Patent application number | Description | Published |
20080203565 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device | 08-28-2008 |
20080265392 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect. | 10-30-2008 |
20080303136 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost. | 12-11-2008 |
20090026636 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - Semiconductor device has a semiconductor chip embedded in an insulating layer. A semiconductor device comprises a semiconductor chip formed to have external connection pads and a positioning mark that is for via formation; an insulating layer containing a non-photosensitive resin as an ingredient and having a plurality of vias; and wiring electrically connected to the external connection pads through the vias and at least a portion of which is formed on the insulating layer. The insulating layer is formed to have a recess in a portion above the positioning mark. The bottom of the recess is the insulating layer alone. Vias have high positional accuracy relative to the mark. | 01-29-2009 |
20090215261 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect. | 08-27-2009 |
20090244866 | Circuit Device - The circuit device includes a first transmitting inductor, a first insulating layer, a first receiving inductor, and a second receiving inductor. The first transmitting inductor is constituted of a helical conductive pattern and receives a transmitted signal. The first receiving inductor is located in a region overlapping the first transmitting inductor through the first insulating layer. The first receiving inductor is constituted of a helical conductive pattern, and generates a received signal corresponding to the transmitted signal input to the first transmitting inductor. The second receiving inductor is connected in series to the first receiving inductor, and constituted of a helical conductive pattern. The second receiving inductor generates a voltage in an opposite direction to that generated by the first receiving inductor, in response to a magnetic field of the same direction. | 10-01-2009 |
20090273092 | SEMICONDUCTOR MODULE HAVING AN INTERCONNECTION STRUCTURE - In a method for manufacturing a semiconductor module, a metal layer is formed on a support substrate. Then, first conductive posts and a first insulating layer are formed on the metal layer. The first insulating layer surrounds the sides of the first conductive posts. Then, second conductive posts are formed above the first conductive posts. The second conductive posts are electrically connected to the first conductive posts. Then, a second insulating layer is formed so as to cover the second conductive posts. The second insulating layer is made of adhesive resin. Finally, a semiconductor device is adhered to the second conductive posts by the second insulating layer while a gap between the first semiconductor device and the first insulating layer is sealed by the second insulating layer. | 11-05-2009 |
20090309688 | Circuit apparatus and method of manufacturing the same - A circuit apparatus includes a first insulating layer, a first inductor, a first terminal, a second terminal, a first interconnect, and a wire. The first inductor is located at one surface of the first insulating layer and configured by a spiral conductive pattern. The first terminal and the second terminal are exposed from one surface of the first insulating layer. The first interconnect is formed on one surface of the first insulating layer to connect the first terminal and an external end of the first inductor. The wire is located on a one-surface side of the first insulating layer to connect the second terminal and a central end of the first inductor. | 12-17-2009 |
20100048019 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 02-25-2010 |
20100087058 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film. | 04-08-2010 |
20100144091 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate. | 06-10-2010 |
20100258918 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE EMPLOYING THEREOF - A semiconductor device is provided with a silicon substrate and a structure filled in a through hole that has a rectangular cross section and extends through the silicon substrate. The structure comprises a pipe-shaped through electrode, stripe-shaped through electrodes, silicons, a first insulating film, a second insulating film and a third insulating film. The pipe-shaped through electrode is utilized as a pipe-shaped electric conductor that extends through the silicon substrate. In addition, the stripe-shaped through electrodes are provided in the interior of the pipe-shaped through electrode so that the stripe-shaped through electrodes extend through the silicon substrate and is spaced away from the pipe-shaped through electrode. A plurality of through electrodes are provided in substantially parallel within the inner region of the pipe-shaped through electrode. | 10-14-2010 |
20100295191 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WIRING BOARD AND SEMICONDUCTOR DEVICE - In the wiring board, insulating layers and wiring layers are alternately laminated, and the wiring layers are electrically connected by the vias. The wiring board includes first terminals arranged in a first surface and embedded in an insulating layer, second terminals arranged in a second surface opposite to the first surface and embedded in an insulating layer, and lands arranged in an insulating layer and in contact with the first terminals. The vias electrically connect the lands and the wiring layers laminated alternately with the insulating layers. No connecting interface is formed at an end of each of the vias on the land side but a connecting interface is formed at an end of each of the vias on the wiring layer side. | 11-25-2010 |
