9 to 20 mass % of lecithin and 0.1 to 2 mass % of water, and being in the particle state. A fuel additive containing 2 to 5 mass % of ferrocene and/or ferrocene derivative(s), 5 to 50 mass % of lecithin and mineral oil, and being in the liquid state, wherein the ferrocene and/or ferrocene derivative(s), and the lecithin are dissolved in the mineral oil. The above-mentioned fuel additive is used by being added into a fuel so as to make the concentration of the ferrocene and/or ferrocene derivative(s) and the lecithin in ranges of 1 to 50 ppm, and 0.01 to 500 ppm, respectively. | 03-04-2010 |
Katsuyuki Matsubayashi, Chiba-Shi JP
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20130122391 | ELECTRODE FOR USE IN A FUEL CELL - The disclosed electrode for use in a fuel cell comprises a flexible carbon-fiber nonwoven fabric and a fuel-cell catalyst, such as a metal catalyst or a carbon-alloy catalyst, supported on the surfaces of the carbon fibers constituting the flexible carbon-fiber nonwoven fabric. Said flexible carbon-fiber nonwoven fabric is formed by carbonizing a nonwoven fabric obtained by electrospinning a composition containing: an electrospinnable macromolecular substance; an organic compound that is different from said macromolecular substance; and a transition metal. This structure allows the provision of an electrode, for use in a fuel cell, which uses a flexible carbon-fiber nonwoven fabric as a substrate and combines the functions of a gas-diffusion layer and an electrocatalyst layer. | 05-16-2013 |
Kazuhiko Matsubayashi, Matsue-Shi JP
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20130125979 | METHOD FOR PREVENTING CATALYST RELEASE FROM DYE-SENSITIZED SOLAR CELL AND FROM CATALYTIC ELECTRODES - Providing a dye-sensitized solar cell having high durability and thermal resistance, and preventing elution of a platinum group catalyst from a catalytic electrode: by surface-treating the catalytic electrode with (a) a specific sulfur material having a molecular weight of 32 to 10,000 containing a sulfur atom having an oxidation number of -2 to 0, (b) another specific sulfur material containing no sulfur atom having an oxidation number of -2 to 0, but containing a sulfur atom having an oxidation number of +1 to +4 [with the proviso that the sulfur material (b) is such a material that a surface of the surface-treated catalyst electrode has a photoelectron peak within a binding energy range of 161 to 165 eV in an X-ray photoelectron spectrum], or (c) a mixture of the sulfur materials (a) and (b); and/or by adding the sulfur material into the electrolyte layer. | 05-23-2013 |
Kazuhiro Matsubayashi, Yokohama-Shi JP
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20090232476 | PROGRAM RECORDING ASSIST APPARATUS, VIDEO RECORDING AND PLAYBACK APPARATUS, AND PROGRAM RECORDING ASSIST METHOD - A program recording assist apparatus is configured to notify permission or inhibition of copying or moving of program data of an unrecorded program designated to be recorded, before recording or moving the program data to a recording medium. The apparatus includes a determination unit configured to determine permission or inhibition of sequential recording or moving of the program data to a plurality of recording mediums based on a copy control attribute of the program, type of recording medium, and a recording mode used at a time of recording to the recording medium, and a control unit configured to display a path capable of recording or moving the program data to the plurality of recording mediums on a display device based on the result determined by the determination unit. | 09-17-2009 |
20120293400 | IMAGE DISPLAY SYSTEM, IMAGE DISPLAY APPARATUS AND CALIBRATION METHOD - A target value of a contrast ratio of an image display apparatus is set, and the number of levels, among which the luminance of a backlight is changed over, and each level of luminance are decided according to the target value of the contrast ratio. The backlight is made to emit light at the individual levels of luminance of the backlight thus decided, and at the same time, the image display apparatus is made to display a predetermined color chart thereon, so that color measurement is thereby carried out, and calibration is carried out at each level of luminance of the backlight based on a color value thus measured. The calibration is carried out only on an appropriate number of levels of the luminance of the backlight required to achieve the target value of the contrast ratio. | 11-22-2012 |
Kazuhiro Matsubayashi, Kanagawa-Ken JP
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20130093673 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, STORAGE MEDIUM, AND PROGRAM - In an information processing apparatus capable of receiving data and displaying objects, the convenience of display operation is improved. More specifically, an information processing apparatus for receiving data described in a markup language and including first hierarchical level elements delimited by predetermined tags and second hierarchical level elements which belong to a range delimited by the predetermined tags, and displaying the received data on a display device, includes a receiving unit for receiving key-input first and second signals, a switching unit for switching selection between the first hierarchical level elements or between the second hierarchical level elements when the first signal is received, and switching selection between the first and second hierarchical level elements when the second signal is received, and a selected element display unit for displaying the selected element on the display device. A desired display object can be selected by a few key input operations. | 04-18-2013 |
Kazumi Matsubayashi, Hiroshima-Shi JP
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20130243582 | COMPRESSOR AND METHOD OF ASSEMBLING THE SAME - A compressor casing to allow easy assemblage and disassembling, a compressor provided with the same, and a method of assembling the compressor are provided. The compressor casing includes a substantially tubular casing, a plurality of sealing surfaces provided on an inner circumferential surface of the casing along an axial direction thereof, a sealing means provided for each sealing surface, a substantially cylindrical bundle for accommodating a blade inside and for being assembled to the casing so as to contact with the sealing surfaces, and a roller provided on an outer circumferential surface of the bundle, for rolling on the inner circumferential surface of the casing when the bundle is assembled to or removed from the casing. The sealing surfaces are connected with one another tapered surfaces. | 09-19-2013 |
