Patent application number | Description | Published |
20080279245 | VCSEL, OPTICAL DEVICE, LIGHT IRRADIATION DEVICE, DATA PROCESSING DEVICE, LIGHT SOURCE, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND OPTICAL TRANSMISSION SYSTEM - A VCSEL includes a first distributed Bragg reflector (DBR) of a first conductivity type formed on a substrate and including at least one semiconductor layer to be oxidized, an active region having a column shaped structure and formed on the first DBR, and a second DBR of a second conductivity type. At least one hole starting from a surface of the first DBR and reaching the at least one semiconductor layer to be oxidized is formed in the first DBR outside of a column shaped structure of the second DBR. An oxidized region is formed in the semiconductor layer to be oxidized by selectively oxidizing from a side surface of the hole. In the first DBR, a first current path is formed by a conductive region surrounded by the oxidized region, and a second current path is formed by a conductive region not surrounded by the oxidized region. | 11-13-2008 |
20090201963 | VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, FREE SPACE OPTICAL COMMUNICATION DEVICE, OPTICAL TRANSMISSION SYSTEM, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM - Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror. | 08-13-2009 |
20090201965 | VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM - Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror. | 08-13-2009 |
20100074573 | OPTICAL MODULE, OPTICAL TRANSMISSION DEVICE, AND SURFACE OPTICAL DEVICE - An optical module includes a mounted member, a surface optical device and a positioning portion. The mounted member includes an inserted portion. The surface optical device includes a substrate, an optical axis, and an insertion portion. The optical axis is provided in a direction perpendicular to the substrate. The insertion portion has a step surface that is inserted into the inserted portion of the mounted member in a direction perpendicular to the optical axis so as to position the optical axis. The positioning portion is provided in the mounted member and positions an optical transmission member so that the optical transmission member is optically coupled to the surface optical device. | 03-25-2010 |
20100208760 | SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region. A first semiconductor layer next to the first selectively oxidized layer has an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, the first conductive region having a size smaller than that of the second conductive region. | 08-19-2010 |
20100226656 | OPTICAL WAVEGUIDE, LIGHT TRANSMISSION APPARATUS, AND ELECTRONIC EQUIPMENT - An optical waveguide includes a first waveguide region and a second waveguide region. The first waveguide region includes a first core, a first clad provided around the first core, and a light reflecting surface. The light reflecting surface has at least one function of (i) reflecting light from a longitudinal direction of the first core toward a direction crossing the longitudinal direction and (ii) reflecting light from the crossing direction toward the longitudinal direction of the first core. The second waveguide region continues from the first waveguide region. The second waveguide region that includes a second core, and a second clad provided around the second core. The second core of the second waveguide region is thinner than the first core of the first waveguide region. A total thickness of the second core and the second clad is smaller than that of the first core and the first clad. | 09-09-2010 |
20110135318 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region. | 06-09-2011 |
20110150500 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed. | 06-23-2011 |
20110182314 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, AND OPTICAL TRANSMISSION DEVICE - A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction. | 07-28-2011 |
20130034922 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed from the second semiconductor multilayer reflector to the first semiconductor multilayer reflector; a current narrowing layer formed inside of the columnar structure and having a conductive region surrounded by an oxidization region; a first electrode formed at a top of the columnar structure, electrically connected to the second semiconductor multilayer reflector and defining a beam window; a first insulating film comprised of a material with a first refractive index and formed on the first electrode to cover the beam window; and a second insulating film comprised of a material with a second refractive index and formed on the first insulating film, of which a radius is smaller than a radius of the conductive region. | 02-07-2013 |
20140126941 | IMAGE FORMING APPARATUS, FIXING DEVICE, AND DRYING DEVICE - An image forming apparatus includes an image forming device forming an image on a recording medium; and a light source that, after the image has been formed by the image forming device, irradiates the recording medium with light to fix the image on the recording medium, while the recording medium moves relatively in a predetermined movement direction. The light source includes a current supply section, a light emitting section, and a current output section. Current for light emission is supplied to the current supply section. The light emitting section includes light emitting elements that are disposed two-dimensionally. At least the light emitting elements provided side by side in the movement direction are electrically connected in parallel. The current output section outputs the current that has passed through the light emitting section. The current supply section and the light emitting section are provided side by side in the movement direction. | 05-08-2014 |