Patent application number | Description | Published |
20130032818 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a buffer layer that is disposed over a substrate, a high-resistance layer that is disposed over the buffer layer, the high-resistance layer being doped with a transition metal for achieving high resistance, a low-resistance region that is disposed in a portion of the high-resistance layer or over the high-resistance layer, the low-resistance region being doped with an impurity element for achieving low resistance, an electron travel layer that is disposed over the high-resistance layer including the low-resistance region, an electron supply layer that is disposed over the electron travel layer, a gate electrode that is disposed over the electron supply layer, and a source electrode and a drain electrode that are disposed over the electron supply layer. | 02-07-2013 |
20130105810 | COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT | 05-02-2013 |
20130228795 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer of a first conductivity type formed on one side of a semiconductor substrate; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer; a third semiconductor layer of the first conductivity type formed on the second semiconductor layer; an opening part formed by removing part of the first to third semiconductor layers; a gate insulating film formed so as to cover an inner wall of the opening part; a gate electrode formed inside the opening part via the gate insulating film; a source electrode formed on a surface of the third semiconductor layer; a drain electrode connected to a part corresponding to the gate electrode on another side of the semiconductor substrate; and a fourth electrode formed on the another side of the semiconductor substrate at a part corresponding to the source electrode. | 09-05-2013 |
20130256684 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An embodiment of a compound semiconductor device includes: a substrate; an electron transport layer formed over the substrate; an electron supply layer formed over the electron transport layer; a source electrode and a drain electrode formed over the electron supply layer; a gate electrode formed over the electron supply layer between the source electrode and the drain electrode; a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode; and a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer. | 10-03-2013 |
20140084339 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A compound semiconductor device includes as compound semiconductor layers: a first layer; a second layer larger in band gap than the first layer, formed above the first layer; a third layer having a p-type conductivity type, formed above the second layer; a gate electrode formed above the second layer via the third layer; a fourth layer larger in band gap than the second layer, formed to be in contact with the third layer above the second layer; and a fifth layer smaller in band gap than the fourth layer, formed to be in contact with the third layer above the fourth layer. | 03-27-2014 |
20140092638 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An AlGaN/GaN.HEMT includes: a compound semiconductor layered structure; and an interlayer insulating film that covers a surface of the compound semiconductor layered structure, the interlayer insulating film including a first insulating film and a second insulating film that is formed on the first insulating film to fill irregularities on a surface of the first insulating film and has a flat surface. | 04-03-2014 |
20140151748 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The compound semiconductor device includes a first-compound-semiconductor-layer, a second-compound-semiconductor-layer formed on an upper side of the first-compound-semiconductor-layer and having a band gap larger than the band gap of the first-compound-semiconductor-layer, a p-type third-compound-semiconductor-layer formed on an upper side of the second-compound-semiconductor-layer, an electrode formed on an upper side of the second-compound-semiconductor-layer through the third-compound-semiconductor-layer, a fourth-compound-semiconductor-layer formed so as to be in contact with the third-compound-semiconductor-layer at an upper side of the second-compound-semiconductor-layer and having a band gap smaller than the band gap of the second-compound-semiconductor-layer, and a fifth-compound-semiconductor-layer formed so as to be in contact with the third-compound-semiconductor-layer at an upper side of the fourth-compound-semiconductor-layer and having a band gap larger than the band gap of the fourth-compound-semiconductor-layer. | 06-05-2014 |
20150041860 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the electron transit layer; an upper surface layer configured to be formed on the electron supply layer; a gate electrode configured to be formed on the electron supply layer or the upper surface layer; a source electrode and a drain electrode configured to be formed on the upper surface layer; and first conductivity-type regions configured to be formed in the upper surface layer and the electron supply layer immediately below regions where the source electrode and the drain electrode are formed. The electron supply layer is formed of a nitride semiconductor including In. The upper surface layer is formed of a material including a nitride of one or more elements selected among B, Al, and Ga. | 02-12-2015 |