Kazunari Matsubayashi, Kumamoto JP
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20090068787 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid state image pickup device in which a semiconductor substrate includes a pixel region where a plurality of pixels are arranged, each pixel including a signal charge accumulating portion and a transistor, and a pixel well of a first conductive type shared by the respective pixels, the method comprising: (a) a first step of forming a first impurity doped region by ion-implanting an impurity of the first conductive type to a surface of the semiconductor substrate together with the pixel well at a surface density of 1×10 | 03-12-2009 |
Kazuyuki Matsubayashi, Osaka-Fu JP
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20090205625 | HEATING COOKER - A protruding portion | 08-20-2009 |
20100021146 | VAPOR GENERATION DEVICE AND COOKING DEVICE - The inside of an evaporation container ( | 01-28-2010 |
Kei Matsubayashi, Kanagawa JP
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20080198930 | Image information transmission system, image information transmitting apparatus, image information receiving apparatus, image information transmission method, image information transmitting method, and image information receiving method - An image information transmission system may include an image information transmitting apparatus, and an image information receiving apparatus. The image information transmitting apparatus may obtain primary-image transmission data, which is subjected to predetermined compression-coding including bidirectionally predictive coding, for transmitting a moving image representing a primary image, and may generate secondary-image transmission data for transmitting a secondary image to be displayed together with the primary image on a display screen. The primary-image transmission data and the secondary-image transmission data may be transmitted to the image information receiving apparatus via a predetermined network communication link. Upon receipt of the primary-image transmission data and secondary-image transmission data, the image information receiving apparatus may decode the primary-image transmission data using a decoding scheme corresponding to the coding process, and may decode the secondary-image transmission data to generate a secondary-image video signal. The primary-image video signal and the secondary-image video signal may be combined to display an image. | 08-21-2008 |
20090317064 | Playback apparatus, method, and program - The present invention relates to a playback apparatus, a method, and a program which can appropriately perform jump playback when content transmitted through a network is played back in real time. A terminal | 12-24-2009 |
20100309382 | TRANSMISSION APPARATUS, RECEPTION APPARATUS, COMMUNICATION SYSTEM, TRANSMISSION METHOD, RECEPTION METHOD AND PROGRAMS THEREFOR - [Object] To provide a transmission apparatus, a reception apparatus, a communication system, a transmission method, a reception method, and programs therefor that are capable of efficiently transmitting at least a plurality of pieces of video data included in data of a plurality of contents at the same time. | 12-09-2010 |
20120147262 | TRANSMITTING APPARATUS, TRANSMITTING METHOD, RECEIVING APPARATUS, RECEIVING METHOD, AND TRANSMITTING AND RECEIVING SYSTEM - A transmitting and receiving system includes a transmitting apparatus that delivers a main stream for performing a streaming broadcast and an auxiliary stream generated from the main stream and a receiving apparatus that receives the main stream and the auxiliary stream from the transmitting apparatus. The transmitting apparatus includes a main-stream storing unit, a bit-rate-reducing converting unit, an auxiliary-stream storing unit, and a delivery control unit. The receiving apparatus includes a main-stream-reception control unit, an auxiliary-stream-reception control unit, a data processing unit, and an inter-stream-error storing unit. When tuning operation by a user is received, the main-stream-reception control unit selects, from data of an auxiliary stream of a tuned broadcast, data at such a time that the auxiliary stream is possible to be switched to a main stream without shift of scenes when the auxiliary stream is switched to the main stream later and supplies the data to the data processing unit. | 06-14-2012 |
20140125871 | TRANSMISSION APPARATUS, RECEPTION APPARATUS, COMMUNICATION SYSTEM, TRANSMISSION METHOD, RECEPTION METHOD, AND PROGRAMS THEREOF - [Object] To provide a transmission apparatus, a reception apparatus, a communication system, a transmission method, a reception method, and programs therefor that are capable of efficiently transmitting at least a plurality of pieces of video data included in data of a plurality of contents at the same time. [Solving Means] A switch unit ( | 05-08-2014 |
20140354889 | TRANSMISSION APPARATUS, RECEPTION APPARATUS, COMMUNICATION SYSTEM, TRANSMISSION METHOD, RECEPTION METHOD, AND PROGRAMS THEREOF - [Object] To provide a transmission apparatus, a reception apparatus, a communication system, a transmission method, a reception method, and programs therefor that are capable of efficiently transmitting at least a plurality of pieces of video data included in data of a plurality of contents at the same time. | 12-04-2014 |
Kenji Matsubayashi, Tokyo JP
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20080206222 | Preventive/Therapeutic Composition For Free Radical Disease - A preventive/therapeutic composition for free radical diseases, characterized by containing as an active ingredient at least one kind of a fullerene, a fullerene derivative, and a composite comprising a fullerene or fullerene derivative and an organic compound with which the fullerene or derivative has been modified or clathrated. The composition is reduced in side effects, has the high ability to eliminate free radicals in the body, and further has excellent preparation stability. | 08-28-2008 |
Kenji Matsubayashi, Chiyoda-Ku JP
