Patent application number | Description | Published |
20090050881 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1. | 02-26-2009 |
20090054641 | ORGANIC SEMICONDUCTING MATERIAL, AND FILM, ORGANIC ELECTRONIC DEVICE AND INFRARED DYE COMPOSITION EACH INCLUDING SAID MATERIAL - An organic semiconducting material comprises a naphthalocyanine derivative represented by formula (1); | 02-26-2009 |
20090072122 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor | 03-19-2009 |
20090076322 | CAPSULE ENDOSCOPE - A capsule endoscope includes at least an imaging device that images a location of a subject and an optical system that focuses the location at the imaging device. The imaging device has plural pixel portions that are arranged in in-plane directions on a substrate. The pixel portion has a photoelectric conversion portion that includes a lower electrode, a photoelectric conversion layer formed over the lower electrode, and an upper electrode formed over the photoelectric conversion layer, and a signal output portion that outputs a signal based on a charge generated at the photoelectric conversion layer through a field effect thin film transistor. The field effect thin film transistor includes at least a gate electrode, a gate insulation film, a semiconductor layer, a source electrode and a drain electrode. The photoelectric conversion portion and the signal output portion are superposed in plan view. | 03-19-2009 |
20090101953 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes a photoelectric conversion portion which includes: a pair of electrodes including an electron-collecting electrode and a hole-collecting electrode; and a photoelectric conversion layer between the pair of electrodes. At least part of the photoelectric conversion layer includes a mixture layer of a p-type organic semiconductor and a fullerene, and a volume ratio of the fullerene to the p-type organic semiconductor in the photoelectric conversion layer is such that the volume ratio on a side of the electron-collecting electrode is smaller than the volume ratio on a side of the hole-collecting electrode. | 04-23-2009 |
20090188547 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes: a pair of electrodes; a photoelectric conversion layer between the pair of electrodes; and a charge-blocking layer between one of the pair of the electrodes and the photoelectric conversion layer. The charge-blocking layer is capable of suppressing injection of a charge from the one of the pair of electrodes into the photoelectric conversion layer upon application of a voltage across the pair of electrodes, and the charge-blocking layer contains an insulating material and an electrically conductive material. | 07-30-2009 |
20090315136 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer provided between the pair of electrodes and a stress buffer layer provided between the photoelectric conversion layer and at least one of the electrodes, and the stress buffer layer has a stack structure comprising a crystalline sublayer. | 12-24-2009 |
20110068254 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1. | 03-24-2011 |
20110227058 | ORGANIC ELECTROLUMINESCENCE ELEMENT - An organic electroluminescence element including at least one organic layer including a light emitting layer, between an anode and a cathode, wherein at least one layer of the at least one organic layer contains at least one selected from specific nitrogen-containing heterocyclic derivatives, and at least one layer of the at least one organic layer contains a specific electron-transporting phosphorous light emitting material. | 09-22-2011 |
20120126219 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR PRODUCING THE SAME - An organic electroluminescent element including: a first electrode; at least one organic deposition layer; and a second electrode, the first electrode, the organic deposition layer, and the second electrode being formed in this order, wherein the organic deposition layer satisfies the relationship 0.09305-24-2012 | |
20120184730 | ORGANIC SEMICONDUCTING MATERIAL, AND FILM, ORGANIC ELECTRONIC DEVICE AND INFRARED DYE COMPOSITION EACH INCLUDING SAID MATERIAL - An organic semiconducting material comprises a naphthalocyanine derivative represented by formula (1); | 07-19-2012 |
20130168790 | ORGANIC PHOTOELECTRIC CONVERSION ELEMENT AND IMAGE ELEMENT - An organic photoelectric conversion element comprises: a pair of electrodes; an organic photoelectric conversion layer arranged between the pair of electrodes; and an positive hole blocking layer arranged between one of the pair of electrodes and the organic photoelectric conversion layer, wherein an ionization potential of the positive hole blocking layer is larger than a work function of the adjoining electrode by 1.3 eV or more, and wherein an electron affinity of the positive hole blocking layer is equal to or larger than that of the adjoining organic photoelectric conversion layer. An electron blocking layer may be arranged between the other one of the pair of electrodes and the organic photoelectric conversion layer, wherein its electron affinity is smaller than a work function of the adjoining electrode by 1.3 eV or more, and its ionization potential is equal to or smaller than that of the adjoining organic photoelectric conversion layer. | 07-04-2013 |
20140239156 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion element comprises a photoelectric conversion section that includes: a pair of electrodes; and a photoelectric conversion layer disposed between the pair of electrodes, wherein the photoelectric conversion section further comprises between one of the pair of electrodes and the photoelectric conversion layer a first charge-blocking layer that restrains injection of charges from the one of the electrodes into the photoelectric conversion layer when a voltage is applied to the pair of electrodes, and the first charge-blocking layer comprises a plurality of layers. | 08-28-2014 |