Patent application number | Description | Published |
20120250399 | MEMORY CIRCUIT USING SPIN MOSFETS, PATH TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, SWITCHING BOX CIRCUIT, SWITCHING BLOCK CIRCUIT, AND FIELD PROGRAMMABLE GATE ARRAY - A memory circuit according to an embodiment includes: a first transistor including a first source/drain electrode, a second source/drain electrode, and a first gate electrode; a second transistor including a third source/drain electrode connected to the second source/drain electrode, a fourth source/drain electrode, and a second gate electrode; a third transistor and a fourth transistor forming an inverter circuit, the third transistor including a fifth source/drain electrode, a sixth source/drain electrode, and a third gate electrode connected to the second source/drain electrode, the fourth transistor including a seventh source/drain electrode connected to the sixth source/drain electrode, an eighth source/drain electrode, and a fourth gate electrode connected to the second source/drain electrode; and an output terminal connected to the sixth source/drain electrode. At least one of the third transistor and the fourth transistor is a spin MOSFET, and an output of the inverter circuit is sent from the output terminal. | 10-04-2012 |
20130055189 | METHOD FOR IMPLEMENTING CIRCUIT DESIGN FOR INTEGRATED CIRCUIT AND COMPUTER READABLE MEDIUM - In one embodiment, a method for implementing a circuit design for an integrated circuit includes: (a) obtaining a first wiring to satisfy a given operating frequency; (b) calculating a maximum bypass wiring length based on the given operating frequency and a critical path of the first wiring; (c) obtaining a second wiring by bypassing the first wiring using wires other than wires of the first wiring in a first wiring group, wherein wiring of the integrated circuit is categorized into a plurality of wiring groups, and the first wiring is included in the first wiring group of the categorized wiring groups; and (d) replacing the first wiring with the second wiring, if a difference between the second wiring and the first wiring is not larger than the maximum bypass wiring length, and not replacing the first wiring if said difference is larger than the maximum bypass wiring length. | 02-28-2013 |
20130215670 | MEMORY CIRCUIT AND FIELD PROGRAMMABLE GATE ARRAY - A memory circuit according to an embodiment includes: a plurality of memory cells each having one pair of first and second nonvolatile memory circuits, each of the first and second nonvolatile memory circuits in each memory cell being capable of making a transition between a high resistance state and a low resistance state, and in a state in which one memory cell in the plurality of memory cells has information stored therein, one of the first and second nonvolatile memory circuits in the one memory cell being in a high resistance state whereas the other being in a low resistance state. | 08-22-2013 |
20130222011 | PROGRAMMABLE LOGIC SWITCH - One embodiment provides a programmable logic switch in which a first nonvolatile memory and a second nonvolatile memory are formed in the same well, and in which to change the first nonvolatile memory from an erased state to a written state and leave the second nonvolatile memory being in the erased state, a first write voltage is applied to a first line connected with gate electrodes of the first and second nonvolatile memories, a second write voltage is applied to a second line connected to a source in the first nonvolatile memory, and a third write voltage lower than the second write voltage is applied to a fourth line connected to a source of the second nonvolatile memory. | 08-29-2013 |
20130235688 | LOOK-UP TABLE CIRCUIT - One embodiment provides a look-up table circuit, including: 2 | 09-12-2013 |
20130248959 | PROGRAMMABLE LOGIC SWITCH - According to one embodiment, a programmable logic switch includes first and second word lines above a first path transistor, a first pillar passing through the first and second word lines and connected to the first path transistor, a second pillar passing through the first and second word lines and connected to the first path transistor, a first memory device between the first pillar and the first word line, a second memory device between the first pillar and the second word line, a third memory device between the second pillar and the first word line, and a fourth memory device between the second pillar and the second word line. | 09-26-2013 |
20130257477 | SEMICONDUCTOR INTEGRATED CIRCUIT - One embodiment provides a semiconductor integrated circuit, including: a first input wire; a second input wire; a first look-up table (LUT) comprising: a plurality of first memories; a first number of first switches connected to the first input wire; and a second number of second switches connected to the second input wire, the second number being less than the first number, the first LUT being configured to output information which is stored in one of the first memories; and a second LUT including: a plurality of second memories; a third number of third switches connected to the second input wire; and a fourth number of fourth switches connected to the first input wire, the fourth number being less than the third number, the second LUT being configured to output information which is stored in one of the second memories. | 10-03-2013 |
20130258782 | CONFIGURATION MEMORY - According to one embodiment, a configuration memory includes first and second data lines, a first memory string which comprises at least first and second nonvolatile memory transistors which are connected in series between a common node and the first data line, a second memory string which comprises at least third and fourth nonvolatile memory transistors which are connected in series between the common node and the second data line, and a flip-flop circuit which comprises a first data holding node connected to the common node and a second data holding node connected to a configuration data output node. | 10-03-2013 |
20130307054 | SEMICONDUCTOR INTEGRATED CIRCUIT - One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, each including at least one of logic transistor, wherein the logic transistors include: a first transistor which is directly connected to drains of the first and second nonvolatile memories at its gate; and a second transistor which is not directly connected to the drains of the first and second nonvolatile memories, and wherein a bottom surface of the gate of each of the logic transistors sandwiching the first and second nonvolatile memories is lower in height from a top surface of the substrate than a bottom surface of the control gate of each of the first and second nonvolatile memories. | 11-21-2013 |