Patent application number | Description | Published |
20120081149 | LEVEL SHIFT CIRCUIT - A level shift circuit is disclosed. The circuit includes a series circuit of a resistor and a switching device connected between a high voltage side power supply voltage in a secondary side voltage system and a low voltage side power supply voltage in a primary side voltage system, a series circuit of a resistor and a switching device connected between the high voltage side power supply voltage in the secondary side voltage system and the low voltage side power supply voltage in the primary side voltage system, and a latch malfunction protecting circuit operated in the secondary side voltage system to have voltages at a connection point of the resistor and the switching device and at a connection point of the resistor and the switching device inputted. | 04-05-2012 |
20130093402 | INDUCTIVE LOAD CONTROLLING DEVICE - An inductive load controlling device in which a target current value is reached in a short time while suppressing overshoot, undershoot, and ringing, including a target value filter that receives a target current value of electric current to be supplied to the load and exhibits differential characteristics using a plurality of filter parameters; an inductive load controlling section that controls load current to be supplied to the load based on a filter output from the target value filter; a parameter memory section that stores parameters for the filter corresponding to a plurality of selection conditions; a selection condition detecting section that detects the selection conditions; and a parameter selection processing section that selects the filter parameters fitting to the selection condition out of the parameter memory section based on the selection condition detected by the selection condition detecting section and delivers the filter parameters to the filter. | 04-18-2013 |
20130278319 | LEVEL SHIFT CIRCUIT UTILIZING RESISTANCE IN SEMICONDUCTOR SUBSTRATE - A level shift circuit does not affect delay time, regardless of the size of resistor resistance value. The level shift circuit includes first and second series circuits wherein first and second resistors and first and second switching elements are connected in series, rise detector circuits that compare the rise potentials of output signals of the first and second series circuits with a predetermined threshold value, and output first and second output signals, which are pulse outputs of a constant duration, when the threshold value is exceeded, and third and fourth switching elements connected in parallel to the first and second resistors respectively. The gate terminals of the third and fourth switching elements are connected to the rise detector circuits, and the third and fourth switching elements are turned on by the first and second output signals respectively. | 10-24-2013 |
20130293247 | LEVEL SHIFT CIRCUIT USING PARASITIC RESISTOR IN SEMICONDUCTOR SUBSTRATE - A level shift circuit in which no adverse effect is produced on a delay time, regardless of the resistance values of resistors. The level shift circuit includes an operation detection circuit that outputs a nseten signal and a nresen signal in response to a state of output from first and second series circuits, a latch malfunction protection circuit connected to the operation detection circuit, a latch circuit connected through first to sixth resistors to first and second level shift output terminals of the first and second series circuits, first and second parasitic resistors, and third and fourth switching elements connected in parallel therewith, and fifth and sixth switching elements connected to a power source potential, a connection point of the first and second resistors or a connection point of the third and fourth resistors, and the operation detection circuit. | 11-07-2013 |
20130321094 | ISOLATOR AND ISOLATOR MANUFACTURING METHOD - In certain aspects of the invention, an isolator is configured by a reception circuit, a transmission circuit, and a transformer. In some aspects, the transmission circuit is disposed in an anterior surface of a semiconductor substrate. The transformer is disposed in a posterior surface of the semiconductor substrate and transmits in an electrically isolated state to the reception circuit, a signal input from the transmission circuit. The transformer is configured by a primary coil and a secondary coil. The primary coil can be configured by a metal film embedded in an oxide film inside a coil trench. The secondary coil can be disposed inside an insulating film covering the primary coil so as to oppose the primary coil and is insulated from the primary coil by the insulating film. | 12-05-2013 |
20140103736 | SIGNAL TRANSMISSION DEVICE AND SWITCHING POWER SUPPLY - A signal transmission device of aspects of the invention can include a master circuit connected to the primary sides of first and second transformers and a slave circuit connected to the secondary sides of the first and second transformers. The master circuit sets one of first and second transmitting/receiving circuits for transmitting operation and the other for receiving operation according to a control signal, and detecting a leading edge and a falling edge of the control signal, transmits a pulse signal with the pulse interval changing after a predetermined period of time. The slave circuit detects the change of the pulse interval of the signal received through third and fourth transmitting/receiving circuits and according to the detection result, sets one of the third and fourth transmitting/receiving circuits for receiving operation and the other for transmitting operation. | 04-17-2014 |
20140292392 | SEMICONDUCTOR DEVICE AND HIGH SIDE CIRCUIT DRIVE METHOD - Aspects of the invention can include a pulse generating means that outputs a set signal and reset signal for driving the high potential side switching element is such that, while either one of the set signal or reset signal is in an on-state as a main pulse signal for putting the high potential side switching element into a conductive state or non-conductive state, the other signal is turned on a certain time after the rise of the main pulse signal, thereby generating a condition in which the set signal and reset signal are both in an on-state. | 10-02-2014 |
20140320180 | SEMICONDUCTOR DEVICE - In aspects of the invention, a semiconductor device can include one level shift circuit that outputs a low-side input signal as a high-side signal upon raising a signal level, a pulse modulation circuit that operates in a low-side region, generates a data symbol constituted by or more bits and representing a set signal or a reset signal, where bit is defined as a combination of codes forming a pair. The pulse generation circuit can output the generated data symbol as an input signal of the level shift circuit. Also included can be a pulse demodulation circuit that operates in a high-side region, demodulates the data symbol outputted from the level shift circuit and generates a level-shifted set signal or reset signal; and a control circuit that controls conduction/non-conduction of the high-potential-side switching element on the basis of the level-shifted set signal or reset signal outputted from the pulse demodulation circuit. | 10-30-2014 |