Patent application number | Description | Published |
20080211034 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a substrate and a p-channel MIS transistor. The p-channel MIS transistor includes: an n-type semiconductor region formed in the substrate; p-type first source and drain regions formed at a distance from each other in the n-type semiconductor region; a first gate insulating film formed on the n-type semiconductor region between the first source region and the first drain region; and a first gate electrode formed on the first gate insulating film. The first gate electrode includes a first nickel silicide layer having a Ni/Si composition ratio of 1 or greater, and a silicide layer formed on the first nickel silicide layer. The silicide layer contains a metal having a larger absolute value of oxide formation energy than that of Si, and a composition ratio of the metal to Si is smaller than the Ni/Si composition ratio. | 09-04-2008 |
20080237727 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The present invention provides a CMIS device that achieves a low threshold voltage by use of a metal gate superior in the resistance to annealing in a reducing atmosphere. The CMIS device includes a substrate, PMISFET and NMISFET. THE PMISFET includes: an N-type semiconductor layer formed on the substrate; first source/drain regions formed in the N-type semiconductor layer; a first gate insulating film formed on the N-type semiconductor layer between the first source/drain regions; a carbon layer formed on the first gate insulating film and having a thickness of 5 nanometers or smaller; a first gate electrode formed on the carbon layer and including a metal. | 10-02-2008 |
20090134479 | Semiconductor device and method for manufacturing the same - It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less. | 05-28-2009 |
20090134480 | Semiconductor device and method for manufacturing the same - It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less. | 05-28-2009 |
20090166767 | Semiconductor device and method for manufacturing the same - It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less. | 07-02-2009 |
20090200616 | SEMICONDUCTOR DEVICE - According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized. | 08-13-2009 |
20090267134 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film. | 10-29-2009 |
20100210100 | Semiconductor device and method for manufacturing the same - It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si< | 08-19-2010 |
20110227164 | SEMICONDUCTOR DEVICE - According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized. | 09-22-2011 |
20130250656 | RESISTANCE-VARIABLE MEMORY DEVICE - A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off. | 09-26-2013 |