Patent application number | Description | Published |
20100245820 | Mass Sensor - A mass sensor is provided for determining the mass of small objects. The mass sensor has a plurality of nanostructures attached to a substrate. The nanostructures and the substrate are irradiated with an electromagnetic wave to determine a first mechanical-electromagnetic resonant frequency of the mass sensor. After a particle is attached to the nanostructures, the substrate and the nanostructures to which the particle is attached are irradiated with an electromagnetic wave to determine a second mechanical-electromagnetic resonant frequency of the mass sensor. A mass of the particle is determined based on a difference between the first and second mechanical-electromagnetic resonant frequencies. | 09-30-2010 |
20100295635 | Terahertz Resonator - A tunable terahertz resonator includes a semiconductor substrate and a metal layer contacting a surface of the semiconductor substrate. A depletion layer is formed in the semiconductor substrate near an interface between the metal layer and the semiconductor substrate. A chiral nanostructure is coupled to the substrate or the metal layer, the chiral nanostructure including a conducting or semiconducting material and having an inductance. A bias circuit applies a bias voltage across the metal layer and the semiconductor substrate to control a capacitance of a tunable capacitor that includes the depletion layer. The chiral nanostructure and the tunable capacitor form a tunable resonant circuit. The tunable terahertz resonator can be used in a terahertz radiation emitter or receiver. | 11-25-2010 |
20120081943 | Polarization-Coupled Ferroelectric Unipolar Junction Memory And Energy Storage Device - A memory device is provided. The memory device includes a plurality of memory cells and a controller to write data to and read data from the memory cells. Each memory cell includes a first semiconductor material having a spontaneous polarization, a resistive ferroelectric material having a switchable spontaneous polarization, and a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials. The memory device can be configured to store energy that can be released by applying a voltage pulse to the memory device. | 04-05-2012 |
20120206724 | Terahertz-infrared ellipsometer system, and method of use - The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including:
| 08-16-2012 |
20120261580 | Terahertz-infrared ellipsometer system, and method of use - The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including:
| 10-18-2012 |
20140027644 | Terahertz-infrared ellipsometer system, and method of use - The present invention relates to ellipsometer and polarimeter systems, and more particularly is an ellipsometer or polarimeter or the like system which operates in a frequency range between 300 GHz or lower and extending to higher than at least 1 Tera-hertz (THz), and preferably through the Infra-red (IR) range up to, and higher than 100 THz, including:
| 01-30-2014 |
20140106980 | OPTICAL SENSING AND SEPARATION BASED ON ORDERED THREE-DIMENSIONAL NANOSTRUCTURED SURFACES - A sensor having a substrate is provided in which structures are disposed on a surface of the substrate. The structures can be, e.g., nanostructures. Polarized light is directed toward the sensor, and birefringence of the structures with respect to the light is measured. Target particles that interact with the structures are detected based on changes in the measured birefringence. | 04-17-2014 |
20150153230 | TERAHERTZ-INFRARED ELLIPSOMETER SYSTEM, AND METHOD OF USE - A dual scanning and FTIR system for application in the Terahertz and broadband blackbody frequency range including sources for providing Thz and broadband blackbody range and electromagnetic radiation, at least one detector of electromagnetic radiation in the THZ and broadband blackbody ranges, and at least one rotating element between the source and detector. | 06-04-2015 |