Patent application number | Description | Published |
20110164095 | METHODS FOR MANUFACTURING LIQUID EJECTING HEAD AND PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A method for manufacturing a piezoelectric element comprising forming a titanium film containing titanium; forming a platinum film containing platinum on the titanium film; forming a piezoelectric precursor film containing bismuth, lanthanum, iron and manganese on the platinum film; crystallizing the piezoelectric precursor film to form a piezoelectric layer by firing the piezoelectric precursor film in an atmosphere of an inert gas; and forming an electrode on the piezoelectric layer. | 07-07-2011 |
20110164096 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A piezoelectric element comprising a first electrode, a piezoelectric layer which includes bismuth, lanthanum iron, and manganese and which formed above the first electrode and a second electrode formed above the piezoelectric layer. The integrated intensity of a diffraction peak observed at 20°<2θ<25° is 90% or more of the sum of the integrated intensities of diffraction peaks observed at 20°<2θ<50° in an X-ray powder diffraction pattern of the piezoelectric layer measured at φ=Φ=0°. | 07-07-2011 |
20110164097 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A piezoelectric element comprising a piezoelectric layer containing bismuth, lanthanum iron manganese and titanium and a electrode formed above the piezoelectric layer. | 07-07-2011 |
20110164098 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING LIQUID-EJECTING HEAD - A piezoelectric element comprising a first electrode, a piezoelectric layer containing bismuth lanthanum iron and manganese formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer contains crystals preferentially oriented in a (111) plane. | 07-07-2011 |
20110220734 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer. | 09-15-2011 |
20120147101 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A piezoelectric element comprises a silicon oxide layer, an intermediate layer provided above the silicon oxide layer, a first electrode provided above the intermediate layer, a piezoelectric layer provided above the intermediate layer, and a second electrode provided above the piezoelectric layer. The piezoelectric layer is configured of a complex oxide having a perovskite structure and containing at least bismuth and iron. The intermediate layer contains magnesium oxide and/or aluminum oxide. | 06-14-2012 |
20120242755 | METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element is manufactured in a method including forming an adhesion layer of zirconium above a zirconium oxide insulating film, forming a first electrode above the adhesion layer, forming a piezoelectric layer of a complex oxide containing bismuth above the first electrode, and forming a second electrode above the piezoelectric layer. | 09-27-2012 |
20140055531 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer. | 02-27-2014 |