Patent application number | Description | Published |
20080250619 | Vertical type semiconductor device producing apparatus - A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped. | 10-16-2008 |
20080251014 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20080251015 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20090176017 | SUBSTRATE PROCESSING APPARATUS - A substrate processing device comprises a reaction vessel | 07-09-2009 |
20090178694 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 07-16-2009 |
20110025320 | MAGNETIC SENSOR - A magnetoresistive element includes magnetoresistive films each having an upper surface and a lower surface, and conductors combining the magnetoresistive films in series and including top electrodes and bottom electrodes. Each one of the top electrodes and corresponding one of the bottom electrodes oppose each other to sandwich corresponding one of the magnetoresistive films. Each electrode of the top electrodes and the bottom electrodes includes a stem section and a branch section, the stem section extending in a direction along a series alignment direction of the magnetoresistive films, and the branch section extending along the lamination plane in a direction intersecting a direction in which the stem section extends. The branch section in the top electrode is in contact with an upper surface of the corresponding magnetoresistive film, and the branch section in the bottom electrode is in contact with a lower surface of the corresponding magnetoresistive film. | 02-03-2011 |
20110068786 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREOF - A magnetic sensor includes: a first and a second magnetoresistive elements each including: a magnetization free layer; a nonmagnetic spacing layer; a magnetization pinned layer having one or more first layers of a first group of ferromagnetic layers and one or more second layers of a second group of ferromagnetic layers, in which the first layer and the second layer are stacked alternately with a nonmagnetic coupling layer in between, and so antiferromagnetically coupled to each other as to have opposite magnetizations to each other; and an antiferromagnetic layer pinning magnetization orientation in the one or more first and the second layers. The first layers in the first magnetoresistive element are one more in number than that of the one or more second layers. The number of the one or more first layers and that of the one or more second layers in the second magnetoresistive element are equal. | 03-24-2011 |
20110130001 | Substrate Processing Apparatus - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 06-02-2011 |
20110176967 | VERTICAL TYPE SEMICONDUCTOR DEVICE PRODUCING APPARATUS - A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas. | 07-21-2011 |
20110221433 | MAGNETIC SENSOR - A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization. | 09-15-2011 |
20120240348 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 09-27-2012 |
20130022860 | LEAD ACID STORAGE BATTERY - A flooded-type lead acid storage battery in which charging is intermittently carried out in a short period of time and high-efficiency discharge to a load is carried out in a partial state of charge, wherein the charge acceptance and service life characteristics are improved by using a positive plate in which the specific surface area of the active material is set to 6 m | 01-24-2013 |
20130029210 | LEAD ACID STORAGE BATTERY - In a liquid-type lead acid storage battery in which charging is performed for a short time intermittently and high-rate discharging to load is performed in a partially charged state, there are used a positive electrode plate in which the utilization rate of a positive electrode activation substance is set to a range of 50% to 65%, and a negative electrode plate in which a carbonaceous electroconductive material and a bisphenol/aminobenzenesulfonic acid/formaldehyde condensate are added to the negative electrode activation substance, thereby improving the charge acceptance and the lifespan performance; and a separator whose surface disposed opposite the negative electrode plate is formed from a nonwoven fabric made of a material selected from glass, pulp, and polyolefin, is used as a separator; whereby the charge acceptance and the lifespan performance under PSOC are improved. | 01-31-2013 |
20130133696 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 05-30-2013 |
20130157118 | LEAD-ACID BATTERY - In a valve-regulated lead-acid battery in which charging is performed intermittently on every short time and high rate discharging to a load is performed in a partial state of charge (PSOC), a valve-regulated lead-acid battery improved for the charge acceptance and the life characteristic under PSOC than usual is provided. A positive electrode plate having a specific surface area of an active material of 5.5 m | 06-20-2013 |
20150050540 | LEAD ACID BATTERY - On each negative plate ( | 02-19-2015 |
Patent application number | Description | Published |
20100067897 | FOCAL-PLANE SHUTTER AND IMAGE PICKUP APPARATUS - A focal-plane shutter | 03-18-2010 |
20110058805 | IMAGE PICKUP UNIT AND IMAGE PICKUP APPARATUS - An apparatus includes an image sensor unit, a retaining member configured to retain the image sensor unit on a photographer side and to retain an optical member on an object side, a first sealing member configured, when the image sensor unit is mounted on the retaining member, to form a closely sealed space by sealing between the image sensor unit and the retaining member, the first sealing member being provided on the photographer side of the retaining member, and a second sealing member configured, when the optical member is mounted on the retaining member, to form a closely sealed space by sealing between the optical member and the retaining member, the second sealing member being provided on the object side. | 03-10-2011 |
20110189865 | ELECTRONIC APPARATUS - Connector jacks are surface-mounted on one surface of a substrate. A reinforcing member reinforces the connector jacks. On the reinforcing member, a first reinforcing part, which is in contact with the back of the surface of the substrate on which the connector jack is mounted, and second reinforcing parts, which elastically urge the top surface of the connector jacks, are formed. | 08-04-2011 |
20130251359 | IMAGE-PICKUP APPARATUS HAVING SHUTTER APPARATUS - An image-pickup apparatus includes a driving member for leading blades configured to drive a leading blade group, a driving member for trailing blades configured to drive a trailing blade group, a cam member configured to rotate the driving member for leading blades and the driving member for trailing blades, a motor configured to drive the cam member, and a controller configured to control the motor. The controller applies a second voltage that is lower than a first voltage applied in releasing the driving member for leading blades to the motor when the driving member for trailing blades is released at normal shooting, and a third voltage that is lower than the first voltage and that is higher than the second voltage to the motor when the driving member for trailing blades is released at live view shooting. | 09-26-2013 |
20140270748 | SHUTTER APPARATUS AND IMAGE PICKUP APPARATUS - A shutter apparatus includes a blade member, a blade moving member, a locking member, a cam member, and a restriction member. The cam member moves the locking member from the locking position to the non-locking position so that the blade moving member moves from the closing position to the opening position. The restriction member moves from the non-restriction position to the restriction position after the blade moving member moves from the closing position to the opening position. The cam member moves the locking member in a direction opposite to a direction from the non-locking position to the locking position so that the locking member moves the restriction member from the restriction position to the non-restriction position. | 09-18-2014 |
20150043900 | SHUTTER APPARATUS AND IMAGE PICKUP APPARATUS - A shutter apparatus includes a blade member, a blade moving member, a locking member, a cam member, and a restriction member. The cam member moves the locking member from the locking position to the non-locking position so that the blade moving member moves from the closing position to the opening position. The restriction member moves from the non-restriction position to the restriction position after the blade moving member moves from the closing position to the opening position. The cam member moves the locking member in a direction opposite to a direction from the non-locking position to the locking position so that the locking member moves the restriction member from the restriction position to the non-restriction position. | 02-12-2015 |
Patent application number | Description | Published |
20100186774 | CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%. | 07-29-2010 |
20110183519 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber. | 07-28-2011 |
20110186984 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates. | 08-04-2011 |
20120108077 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber. | 05-03-2012 |
20120214300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate. | 08-23-2012 |
20140162454 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber. | 06-12-2014 |
20140295667 | Method of Manufacturing Semiconductor Device - To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. | 10-02-2014 |
20150050818 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE PRODUCING METHOD - Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times. | 02-19-2015 |