Patent application number | Description | Published |
20090238992 | POLYCRYSTALLINE SILICON REACTOR - A polycrystalline silicon reactor | 09-24-2009 |
20090241838 | Polycrystalline silicon manufacturing apparatus - A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas. | 10-01-2009 |
20090246113 | Polymer inactivation method for polycrystalline silicon manufacturing device - A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied. | 10-01-2009 |
20090297708 | APPARATUS FOR PRODUCING TRICHLOROSILANE, AND METHOD FOR PRODUCING TRICHLOROSILANE - This apparatus for producing trichlorosilane, includes a reactor provided with gas inlets and gas outlets, a plurality of silicon seed rods held in the reactor, a heating apparatus that is provided in the reactor and heats the silicon seed rods, and a raw material gas supply system that is connected to the gas inlets and capable of selecting and supplying one of a first raw material gas for depositing polycrystalline silicon which contains trichlorosilane and hydrogen gas and a second raw material gas for producing trichlorosilane which contains silicon tetrachloride and hydrogen gas, wherein when the raw material gas supply system supplies the second raw material gas into the reactor, the silicon tetrachloride and hydrogen gas are reacted to produce a reaction product gas containing trichlorosilane. | 12-03-2009 |
20090314207 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON - An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other. | 12-24-2009 |
20100058988 | MANUFACTURING APPARATUS OF POLYCRYSTALLINE SILICON - A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed. | 03-11-2010 |
20100229796 | Manufacturing apparatus of polycrystalline silicon - An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes. | 09-16-2010 |
Patent application number | Description | Published |
20090136408 | Polycrystalline silicon manufacturing apparatus and manufacturing method - A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports | 05-28-2009 |
20090136666 | Method for manufacturing polycrystalline silicon - A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition. | 05-28-2009 |
20090165704 | Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon - A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod. | 07-02-2009 |
20090188532 | Reactor cleaning apparatus - In a reactor cleaning apparatus | 07-30-2009 |
20100160591 | Method for producing polycrystalline silicon, and facility for producing polycrystalline silicon - A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiH | 06-24-2010 |
20110232694 | Reactor cleaning apparatus - In a reactor cleaning apparatus | 09-29-2011 |
20130224401 | SILICON SEED ROD ASSEMBLY OF POLYCRYSTALLINE SILICON, METHOD OF FORMING THE SAME, POLYCRYSTALLINE SILICON PRODUCING APPARATUS, AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON - A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod. | 08-29-2013 |