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20100015083 | Method of producing pvp/fullerene complex and aqueous solution thereof - An aromatic hydrocarbon solution of a fullerene or a fullerene mixture is mixed with an ethanol solution of polyvinylpyrrolidone (PVP), water is added to the mixed solution, the solvent is removed and then an aqueous solution of a complex of a fullerene or a fullerene mixture with polyvinylpyrrolidone (PVP) is obtained. Under a condition free from a halogen, a PVP/fullerene complex excellent in manifestation of fullerene properties, stability and safety and an aqueous solution thereof are obtained. | 01-21-2010 |
Kiyoka Matsubayashi, Aichi-Ken JP
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20090121526 | Head Rest Control Systems - It is one object of the present invention to provide a control for moving a head rest in response to a signal from a sensor detecting a distance between the head rest and a head of a passenger, in which even if the head of the passenger moves within a predetermined range, the head rest can be prevented from moving depending on the motion of the head of the passenger so as to remove discomfort for the passenger. | 05-14-2009 |
Kiyoka Matsubayashi, Aichi JP
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20090096468 | HEAD REST DEVICE FOR VEHICLE - When moving a head rest front portion in a full-open position direction, an ECU determines that the head rest front portion comes close to an occupant head portion on the basis of a detection result of an electrostatic capacitance sensor so as to stop the head rest front portion, and determines that the head rest front portion comes close to the occupant head portion on the basis of an absolute capacitance change with respect to a reference electrostatic capacitance value of the electrostatic capacitance sensor. Alternatively, the ECU determines that the head rest front portion comes close to the occupant head portion on the basis of a change amount of the electrostatic capacitance value of the electrostatic capacitance sensor. | 04-16-2009 |
Koji Matsubayashi, Tokyo JP
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20080270856 | SEMICONDUCTOR MEMORY DEVICE - Malfunction of burn-in test caused by a failure of setting a determined test mode due to a “line defect” of the test is prevented. A semiconductor memory device having a logic unit including a control circuit C | 10-30-2008 |
20110292710 | SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREFOR - A semiconductor device includes a first and a second ROMs; and a first control circuit having an input node and sets a first and a second addresses that are different each other to be respectively recorded in the first and second ROMs from a plurality of input addresses supplied sequentially into the input node, on the basis of a setting signal, the plurality of input addresses including the first and second addresses, wherein the first control circuit being configured to set an input address as the first address based on the setting signal, and the first control circuit further being configured to set an input address as the second address on the basis of the setting signal when the first and second addresses are different each other in a predetermined portion of bits after the first address is set to the first ROM. | 12-01-2011 |
Kou Matsubayashi, Nagoya-Shi JP
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20110033263 | Fastener and Fastening Structure - To provide a fastener having a high anti-loosening effect. A fastener has a thread structure including an upper portion of the crest and a bottom portion at the groove. The upper portion has a load flank surface inclined from the standard load flank surface toward the fastener seat while the bottom has an undercut on at least one of the groove side lower than the extension of the corresponding flank surface. | 02-10-2011 |
Masakazu Matsubayashi, Osaka-Shi JP
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20140353587 | EPITAXIAL WAFER FOR HETEROJUNCTION TYPE FIELD EFFECT TRANSISTOR - An epitaxial wafer for a heterojunction type FET includes an AlN primary layer, a stepwisely composition-graded buffer layer structure, a superlattice buffer layer structure, a GaN channel layer, and a nitride semiconductor electron supply layer, which are sequentially provided on a Si substrate, the stepwisely composition-graded buffer layer structure including a plurality of AlGaN buffer layers provided on each other such that an Al composition ratio is sequentially reduced, an uppermost layer thereof having a composition of AlxGa1—xN (012-04-2014 | |
20150069407 | GROUP III NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR - A group III nitride semiconductor multilayer substrate ( | 03-12-2015 |
Mikimasa Matsubayashi, Saitama JP
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20100187052 | SPLASH GUARD MECHANISM FOR VEHICLE - A splash guard mechanism for preventing the entry of grass, in addition to mud and gravel, in a vehicle such as a an ATV (All Terrain Vehicle). A disc-shaped splash guard mechanism covers a brake disc stored in a concave portion of a wheel to thereby prevent the entry of dirt such as mud, gravel, and grass into the brake disc. If the dirt enters the brake disc, the dirt is ejected from a first cutout portion provided on a lower portion of the splash guard mechanism. Additionally, a grass removal portion substantially triangle-shaped in plan view is provided on a lower portion of the splash guard mechanism. The grass removal portion protrudes toward a vehicle center to push grass on the ground outward and away from the first cutout portion. Since the grass is only pushed out, the grass is prevented from being cut and entering the brake disk. | 07-29-2010 |
20110241413 | WHEEL FOR VEHICLE - A wheel for a vehicle which is excellent in appearance quality, is light, and has stiffness. In the wheel for the vehicle having a rim section which has a substantially cylindrical shape and into which a tire is fit, and a disk section having a substantially disk shape and bonded to the inside of the rim section, the rim section includes a rim body part and a rim flange part, the rim body part is formed such that the thickness of a part to which the disk section is bonded is thicker than the thicknesses of the other parts, and the rim flange part is formed by bending both thin end parts of the rim body part into a hollow shape. | 10-06-2011 |
Nobuyuki Matsubayashi, Kyoto JP