20100297811 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer | 11-25-2010 |
20100314778 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In forming a semiconductor device, an insulation layer is formed on top of a semiconductor chip having a plurality of external terminals. A plurality of interconnections is formed on the insulating layer. External terminals are electrically connected to coordinated interconnections through a plurality of vias formed in the insulation layer. The interconnections are each formed integral with a via conduction part which covers the entire surfaces of the bottom and the sidewall sections of the via. The interconnection is formed so as to be narrower in its region overlying the via than the upper via diameter. | 12-16-2010 |
20110089561 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor package has: a first chip; and a second chip. The first chip has: an insulating resin layer formed on a principal surface of the first chip; a bump-shaped first internal electrode group that is so formed in a region of the insulating resin layer as to penetrate through the insulating resin layer and is electrically connected to the second chip; an external electrode group used for electrical connection to an external device; and an electrostatic discharge protection element group electrically connected to the external electrode group. The first internal electrode group is not electrically connected to the electrostatic discharge protection element group. | 04-21-2011 |
20110101541 | SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 05-05-2011 |
20110121445 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers. | 05-26-2011 |
20110147058 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - A multilayer wiring substrate has a configuration in which a first wiring layer including a plurality of first conductive members formed in a first insulating film, and formed to be exposed at a second surface side, and a second wiring layer including a plurality of second conductive members formed in a second insulating film which is formed on a first surface side on the side opposite to the second surface are laminated. The plurality of second conductive members is respectively connected directly to any of the plurality of first conductive members or connected through a different conductive material. The plurality of first conductive members is connected directly to any of the plurality of second conductive members or connected through a different conductive material, but includes dummy conductive members which do not form current pathways connecting with connected second conductive member. | 06-23-2011 |
20110281401 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost. | 11-17-2011 |
20110316124 | SEMICONDUCTOR DEVICE - A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect. | 12-29-2011 |
20120075050 | CIRCUIT DEVICE - The device includes a first inductor, a first insulating layer, a second inductor, and a third inductor. The first inductor includes a helical conductive pattern. | 03-29-2012 |
20120100715 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE - The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region. | 04-26-2012 |
20120104560 | SEMICONDUCTOR DEVICE HAVING A THROUGH ELECTRODE - A semiconductor device | 05-03-2012 |
20120153501 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device in which the semiconductor chip including the external terminal(s) is embedded in an insulating layer and interconnect conductor(s) is (are) formed on the insulating layer, base hole(s) is (are) formed at position(s) of the insulating layer corresponding to the external terminal(s) in a state where the semiconductor chip has shrunk after having been embedded in the insulating layer. The interconnect conductor(s) is (are) electrically connected to the external terminal(s) through the base hole(s). | 06-21-2012 |
20120211872 | SEMICONDUCTOR DEVICE - A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device | 08-23-2012 |
20130032930 | SEMICONDUCTOR DEVICE COMPRISING THROUGH-ELECTRODE INTERCONNECT - A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter plug is made larger than a cross sectional area and a diameter of a connection plug, and is made smaller than a cross sectional area and a diameter of the large diameter plug. In addition, a protruding portion formed in such a way that the small diameter plug is projected from the silicon substrate is put into an upper face of the large diameter plug. Further, an upper face of the small diameter plug is connected to a first interconnect. | 02-07-2013 |
20130099390 | ELECTRONIC DEVICE - In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer. | 04-25-2013 |
20140103524 | ELECTRONIC DEVICE - In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer. | 04-17-2014 |
20140333149 | CIRCUIT DEVICE - A circuit device includes a semiconductor substrate, a first inductor provided over the semiconductor substrate, and a second inductor provided over the semiconductor substrate and coupled to the first inductor. The first inductor and second inductor are wound in a same direction with each other from respective inner end portions to respective outer end portions thereof. | 11-13-2014 |
20140346681 | ELECTRONIC DEVICE - In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer. | 11-27-2014 |