Matero
Jari Matero, Masala FI
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20100295561 | METHOD AND ARRANGEMENT FOR INDICATING CORRECT INSTALLATION OF PLUG-IN UNIT OF TELECOMMUNICATIONS DEVICE - An arrangement for indicating correct installation of a plug-in unit ( | 11-25-2010 |
Jorma Pertti Matero, Oulu FI
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20130170589 | Filter Offset Compensation - Problems arising from a pre-emphasis filter, particularly an infinite-impulse-response filter, in a signal modulator are solved by detecting sequences of the same bit or symbol in a modulation signal and compensating the corresponding d.c. offset in the signal generated by the pre-emphasis filter without real-time feedback. The amount of offset compensation can be defined during design of the modulator or adjusted or calibrated during production. It is not necessary to change the transfer function of the pre-emphasis filter, but only to correct the d.c. offset of the filter output signal. | 07-04-2013 |
Juha Matero, Fleet GB
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20130246861 | METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR USER INPUT INTERPRETATION AND INPUT ERROR MITIGATION - Provided herein are a method, apparatus and computer program product for interpreting user input and mitigating erroneous inputs on a device. In particular, methods may include receiving an indication of a first touch event, determining, by a touch mediation function, if the first touch event is an erroneous touch event, causing the first touch event to be sent to an application in response to the touch mediation function determining that the touch event is not erroneous; and causing the first touch event to not be sent to the application in response to the touch mediation function determining that the first touch event is erroneous. The first touch event may occur proximate a first capture area for the user interface and the method may further include causing the first capture area for the user interface to be adjusted in response to the first touch event. | 09-19-2013 |
Juha Petri Matero, Hampshire GB
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20080309251 | DEVICE WITH IMPROVED DISPLAY ILLUMINATION AND METHOD THEREFORE - A device having a display, an illuminator configured to illuminate the display and a multi-way input key configured to control the illuminator upon activation. The illuminator also has a power output, the output level being arranged to be regulated upon activation of the multi-way input key proportional to a physical movement activating the multi-way input key. | 12-18-2008 |
Raija Matero, Helsinki FI
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20130309417 | METHODS FOR FORMING MULTI-COMPONENT THIN FILMS - The present application relates generally to atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A-B-O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed. | 11-21-2013 |
Raija H. Matero, Helsinki FI
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20130095664 | ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS - Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl | 04-18-2013 |
20140065841 | ATOMIC LAYER DEPOSITION OF GeO2 - Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following: contacting the substrate with a vapor phase tetravalent Ge precursor such that at most a molecular monolayer of the Ge precursor is formed on the substrate surface; removing excess Ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the Ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed. | 03-06-2014 |
20150179443 | CYCLICAL DEPOSITION OF GERMANIUM - In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed. | 06-25-2015 |
20150217330 | SELECTIVE DEPOSITION OF METALS, METAL OXIDES, AND DIELECTRICS - Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material. | 08-06-2015 |
20150249005 | ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS - Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl | 09-03-2015 |
Raija H. Matero, Vantaa FI
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20090209081 | Silicon Dioxide Thin Films by ALD - Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained. | 08-20-2009 |
Raija H. Matero, Almere NL
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20150299848 | DUAL SELECTIVE DEPOSITION - Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials. | 10-22-2015 |