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20110158899 | METHOD FOR PRODUCING HYDROGEN - An object of the present invention is to provide a method for producing hydrogen by using formic acid as a feedstock, which provides a solution to problems to be solved for the production of hydrogen on an industrial scale, such as problems of production cost, storability and transportability, and also offers improved convenience. The method for producing hydrogen of the present invention is characterized by heating an ionic liquid containing formic acid. The ionic liquid is preferably an ionic liquid in which a counteranion is a formate anion (i.e., formic acid salt). Such an ionic liquid is, as a medium for the production of hydrogen from formic acid as a feedstock, excellent in terms of reaction selectivity (high-purity hydrogen is produced) and reaction velocity. | 06-30-2011 |
20120295991 | METHOD FOR PRODUCING FORMIC ACID - An object of the present invention is providing a method for producing formic acid under mild reaction conditions and by a simple procedure. As a means for achieving the object, the method for producing formic acid of the present invention is characterized by a reaction between carbon dioxide and hydrogen in the presence of an ionic liquid. According to the present invention, it is possible to generate formic acid effectively, because the method does not require that carbon dioxide be brought into a supercritical state and because no basic substances are required to be added to the reaction system. | 11-22-2012 |
Nobuyuki Matsubayashi, Ibaraki JP
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20090258780 | POROUS INORGANIC OXIDE SUPPORT AND HYDROTREATING CATALYST OF CATALYTIC CRACKING GASOLINE USING THE SAME - A porous inorganic oxide support comprising an oxygen-containing carbonaceous material supported thereon, preferably a porous inorganic oxide support wherein the oxygen-containing carbonaceous material is a carbide of an oxygen-containing organic compound, wherein the ratio of the supported carbon amount with respect to the mass of the support for preparing the catalyst is from 0.05 to 0.2, the atomic ratio of the supported hydrogen amount with respect to the supported carbon amount is from 0.4 to 1.0, and the atomic ratio of the supported oxygen amount with respect to the supported carbon amount is from 0.1 to 0.6; and a hydrotreating catalyst of catalytic cracking gasoline which comprises the support and a catalyst containing a Group 8 metal of the periodic table, molybdenum (Mo), phosphorus and sulfur which is supported on the support are useful as a desulfurization catalyst of, for example, catalytic cracking gasoline at a hyperdesulfurized level, because of having functions of suppressing the hydrogenation activity of olefins and minimizing the decrease in the octane number even under reaction conditions with a high desulfurization ratio. | 10-15-2009 |
Ryo Matsubayashi, Hanno-Shi JP
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20120114972 | Composite Nanometal Paste of Two-Metallic-Component Type, Bonding Method, and Electronic Part - Provided is a composite nanometal paste, whose layer, when sintered in an inert gas under no load, gives a metal layer that is equal or superior in electrical conductivity and thermal conductivity to conventional lead-rich solders. The composite nanometal paste contains, as metal components, composite metal nanoparticles comprising metal cores with an average particle diameter of d (nm) and an organic coating layer formed around the circumference, and metal filler particles having an average particle diameter of D (nm), and satisfies the first relation d05-10-2012 | |
Ryo Matsubayashi, Saitama JP
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20150053753 | COMPOSITE NANOMETAL PASTE CONTAINING COPPER FILLER AND JOINING METHOD - The present invention addresses the problem of providing a composite nanometal paste which is relatively low in price and is excellent in terms of bonding characteristics, thermal conductivity, and electrical property. | 02-26-2015 |
Ryozo Matsubayashi, Hikone-Shi JP
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20120082588 | LEAD-FREE COPPER ALLOY FOR CASTING WITH EXCELLENT MECHANICAL PROPERTIES - Disclosed is a lead-free copper alloy for casting which contains 0.1-0.7% of S, 8% or less (excluding 0%) of Sn, and 6% or less (excluding 0%) of Zn, and in which a sulfide is dispersed and the average spheroidization ratio of the sulfide is 0.7 or greater. Due to this constitution, said lead-free copper alloy for casting has excellent mechanical properties such as strength, high pressure resistance and good machinability and, therefore, is useful as a starting material for faucet metal fittings, water faucet and so on, even though the alloy contains no lead which causes deterioration of water. | 04-05-2012 |
Satoru Matsubayashi, Tokyo JP
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20150015812 | DISPLAY DEVICE WITH CAPACITIVE TOUCH PANEL, CAPACITIVE TOUCH PANEL - A display device with a capacitive touch panel including a liquid crystal display having a polarizing plate disposed on a top surface thereof; and a capacitive touch panel which is disposed in front of the liquid crystal display such that a gap is provided between the touch panel and the polarizing plate, and has an outer edge which is fixed to the liquid crystal display via an adhesive layer therebetween. The touch panel includes a transparent substrate, a conductive layer which is provided on the side of the liquid crystal display of the transparent substrate, and a protective sheet which is laminated on the conductive layer via an adhesive layer, and a surface of the protective sheet opposed to the liquid crystal display is an irregular surface having minute irregularities, and the irregular surface has a surface roughness of 1.5 nm to 400 nm. | 01-15-2015 |
Satoshi Matsubayashi, Fukuoka JP
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20090189309 | Method of resin sealing permanent magnets in laminated rotor core - A laminated rotor core ( | 07-30-2009 |
Satoshi Matsubayashi, Kitakyushu-Shi JP
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20110115126 | METHOD OF RESIN SEALING PERMANENT MAGNETS IN LAMINATED ROTOR CORE - A laminated rotor core ( | 05-19-2011 |
20120305180 | METHOD OF RESIN SEALING PERMANENT MAGNETS IN LAMINATED ROTOR CORE - A laminated rotor core ( | 12-06-2012 |
20140109391 | METHOD OF MANUFACTURING LAMINATED CORE HAVING PERMANENT MAGNETS SEALED WITH RESIN - A method of manufacturing a laminated core, having a laminated core body | 04-24-2014 |
20140151926 | METHOD OF RESIN SEALING PERMANENT MAGNETS IN LAMINATED ROTOR CORE - A laminated rotor core ( | 06-05-2014 |
