Patent application number | Description | Published |
20080224151 | Nitride-based semiconductor element and method of forming nitride-based semiconductor
- A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained. | 09-18-2008 |
20080280445 | Manufacturing method of nitride semiconductor device and nitride semiconductor device - Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed. | 11-13-2008 |
20090046755 | INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element. | 02-19-2009 |
20090086778 | NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 | 04-02-2009 |
20090086783 | NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 | 04-02-2009 |
20090097523 | SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME - Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other. | 04-16-2009 |
20090116529 | SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS, AND OPTICAL PICKUP APPARATUS - A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element. | 05-07-2009 |
20090238230 | SEMICONDUCTOR LASER APPARATUS - A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside. | 09-24-2009 |
20090252189 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential. | 10-08-2009 |
20090262771 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide). | 10-22-2009 |
20090262772 | SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer. | 10-22-2009 |
20090263925 | NITRIDE-BASED LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate. | 10-22-2009 |
20100025701 | Method Of Fabricating Nitride-Based Semiconductor Light-Emitting Device And Nitride-Based Semiconductor Light-Emitting Device - A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate. | 02-04-2010 |
20100111131 | SEMICONDUCTOR LASER APPARATUS - A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other. | 05-06-2010 |
20100189146 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS - A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves. | 07-29-2010 |
20100193833 | Nitride-Based Semiconductor Device, Light Apparatus, and Method of Manufacturing Nitride-Based Semiconductor Device - A nitride-based semiconductor device includes a substrate made of a nitride-based semiconductor, a device layer formed on the substrate, and an electrode formed on a surface of the substrate opposite to the device layer. The substrate includes a first surface having a nonpolar plane or a semipolar plane, a second surface opposite to the first surface, a defect concentration region extending in a direction inclined with respect to a normal direction of the first surface from the first surface toward the second surface and penetrating to the second surface and a current path region separated from other region of the substrate by the defect concentration region employed as a boundary, the defect concentration region is not exposed on the first surface, and the electrode is formed on the second surface in the current path region. | 08-05-2010 |
20100219419 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor element which can suppress deterioration of element characteristics even when a semiconductor element section includes a plurality of directions having different thermal expansion coefficients within an in-plane direction. A semiconductor laser element (the semiconductor element) is provided with the semiconductor element section, which includes a direction of [1-100] and a direction of [0001] having different thermal expansion coefficients within the in-plane direction of a main surface, and a sub-mount, which includes an arrow (E) direction and an arrow (F) direction having different thermal expansion coefficients within the in-plane direction of the main surface. The semiconductor element section is bonded on the sub-mount so that the direction [1-100] of the semiconductor element section is close to the side of the arrow (E) direction than the arrow (F) direction of the sub-mount. | 09-02-2010 |
20100246624 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER - A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device ( | 09-30-2010 |
20100260227 | SEMICONDUCTOR LASER APPARATUS AND FABRICATION METHOD THEREOF - A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device. | 10-14-2010 |
20100265981 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER - A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode ( | 10-21-2010 |
20110013659 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device ( | 01-20-2011 |
20110102311 | BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY DEVICE - A backlight unit ( | 05-05-2011 |
20110102477 | LIQUID CRYSTAL DISPLAY DEVICE - A backlight unit ( | 05-05-2011 |
20110200065 | NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 | 08-18-2011 |
20110211609 | INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element. | 09-01-2011 |
20110298757 | TOUCH PANEL INPUT SYSTEM AND INPUT PEN - A touch panel input system of the present invention includes a touch panel integrated liquid crystal display device ( | 12-08-2011 |
20120027040 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - In this semiconductor laser apparatus, a first wire-bonding portion is arranged at a position in a fourth direction from a first semiconductor laser device and in a first direction from a photodetector, and a second wire-bonding portion is arranged at a position in the fourth direction from the first semiconductor laser device and in a third direction from the first wire-bonding portion. A third wire-bonding portion is arranged at a position in a second direction from a third semiconductor laser device and in the first direction from the photodetector, and a fourth wire-bonding portion is arranged at a position in the second direction from the third semiconductor laser device and in the third direction from the third wire-bonding portion. | 02-02-2012 |
20120033702 | SEMICONDUCTOR LASER APPARATUS - A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside. | 02-09-2012 |
20120108011 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A BACK ELECTRODE - A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations. | 05-03-2012 |
20120162064 | COORDINATE SENSOR AND DISPLAY DEVICE - The amount of the light emitted from a light-emitting diode is changed from that of the initial condition to increase, among the light sensors that are not shielded from the light emitted from the light-emitting diode, the number of the light sensors at which the difference (C−D) between the light detection amount at the light sensor when the light-emitting diode is ON and the light detection amount at the light sensor when the light-emitting diode is OFF is equal to the difference (A−B) between the light detection amount at the light sensor in the initial condition when the light-emitting diode was ON and the light detection amount at the light sensors in the initial condition when the light-emitting diode was OFF with no detection object present. As a result, regardless of the presence or absence of the detection object, the coordinate sensor and the display device disclosed can establish a threshold for determining the presence or absence of the detection object, and can also determine the coordinates of the detection object in a stable manner regardless of changes in the ambient environmental light or in the ambient environmental temperature, or fluctuations in the amount of light emitted from the light-emitting element disposed in the coordinate sensor or the change in the sensitivity of the light-receiving elements. | 06-28-2012 |
20120176342 | POSITION DETECTION SYSTEM, DISPLAY PANEL, AND DISPLAY DEVICE - In an LED unit ( | 07-12-2012 |