Patent application number | Description | Published |
20090197376 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 08-06-2009 |
20090203228 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD - A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable. | 08-13-2009 |
20090308840 | PLASMA CLEANING METHOD AND PLASMA CVD METHOD - A plasma cleaning method is performed in a plasma CVD apparatus for depositing a silicon nitride film on a surface of a target substrate, and includes a stage (S | 12-17-2009 |
20100283097 | MOS SEMICONDUCTOR MEMORY DEVICE - The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insulating film | 11-11-2010 |
20110086517 | PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING SILICON NITRIDE FILM LAMINATE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV. | 04-14-2011 |
20110189862 | SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a process of forming a silicon oxynitride film having concentration of hydrogen atoms below or equal to 9.9×10 | 08-04-2011 |
20110206590 | SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND PLASMA CVD APPARATUS - To form a dense high-quality silicon oxide film (SiO | 08-25-2011 |
Patent application number | Description | Published |
20110254078 | METHOD FOR DEPOSITING SILICON NITRIDE FILM, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a method for depositing a silicon nitride film in a plasma CVD device which introduces microwaves into a process chamber by a planar antenna having a plurality of apertures, and the method including setting the pressure in the process chamber within a range from 10 Pa to 133.3 Pa and performing plasma CVD by using film formation gas including a silicon containing compound gas and a nitrogen gas while applying an RF bias to the wafer by supplying high-frequency power with an output density within a range from 0.009 W/cm | 10-20-2011 |
20120126376 | SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×10 | 05-24-2012 |
20120153442 | SILICON NITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a process of forming a silicon nitride film having concentration of hydrogen atoms below or equal to 9.9×10 | 06-21-2012 |
20120178268 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 07-12-2012 |
20130072033 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 03-21-2013 |
Patent application number | Description | Published |
20110319336 | SELECTIVE ANTICANCER CHIMERIC PEPTIDE - It is an object of the present invention to provide a substance usable as an anticancer agent or DDS, which has intracellular stability, which is capable of evading side effects from functional disorder with respect to normal cells, or which has instantaneous effect. The inventors developed a novel chimeric peptide targeting cancer cells which overexpress EGFR or the like using a binding peptide such as a peptide sequence binding to EGFR, and a lytic peptide sequence, thereby solving such an object. Particularly, by using a chimeric peptide including an EGF receptor-binding peptide or the like and a cytotoxic peptide, this object was solved. | 12-29-2011 |
20120003299 | NOVEL HSP90-TARGETED ANTI-CANCER CHIMERIC PEPTIDE - Disclosed is a substance which is not accumulated stably in cells, does not cause the dysfunction of normal cells, and so on, and therefore can be used as an anti-cancer agent or in a DDS without having any adverse side effects. It is found that Hsp90 alone cannot exhibit its function as a chaperone in assisting the refolding of a protein such as survivin, but can exhibit this function when Hop (which is one of the partner proteins of Hsp90) binds to Hsp90. Thus, specifically disclosed herein is a chimeric peptide comprising of an Hsp90 TPR domain binding peptide and a cell-penetrating peptide. | 01-05-2012 |
20130274200 | SELECTIVE ANTICANCER CHIMERIC PEPTIDE - It is an object of the present invention to provide a substance usable as an anticancer agent or DDS, which has intracellular stability, which is capable of evading side effects from functional disorder with respect to normal cells, or which has instantaneous effect. The inventors developed a novel chimeric peptide targeting cancer cells which overexpress EGFR or the like using a binding peptide such as a peptide sequence binding to EGFR, and a lytic peptide sequence, thereby solving such an object. Particularly, by using a chimeric peptide including an EGF receptor-binding peptide or the like and a cytotoxic peptide, this object was solved. | 10-17-2013 |
20130274201 | SELECTIVE ANTICANCER CHIMERIC PEPTIDE - It is an object of the present invention to provide a substance usable as an anticancer agent or DDS, which has intracellular stability, which is capable of evading side effects from functional disorder with respect to normal cells, or which has instantaneous effect. The inventors developed a novel chimeric peptide targeting cancer cells which overexpress EGFR or the like using a binding peptide such as a peptide sequence binding to EGFR, and a lytic peptide sequence, thereby solving such an object. Particularly, by using a chimeric peptide including an EGF receptor-binding peptide or the like and a cytotoxic peptide, this object was solved. | 10-17-2013 |