Patent application number | Description | Published |
20080230725 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT - A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below. | 09-25-2008 |
20090004763 | LASER CRYSTALLIZATION METHOD AND CRYSTALLIZATION APPARATUS - The present invention discloses a laser crystallization method and crystallization apparatus using a high-accuracy substrate height control mechanism. There is provided a laser crystallization method includes obtaining a first pulse laser beam having an inverse-peak-pattern light intensity distribution formed by a phase shifter, and irradiating a thin film disposed on a substrate with the first pulse laser beam, thereby melting and crystallizing the thin film, the method includes selecting a desired one of reflected light components of a second laser beam by using a polarizing element disposed on an optical path of the second laser beam when illuminating, with the second laser beam, an first pulse laser beam irradiation position of the thin film, correcting a height of the substrate to a predetermined height by detecting the selected reflected light component, and irradiating the first pulse laser beam to the thin film having the corrected height. | 01-01-2009 |
20090061603 | METHOD OF CRYSTALLIZING SEMICONDUCTOR FILM - A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit. | 03-05-2009 |
20090134394 | CRYSTAL SILICON ARRAY, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more. | 05-28-2009 |
20090224253 | CRYSTALLIZATION METHOD, THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, DISPLAY, AND SEMICONDUCTOR DEVICE - According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction. | 09-10-2009 |
20090278060 | PHOTOIRRADIATION APPARATUS, CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND DEVICE - A photoirradiation apparatus includes an optical modulation element which phase-modulates light, an illumination system to illuminate the optical modulation element, and an imaging optical system which applies the phase-modulated light to a non-single-crystal semiconductor film to form a predetermined light intensity distribution with a strip-like repetitive region having long sides adjacent to each other. The light intensity distribution has a distribution which is downwards convex along a center line in a short side direction and a center line in a long side direction of the repetitive region. The light intensity distribution includes isointensity lines each bent to form a projection from a center of the repetitive region outward in the long side direction. A radius of curvature of an end of at least one isointensity line is not more than 0.3 μm. A pitch of the repetitive region in the short side direction is not more than 2 μm. | 11-12-2009 |
20090284839 | OPTICAL DEVICE AND CRYSTALLIZATION DEVICE - An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments. | 11-19-2009 |
20100304546 | SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR THIN FILM, WHICH IS SUBJECTED TO HEAT TREATMENT TO HAVE ALIGNMENT MARK, CRYSTALLIZING METHOD FOR THE SEMICONDUCTOR THIN FILM, AND CRYSTALLIZING APPARATUS FOR THE SEMICONDUCTOR THIN FILM - Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region. | 12-02-2010 |
20110075237 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT - A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below. | 03-31-2011 |