Patent application number | Description | Published |
20090041961 | Aluminum Nitride Sintered Body - Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 μm and 20 μm, and also has an arithmetic mean surface height Ra of 1 μm or less and a maximum height Rz of 10 μm or less in the unpolished condition after firing. | 02-12-2009 |
20090088312 | Aluminum Nitride Sinter, Slurry, Green Object, and Degreased Object - An aluminum nitride sinter includes aluminum nitride crystal grains and a grain boundary phase derived from a sintering aid. In any cross section in a surface region extending up to 100 μm from the surface of the sinter, the proportion of the area of a grain boundary phase having a circumscribed circle diameter of 1 μm or less to the total area of the grain boundary phase is at least 50%, and the average grain diameter of the aluminum nitride crystal grains is in the range of 3.0 to 7.0 μm. This aluminum nitride sinter can be produced from an aluminum nitride slurry having a specific grain size distribution, an aluminum nitride green object having a specific submerged density, or an aluminum nitride degreased object having a specific pore diameter. | 04-02-2009 |
20090155625 | Methods of Joining Aluminum Nitride Sinters and Aluminum Nitride Joined Articles - [Problem] It is an object to provide a joining method that enables to join aluminum nitride sinters together efficiently and tightly. | 06-18-2009 |
20090173437 | Methods of Joining Ceramics and Ceramic Joined Articles - [Problem] It is an object to provide a joining method, whereby even ceramics having an extremely small dielectric loss factor such as aluminum nitride can be joined efficiently and tightly. | 07-09-2009 |
20090174303 | Cement - A cement for bonding an arc tube body made of an aluminum nitride sintered body and an electrode support made of molybdenum achieves high gas tightness in the obtainable arc tube without impairing the excellent translucency of the aluminum nitride sintered body. The cement contains a molybdenum powder and an aluminum nitride powder, and the total amount of metalloid elements, rare-earth elements and metal elements (except the rare-earth elements and aluminum element) corresponding to the following conditions (1) and (2) is 300 ppm or less: (1) metal elements having a melting point of 2000° C. or lower, and (2) metal elements having an ion radius smaller than that of aluminum. | 07-09-2009 |
20100183860 | REFORMED ALUMINUM NITRIDE SINTERED BODY AND METHOD OF PRODUCING THE SAME - [Problems] To provide a method of producing, easily and in a high yield, a reformed aluminum nitride sintered body having very excellent light transmission property which can be favorably used as a light-transmitting cover particularly for light sources having high luminous efficiencies. | 07-22-2010 |
20100255304 | Aluminum Nitride Single Crystal Forming Polygonal Columns and a Process for Producing a Plate-Shaped Aluminum Nitride Single Crystal Using the Same - The present invention provides an aluminum nitride single crystal forming polygonal columns, the polygonal columns having the following properties [a] to [c]: | 10-07-2010 |
Patent application number | Description | Published |
20080300128 | Process for Producing an Aluminum Nitride Sintered Body - An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK. | 12-04-2008 |
20100015370 | Process for Producing Integrated Body from Aluminum Nitride Sintered Body and High-Melting Point Metal Member - A process for producing integrated bodies from an aluminum nitride sintered body and a high-melting point metal member includes the steps of: (I) forming an aluminum nitride porous layer on a planned joint surface of the aluminum nitride sintered body; and (II) causing a mixture paste including aluminum nitride and a high-melting point metal to be present between the aluminum nitride porous layer and a planned joint surface of the high-melting point metal member while impregnating the porous layer with the mixture paste, and sintering the aluminum nitride and high-melting point metal in the mixture paste. | 01-21-2010 |
20100093514 | Aluminum Nitride Sintered Body and Production Process for the Same - A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less. | 04-15-2010 |
20100233393 | Process for Producing Aluminum Nitride Sintered Body - A process for producing an aluminum nitride sintered body having improved light transmission properties includes the step of subjecting an ordinary aluminum nitride sintered body to thermal treatment in an inert atmosphere at a temperature of from 1300 to 1400° C. for at least 1 hr. A cover for light sources is produced by the process and includes a hollow aluminum nitride sintered body having a light transmittance in the visible light region of at least 87%, which body is obtainable by thermally treating a hollow aluminum nitride sintered body in an inert atmosphere at a temperature of 1300 to 1400° C. for at least 1 hr. | 09-16-2010 |
20130298822 | SILICON MELT CONTACT MEMBER, PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF CRYSTALLINE SILICON - Provided are a silicon melt contact member which is markedly improved in liquid repellency to a silicon melt, which can retain the liquid repellency permanently, and which is suitable for production of crystalline silicon; and a process for efficient production of crystalline silicon, particularly, spherical crystalline silicon having high crystallinity, by use of the silicon melt contact member. A silicon melt contact member having a porous sintered body layer present on its surface, preferably the sintered body layer being present on a substrate of a ceramic material such as aluminum nitride, wherein the porous sintered body layer consists essentially of silicon nitride, has a thickness of 10 to 500 μm, and has, dispersed therein, many pores preferably having an average equivalent circle diameter of 1 to 25 μm at a pore-occupying area ratio of 30 to 80%, the pores connecting to each other to form communicating holes having a depth of 5 μm or more. | 11-14-2013 |
20130313567 | BASE SUBSTRATE, GALLIUM NITRIDE CRYSTAL MULTI-LAYER SUBSTRATE AND PRODUCTION PROCESS THEREFOR - A GaN crystal multi-layer substrate having surfaces with various crystal orientations formed on a sapphire base substrate, such as a substrate whose principal surface is a <11-20> plane which is the a-plane, a <1-100> plane which is the m-plane, or a <11-22> plane having a low threading dislocation density and high crystal quality of a GaN crystal, and a production process therefor. | 11-28-2013 |