Patent application number | Description | Published |
20110156050 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan. | 06-30-2011 |
20110204381 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 08-25-2011 |
20120273797 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 11-01-2012 |
20130168739 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n | 07-04-2013 |
20130181226 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an opening | 07-18-2013 |
20130181255 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer | 07-18-2013 |
20130221434 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer | 08-29-2013 |
20130234156 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer | 09-12-2013 |
20130240900 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a semiconductor device or the like which includes a channel and a gate electrode in an opening and in which electric field concentration near a bottom portion of the opening can be reduced. The semiconductor device includes n | 09-19-2013 |
20130248876 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer | 09-26-2013 |
20130313564 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 11-28-2013 |
20130316507 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - A method for manufacturing a heterojunction field effect transistor | 11-28-2013 |
20140004668 | METHOD FOR MANUFACTURING NITRIDE ELECTRONIC DEVICES | 01-02-2014 |
20140110758 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer | 04-24-2014 |
20140203329 | NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTRONIC DEVICE - Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R | 07-24-2014 |