Shigeaki Matsubayashi, Nara JP
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20100023176 | LOAD CONTROLLING DEVICE, LOAD CONTROLLING METHOD, LOAD CONTROLLING CIRCUIT, LOAD CONTROLLING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM WHERE LOAD CONTROLLING PROGRAM IS RECORDED - Energy saving and economical efficiency of a fuel cell are enhanced. A post-control electric power amount curve generating portion | 01-28-2010 |
Shinji Matsubayashi, Miyagi JP
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20110076119 | VACUUM PROCESSING APPARATUS - An object is to provide a vacuum processing apparatus that is capable of suppressing the costs and making control easy. Provided is a vacuum processing apparatus that includes a vacuum section ( | 03-31-2011 |
20110240223 | SUBSTRATE PROCESSING SYSTEM - There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput. The substrate processing system for manufacturing an organic EL device by forming a multiple number of layers including, e.g., an organic layer on a substrate includes at least one transfer module configured to be evacuable and arranged along a straight transfer route. Within the transfer module, a multiple number of loading/unloading areas for loading/unloading the substrate with respect to a processing apparatus and at least one stocking area positioned between the loading/unloading areas are alternately arranged along the transfer route in series, and the processing apparatus is connected with a side surface of the transfer module at a position facing each of the loading/unloading areas. | 10-06-2011 |
Shinji Matsubayashi, Amagasaki-Shi JP
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20100043712 | SUBSTRATE PROCESSING APPARATUS - A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets. | 02-25-2010 |
Shinji Matsubayashi, Hyogo JP
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20090246941 | DEPOSITION APPARATUS, DEPOSITION SYSTEM AND DEPOSITION METHOD - A deposition system is provided to avoid cross contamination in each layer formed in a manufacturing process of organic electroluminescent device, etc., and also provided to reduce footprint. Provided is an apparatus | 10-01-2009 |
Shizuyasu Matsubayashi, Toyota-Shi Aichi-Ken JP
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20140151872 | SEMICONDUCTOR MODULE - A semiconductor module includes semiconductor device, at least one cooler, at least one fastening member. The semiconductor device has a flat shape. The at least one cooler is arranged adjacent to the semiconductor device. The at least one fastening member has a pressure-contact part that is configured to apply a pressure to the at least one cooler. Furthermore, the at least one fastening member fastens a layered body including the semiconductor device and the at least one cooler in a layer direction of the layered body. A dent configured to accommodate the pressure-contact part is provided in the at least one cooler. | 06-05-2014 |
Shuichi Matsubayashi, Tsurugashima-City JP
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20090194084 | IGNITION COIL - An ignition coil is equipped with a sparkplug of an engine. The ignition coil includes a coil portion, a tower portion, and a plug cap. The coil portion includes a coil case accommodating a primary and secondary coils being coaxial with each other. The coil portion has an end connected with the plug cap via the tower portion. The plug cap is press-fitted with the sparkplug. The coil case has an outer periphery from which a flange portion projects radially outward in a flange-projecting direction. The tower cylinder portion has a tower axis substantially in parallel with a coil axis of the primary and secondary coils. The tower axis is offset from the coil axis in a tower-offset direction. The tower-offset direction is substantially the same as the flange-projecting direction. | 08-06-2009 |
Shuichi Matsubayashi, Tsurugashima-Shi JP
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20080264396 | Ignition coil - An ignition coil of a dual ignition type that can prevent outputs from becoming unbalanced due to a difference in floating capacitance on wiring that connects secondary output terminals and ignition plugs together, thus realizing balanced outputs. A coil assembly housed in a housing as a coil case has a primary coil and secondary coils disposed concentrically with the primary coil. The secondary coils are comprised of two coils wound in opposite directions with the center of winding width being a boundary. The center of the winding width of the primary coil is shifted from the center of the winding width of the secondary coils by a predetermined width so as to balance outputs from the two secondary coils. A casting material is filled into a gap between the housing and the coil assembly and gaps which the coil assembly has. | 10-30-2008 |
20080264397 | Ignition coil - A high-strength ignition coil that can reduce stress produced in a coil case and prevent a casting material from being cracked when the ignition coil is mounted on an engine block. A coil case has a mounting flange on an outer surface thereof. A coil assembly is housed in the coil case. A casting material is filled into a gap between the coil case and the coil assembly and gaps which the coil assembly has. A plurality of first guide ribs are provided on an inner wall surface of the coil case or an outer surface of the coil assembly, for positioning the outer surface of the coil assembly with respect to the inner wall surface of the coil case. A limited area in which there is no first guide rib is provided on the inner wall surface of the coil case which faces the mounting flange, or the outer surface of the coil assembly which faces the mounting flange via the inner wall surface of the coil case. | 10-30-2008 |
20080266040 | Ignition coil - A high-strength ignition coil that can prevent distortion arising from pin marks formed on a surface of a core and makes it less likely for insulating resin to be cracked. The coil assembly is housed in a coil case. A casting material is filled into a gap between the coil case and the coil assembly and gaps which the coil assembly has. The coil assembly is comprised of a coil pair including a cylindrical primary coil and a secondary coil disposed concentrically with the primary coil, and a core. The core is fitted into a central space of the coil pair and forms a magnetic path. The core is coated with mold resin. Concave portions of pin marks formed on a mold resin coating by removal of core fixing pins when the mold resin coating is formed are filled with mold resin. | 10-30-2008 |
