Patent application number | Description | Published |
20090057739 | Ge channel device and method for fabricating ge channel device - The Ge channel device comprises: a Ge channel layer ( | 03-05-2009 |
20100283027 | MULTI-VALUE RECORDING PHASE-CHANGE MEMORY DEVICE, MULTI-VALUE RECORDING PHASE-CHANGE CHANNEL TRANSISTOR, AND MEMORY CELL ARRAY - A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer | 11-11-2010 |
20110127486 | Phase-change memory device, phase-change channel transistor and memory cell array - A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature and a second layer formed from a resistive material, and wherein the resistance value of the second layer is smaller than the resistance value of the first layer in the amorphous phase, but is larger than the resistance value of the first layer in the crystalline phase. | 06-02-2011 |
20130089979 | SEMICONDUCTOR DEVICE HAVING A MULTILEVEL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME - A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere. | 04-11-2013 |
Patent application number | Description | Published |
20080206949 | APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device. | 08-28-2008 |
20080233705 | METHOD FOR SELECTIVELY FORMING ELECTRIC CONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess. | 09-25-2008 |
20090004886 | METHOD OF MANUFACTURING AN INSULATING FILM CONTAINING HAFNIUM - A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen. | 01-01-2009 |
20090236587 | SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF DIFFERENT FUNCTIONAL ELEMENTS AND METHOD OF MANUFACTURING THE SAME - At least first and second Si | 09-24-2009 |
20090236747 | Semiconductor device and method for fabricating the same - A multilevel interconnect structure in a semiconductor device comprises a first insulating layer ( | 09-24-2009 |
20100112776 | APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device. | 05-06-2010 |
20110189849 | SEMICONDUCTOR DEVICE WITH A BARRIER FILM - A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film. | 08-04-2011 |
20120190212 | LOW DIELECTRIC CONSTANT INSULATING FILM AND METHOD FOR FORMING THE SAME - Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH | 07-26-2012 |