Patent application number | Description | Published |
20090272315 | SILICA GLASS CRUCIBLE - A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer. | 11-05-2009 |
20100107965 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL, METHOD FOR MANUFACTURING THEREOF AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less. | 05-06-2010 |
20100170298 | Vitreous silica crucible manufacturing apparatus - A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R | 07-08-2010 |
20100178855 | CARBON ELECTRODE GRINDING APPARATUS - A carbon electrode grinding apparatus for shaping a front end of an arc discharge carbon electrode is provided with front end grinding blades configured to grind a front end surface of the carbon electrode, lateral surface grinding blades configured to grind a surface from the front end surface to a base end of the carbon electrode, and rotation means configured to rotate and drive the front end grinding blades and the lateral surface grinding blades around a rotation axis line coincident with an axis line of the carbon electrode. | 07-15-2010 |
20100212582 | MODIFICATION PROCESS OF SYNTHETIC SILICA POWDER AND ITS QUARTZ GLASS PRODUCT - A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C. | 08-26-2010 |
20100326349 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND VITREOUS SILICA CRUCIBLE - Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V | 12-30-2010 |
Patent application number | Description | Published |
20100071417 | ARC DISCHARGE METHOD, ARC DISCHARGE APPARATUS, AND FUSED SILICA CRUCIBLE MANUFACTURING APPARATUS - An arc discharge method of the present invention includes the steps of: heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in an output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 to 0.9. | 03-25-2010 |
20100071613 | METHOD AND APPARATUS FOR MANUFACTURING FUSED SILICA CRUCIBLE, AND THE FUSED SILICA CRUCIBLE - A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98. | 03-25-2010 |
20100089308 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 04-15-2010 |
20100095880 | Arc melting high-purity carbon electrode and application thereof - An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does not cause local lack of the electrode and does not create black foreign materials or concave portions on the inner surface of the crucible. The arc melting high-purity carbon electrode is a carbon electrode used to heat and melt silica powder by arc discharge, in which the density of the carbon electrode is equal to or more than 1.60 g/cm | 04-22-2010 |
20100095881 | ARC DISCHARGE APPARATUS, APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA GLASS CRUCIBLE, AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL - The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm | 04-22-2010 |