Sou Matsubayashi, Koshigaya-Shi JP
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20090021894 | CONDUCTIVE POLYMER SOLUTION, CONDUCTIVE COATING, CONDENSER AND PROCESS FOR MANUFACTURING CONDENSER - The object of the present invention is to provide a condenser that exhibits excellent conductivity of the solid electrolyte layer, and has a low ESR, a high degree of heat resistance, and a high withstand voltage. A condenser of the present invention includes an anode composed of a valve metal, a dielectric layer formed by oxidation of the surface of the anode, and a solid electrolyte layer formed on the surface of the dielectric layer, wherein the solid electrolyte layer contains a π-conjugated conductive polymer, a polyanion, and an amide compound. | 01-22-2009 |
20090244027 | TRANSPARENT CONDUCTIVE SHEET FOR TOUCH PANEL, METHOD FOR MANUFACTURING SAME AND TOUCH PANEL - A transparent conductive sheet for a touch panel that has a surface resistivity of not more than 1,000Ω, a total light transmittance of not less than 80%, and a haze of not more than 5%, and exhibits excellent levels of water resistance and adhesion between a transparent substrate and a transparent conductive layer. The transparent conductive sheet for a touch panel of the present invention includes a transparent substrate and a transparent conductive layer formed on top of the transparent substrate, wherein the transparent conductive layer contains a π-conjugated conductive polymer, a polyanion and an ester compound or specific polymerizable compound. The transparent conductive layer may also include conductivity improvers, dopants, other resin components and/or additives as required. A conductivity improver is preferably included to improve the conductivity. | 10-01-2009 |
20130294013 | CONDUCTIVE POLYMER SOLUTION, CONDUCTIVE COATING, CONDENSER AND PROCESS FOR MANUFACTURING CONDENSER - The object of the present invention is to provide a condenser that exhibits excellent conductivity of the solid electrolyte layer, and has a low ESR, a high degree of heat resistance, and a high withstand voltage. A condenser of the present invention includes an anode composed of a valve metal, a dielectric layer formed by oxidation of the surface of the anode, and a solid electrolyte layer formed on the surface of the dielectric layer, wherein the solid electrolyte layer contains a π-conjugated conductive polymer, a polyanion, and an amide compound. | 11-07-2013 |
Sou Matsubayashi, Saitama-Shi JP
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20100294997 | METHOD FOR PRODUCING CONDUCTIVE POLYMER SOLUTION - There is provided a method for producing a conductive polymer solution comprising: a freeze-drying step in which an aqueous conductive polymer solution containing a complex that includes a π-conjugated conductive polymer and a polyanion is freeze dried to thereby obtain a solid complex; and a dispersion step in which an organic solvent having a water content of 4% by mass or less and an amine compound are mixed to the solid complex, followed by a dispersion treatment. | 11-25-2010 |
20140084225 | ANTISTATIC RELEASE AGENT, ANTISTATIC RELEASE COATED FILM AND ANTISTATIC RELEASE BASE MATERIAL - The present invention relates to an antistatic release agent comprising an aqueous solution of an electrically conductive polymer complex composed of a π-conjugated electrically conductive polymer and a polyanion having an anionic group in a molecule thereof, an alkaline compound, a silicone emulsion and a dispersion medium, wherein the alkaline compound is at least one type of compound selected from the group consisting of an inorganic alkali, as amine compound and a nitrogen-containing aromatic cyclic compound, the content of the alkaline compound in the antistatic release agent is 0.7 times or more relative to the number of moles of the neutralization equivalent of the electrically conductive polymer complex, and the pH of the antistatic release agent at 25° C. is 10 or lower. The present invention can provide an antistatic release agent having superior storage stability for forming an antistatic release coated film. | 03-27-2014 |
Tadashi Matsubayashi, Ibaraki JP
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20090117668 | Immune Agglutination Reagent Kit and Method of Measuring Antigen - In cases of poor reaction efficiency with the antibody due to inadequate number of epitopes or steric hindrance caused by epitopes being close to each other, this invention provides a direct method of efficiently measuring antigen in a given specimen without the need of pretreating it. Two types of monoclonal antibodies that recognize different epitopes are individually sensitized on separate latex. The specimen and one latex sensitized monoclonal antibody reagent are reacted to produce a reaction solution which is then reacted with the other latex sensitized monoclonal antibody reagent. The antigen can thus be directly measured in an efficient and highly sensitive way without pretreating it. | 05-07-2009 |
Tadataka Matsubayashi, Tokyo JP
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20140317137 | LOG MANAGEMENT COMPUTER AND LOG MANAGEMENT METHOD - The purpose of the invention is to provide a log management computer that shortens log search time while reducing log storage volume. The log management computer manages a log acquired from a log generating system that generates the log, which is an operation record. The log management computer is characterized by: extracting from a log message contained in the log, both a common portion that is common with another log message and a different portion that is different from another log message; storing the extracted common portion in common portion information of a storage area; storing the extracted different portion in different portion information of the storage area; and if a search request containing a search condition is received, searching for a log message that matches the search condition. | 10-23-2014 |
Takaaki Matsubayashi, Ora-Gun JP
