Patent application number | Description | Published |
20080239865 | SEMICONDUCTOR MEMORY DEVICE - The semiconductor memory device according to the invention is provided with a first delay circuit block that generates a timing signal of a circuit block to be operated in column cycle time determined by an external input command cycle and a second delay circuit block the whole delay of which is controlled to be a difference between access time determined by an external clock and the latency and column cycle time. These delay circuit blocks are controlled so that the delay of each delay circuit is a suitable value in accordance with column latency and an operating frequency, and each delay is controlled corresponding to dispersion in a process and operating voltage and a change of operating temperature. | 10-02-2008 |
20080273413 | SEMICONDUCTOR DEVICE - A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode. | 11-06-2008 |
20090002048 | Reference voltage generating circuit - Disclosed is a reference voltage generating circuit which includes resistors R | 01-01-2009 |
20090302908 | OSCILLATOR AND A TUNING METHOD OF A LOOP BANDWIDTH OF A PHASE-LOCKED-LOOP - There is provided an oscillator including: a reference signal generator that generates a reference signal having a reference frequency; a phase comparator that outputs a voltage in accordance with a phase difference between the reference signal and a feedback signal; a loop filter that receives a voltage output from the phase comparator, and gain-adjusts a voltage output from the phase comparator by means of an external control signal; a voltage controlled oscillator that oscillates an output signal at a frequency in accordance with an adjusted signal having been gain-adjusted by the loop filter; and a frequency divider that feeds back a frequency-divided signal resulting from frequency-dividing the output signal, to the phase comparator as the feedback signal. | 12-10-2009 |
20100309706 | Load reduced memory module and memory system including the same - A memory module includes a plurality of memory chips, a plurality of data register buffers, and a command/address/control register buffer mounted on a module PCB. The data register buffers perform data transfers with the memory chips. The command/address/control register buffer performs buffering of a command/address/control signal and generates a control signal. The buffered command/address/control signal is supplied to the memory chips, and the control signal is supplied to the data register buffers. According to the present invention, because line lengths between the data register buffers and the memory chips are shortened, it is possible to realize a considerably high data transfer rate. | 12-09-2010 |
20100312925 | Load reduced memory module - A memory module includes a plurality of data connectors provided along a long side of a module substrate, a plurality of memory chips and a plurality of data register buffers mounted on the module substrate, a data line that connects the data connectors and the data register buffers, and data lines that connect the data register buffers and the memory chips. Each of the data register buffers and a plurality of data connectors and a plurality of memory chips corresponding to the data register buffer are arranged side by side in a direction of a short side of the module substrate. According to the present invention, because each line length of the data lines is considerably shortened, it is possible to realize a considerably high data transfer rate. | 12-09-2010 |
20100312956 | Load reduced memory module - A memory module includes a plurality of memory chips and a plurality of data register buffers mounted on the module substrate. At least two memory chips are allocated to each of the data register buffers. Each of the data register buffers includes M input/output terminals (M is a positive integer equal to or larger than 1) that are connected to the data connectors via a first data line and N input/output terminals (N is a positive integer equal to or larger than 2M) that are connected to corresponding memory chips via second and third data lines, so that the number of the second and third data lines is N/M times the number of the first data lines. According to the present invention, because the load capacities of the second and third data lines are reduced by a considerable amount, it is possible to realize a considerably high data transfer rate. | 12-09-2010 |
20120250264 | MEMORY MODULE HAVING MEMORY CHIP AND REGISTER BUFFER - Disclosed herein is a memory module that includes a register buffer and a memory chip each mounted on a module substrate. Each of the command address output terminals belonging to the first group provided on the register buffer is connected to an associated one of the command address input terminals belonging to the first group provided on the memory chip through associated ones of the plurality of contact plugs and the first wiring layer. Each of the command address output terminals belonging to the second group provided on the register buffer is connected to an associated one of the command address input terminals belonging to the second group provided on the memory chip through associated ones of the plurality of contact plugs and the second wiring layer. | 10-04-2012 |
20130215659 | LOAD REDUCED MEMORY MODULE AND MEMORY SYSTEM INCLUDING THE SAME - A device includes a printed circuit board, a clock connector provided on the printed circuit board and configured to be supplied with a first clock signal, a first register buffer provided on the printed circuit board, coupled to the clock connector and, including a first clock generator that produces a second clock signal in response to the first clock signal, a plurality of data connectors, provided on the printed circuit board, a plurality of memory chips each provided on the printed circuit board and including a first data terminal, and a plurality of second register buffers each provided on the printed circuit board independently of the first register buffer. | 08-22-2013 |