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20100143815 | FUEL CELL - A fuel cell system which provides stable cell outputs at startup. The fuel cell system comprises: a fuel cell stack including a laminate formed by combining a membrane electrode assembly composed of an electrolyte membrane, an anode jointed to one side of the electrolyte membrane, and a cathode joined to the other side of the electrolyte membrane, with a fuel channel plate having a fuel channel for supplying a fuel to the anode, an oxidant channel plate having an oxidant channel for supplying an oxidant to the cathode, and a coolant channel plate having a coolant channel for a coolant to flow through; piping and a circulation pump necessary for cooling the coolant exhausted from the fuel cell stack before putting the coolant into the fuel cell stack for circulation; a fuel humidifier which humidifies the fuel by heat exchange with the coolant; an air humidifier which humidifies the air by heat exchange with the coolant; and a control unit which continues the circulation of the coolant in a system stopping process until a predetermined cooling stop condition holds, and stops power generation of the fuel cell when the predetermined cooling stop condition holds. | 06-10-2010 |
Tetsuya Matsubayashi, Ohbu-Shi JP
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20090224024 | Friction welding methods and friction welding apparatuses - One aspect of the present invention can include a friction welding method having a friction step for generating a friction heat by pressing the pair of works while relatively rotating the pair of works, and an upset step started before generating an approach margin at the pair of works at the friction step, restricting rotation of the pair of works relative to each other and applying an upset pressure between the pair of works. | 09-10-2009 |
Tomoya Matsubayashi, Kanagawa JP
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20080198055 | Pipeline type analog-digital converter having redundant comparator - A pipeline type analog-digital converter includes a first to an N-th (N is an integer of not less than 2) stages ( | 08-21-2008 |
Toshiaki Matsubayashi, Chiba-Ken JP
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20110187844 | IMAGE IRRADIATION SYSTEM AND IMAGE IRRADIATION METHOD - To provide an image irradiation system and an image irradiation method which can make an image information in an outdoor side of a vehicle be recognized by a driver precisely without widely moving a view point of the driver. | 08-04-2011 |
Toshiaki Matsubayashi, Ichikawa-Shi JP
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20100066832 | HEAD UP DISPLAY - According to one embodiment of a head up display according to the present invention can improve visibility by changing a position of information projected onto a combiner based on information captured by a front camera and a driver camera. | 03-18-2010 |
20100066925 | Head Up Display - According to one embodiment of a head up display according to an embodiment of the present invention includes a display information generating module which generates information that should be projected, a combiner which guides the information that is generated by the display information generating module and should be displayed to a predetermined position, a light adjustment control module which changes a transmitted light amount of the combiner based on brightness of a background and front image detecting module which detects brightness of the background to set the transmitted light amount of the combiner by using the light adjustment control module. | 03-18-2010 |
Yasuko Matsubayashi, Koga-Shi JP
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20090295014 | SPINNING APPARATUS, AND APPARATUS AND PROCESS FOR MANUFACTURING NONWOVEN FABRIC - A spinning apparatus comprising one or more exits for extruding liquid, and an exit for ejecting gas, located upstream of the exits for extruding liquid, wherein the apparatus comprises a columnar hollow for liquid, in which the exit for extruding liquid forms one end of the columnar hollow; the apparatus comprises a columnar hollow for gas having the exit for ejecting gas; a virtual column for liquid, extended from the columnar hollow for liquid, is adjacent to a virtual column for gas, extended from the columnar hollow for gas; the central axis of the columnar hollow for liquid is parallel to the central axis of the columnar hollow for gas; and there exists only one straight line having the shortest distance between an outer boundary of the cross-section of the columnar hollow for gas and an outer boundary of the cross-section of the columnar hollow for liquid, is disclosed. | 12-03-2009 |
Yasuko Matsubayashi, Ibaraki JP
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20110130063 | SPINNING APPARATUS, APPARATUS AND PROCESS FOR MANUFACTURING NONWOVEN FABRIC, AND NONWOVEN FABRIC - Provided are a spinning apparatus capable of stably spinning fibers having a small fiber diameter with a high productivity, an apparatus comprising the same for manufacturing a nonwoven fabric, a process for manufacturing a nonwoven fabric using the nonwoven fabric manufacturing apparatus, and a nonwoven fabric produced by the process. | 06-02-2011 |
Yoko Matsubayashi, Sakai-Shi JP
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20100244061 | LED illumination device - An LED illumination device includes: a substrate; one or more red LED chips arranged on the substrate; a plurality of blue LED chips arranged on the substrate; and a plurality of third-color LED chips arranged on the substrate. Respective centers of the red LED chips are arranged on a circumference of a first circle having as its center a point on the substrate, respective centers of the blue LED chips being arranged on the circumference of a second circle concentric with and greater than the first circle, respective centers of the third-color LED chips being arranged in a region between the first circle and the second circle. | 09-30-2010 |
20110037084 | LENS-MOUNTED LIGHT EMITTING UNIT - In a lens-mounted light emitting unit comprising LED elements of multiple light colors, narrow-angle light distribution is enabled, and color mixing properties are improved. The lens-mounted light emitting unit | 02-17-2011 |
Yuki Matsubayashi, Kanagawa JP
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20140044022 | HIGH-FREQUENCY CIRCUIT AND COMMUNICATION DEVICE - A high-frequency circuit includes: first duplexers, each including a first transmit filter having a first transmit band, a first receive filter having a first receive band, and a first common terminal to which first ends of the first transmit filter and the first receive filter are commonly connected; a first switch that selects and connects one of the first common terminals to a first antenna; an LPF or BPF that is connected between the first antenna and the first switch, and passes a signal in the first transmit band and the first receive band; and a second duplexer including: a second transmit filter having a second transmit band, a second receive filter having a second receive band, and a second common terminal that is connected to a second antenna and to which first ends of the second transmit filter and the second receive filter are commonly connected. | 02-13-2014 |
20140203887 | MODULE - A module includes: a diplexer that includes a first terminal, a second terminal, and a common terminal coupled to an antenna; a first switch that is coupled to the first terminal, includes first ports, and selects, from the first ports, and connects one port to the diplexer; a first duplexer that is coupled to at least one of the first ports; a second duplexer that is coupled to the second terminal and has a passband different from a passband of the first duplexer; and a first impedance portion that is coupled to another port of the first ports. | 07-24-2014 |
Yumiko Matsubayashi, Warabi-Shi JP
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20100276073 | Surface Substrate Film for Motor Vehicle Brade Disc Antirust Film - According to the present invention, a film having a tensile modulus of elasticity of 220 MPa or more is adopted as a surface substrate film for a motor vehicle brake disc antirust film. If needed, the surface substrate film is made to further contain an ultraviolet absorber in a proportion of 0.01 to 20 parts by mass relative to 100 parts by mass of the surface substrate film in such a way that the spectral transmittance of the surface substrate film in a wavelength region from 200 to 380 nm falls within a range from 0 to 20%. The present invention can provide a surface substrate film for a motor vehicle brake disc antirust film which surface substrate film is hardly peeled off when adhered onto a motor vehicle wheel. | 11-04-2010 |
Yumiko Matsubayashi, Saitama JP
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20090117361 | Masking Tape - A masking tape | 05-07-2009 |
20120302123 | LUMINESCENT COMPOSITION AND INORGANIC ELECTROLUMINESCENT SHEET USING THE SAME - A luminescent composition can efficiently provide an inorganic electroluminescent sheet with a high productivity at low costs. The composition has a desired light transmittance (transparency) when no electric voltage is applied to it. The composition includes an inorganic electroluminescent substance and a binder resin. A content of the inorganic electroluminescent substance is at least 0.5 part and less than 100 parts by mass on the basis of 100 parts by mass of the binder resin. The inorganic electroluminescent sheet includes a first transparent substrate; a first transparent electrode; the inorganic electroluminescent layer of the luminescent composition; a first transparent electrode; and a second transparent substrate, successively laminated in this order. The inorganic electroluminescent sheet has a light transmittance of 60% or more, measured at a wavelength of 550 nm under a non-light emitting condition. | 11-29-2012 |
Yumiko Matsubayashi, Tokyo JP
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20110068681 | LUMINESCENT COMPOSITION AND INORGANIC ELECTROLUMINESCENT SHEET USING THE SAME - The present invention provides a luminescent composition which is capable of providing an inorganic electroluminescent sheet with a high productivity at low costs in an efficient manner, and has a desired light transmittance (transparency) when no electric voltage is applied thereto, an inorganic electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the inorganic electroluminescent sheet. The present invention relates to a luminescent composition including an inorganic electroluminescent substance and a binder resin, wherein a content of the inorganic electroluminescent substance is not less than 0.5 part by mass and less than 100 parts by mass on the basis of 100 parts by mass of the binder resin; and an inorganic electroluminescent sheet including at least a first transparent substrate, a first transparent electrode, an inorganic electroluminescent layer, a first transparent electrode and a second transparent substrate which are successively laminated in this order, wherein the inorganic electroluminescent layer is formed from the above luminescent composition, and the inorganic electroluminescent sheet has a light transmittance of 60% or more as measured at a wavelength of 550 nm under a non-light emitting condition. | 03-24-2011 |
20120146485 | LIGHT EMITTING SHEET AND MANUFACTURING METHOD THEREOF - A light-emitting sheet which does not cause failures such as a short circuit without causing dielectric breakdown at the end of element at applying a voltage and which is able to realize stable driving, and an efficient method for producing the light-emitting sheet, are provided. Specifically, a light-emitting sheet having a first electrode, a second electrode, and a light-emitting layer disposed between the first and the second electrodes, wherein a short circuit preventing member composed of an insulator is arranged on the periphery of the light-emitting layer in such a way that a part of the member is projected from the light-emitting layer, and an efficient method for producing the light-emitting sheet, are provided. | 06-14-2012 |
20120146490 | LIGHT EMITTING SHEET - A light-emitting sheet which does not cause failures such as a short circuit without causing dielectric breakdown at the end of element at applying a voltage and which is able to realize stable driving is provided. Specifically, A light-emitting sheet comprising a first electrode, a second electrode, and a light-emitting layer disposed between the first and the second electrodes, wherein the first electrode and/or the second electrode disposed on and under the periphery of the light-emitting layer are cut to form a non-conductive portion being electrically disconnected with a circuit for applying a voltage to the light-emitting sheet, and as seen from a vertical direction to the plane of the light-emitting sheet, the non-conductive portion formed from the first electrode or the non-conductive portion formed from the second electrode surrounds the light-emitting layer, or the non-conductive portion formed from the first electrode and the non-conductive portion formed from the second electrode are apparently connected to each other and surrounds the light-emitting layer. | 06-14-2012 |