Patent application number | Description | Published |
20090075185 | MASK BLANK AND METHOD OF MANUFACTURING MASK - A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen. | 03-19-2009 |
20090325084 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. An etching mask film serving as an etching mask when forming a phase shift part is provided on the front surface side, where the phase shift part is to be formed, of the substrate. A light-shielding film serving to shield exposure light is provided on the back surface side (opposite-side surface) of the substrate. | 12-31-2009 |
20100075236 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank is for fabricating a phase shift mask having a light-transmissive substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. The phase shift part is a dug-down part formed by digging down the light-transmissive substrate from a surface thereof to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmissive substrate at a portion where the phase shift part is not provided. The photomask blank includes a light-shielding part formed in a peripheral area around a transfer pattern area of the surface of the light-transmissive substrate and adapted to shield exposure light and further includes an etching mask film formed in the transfer pattern area of the surface of the light-transmissive substrate and made of a material being substantially dry-etchable with a chlorine-based gas, but not substantially dry-etchable with a fluorine-based gas, the etching mask film serving as an etching mask at least until the digging depth is reached when forming the dug-down part. | 03-25-2010 |
20100092874 | PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK BLANK - Problem: There is a demand for a phase shift mask that makes it possible to decrease the film thickness of the phase shift film, can satisfy the requirement relating to pattern accuracy, without collapsing the OPC pattern, and enables control of optical characteristics and pattern defect inspection, and also for a phase shift mask blank as an original plate for such a phase shift mask. | 04-15-2010 |
20110070533 | PHOTOMASK BLANK, PHOTOMASK , AND METHOD FOR MANUFACTURING PHOTOMASK BLANK - The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 70 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 45% or less of the thickness of the entire light-shielding film. | 03-24-2011 |
20110081605 | PHOTOMASK BLANK AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a photomask blank in which a light-shielding film consisting of a plurality of layers is provided on a light transmissive substrate, wherein a layer that is provided to be closest to the front surface is made of CrO, CrON, CrN, CrOC or CrOCN, and wherein the atom number density of the front-surface portion of the light-shielding film is 9×10 | 04-07-2011 |
20110104592 | PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK - The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film. | 05-05-2011 |
20110111332 | PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK - The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film. | 05-12-2011 |
20110318674 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer. | 12-29-2011 |
20120100466 | MASK BLANK AND TRANSFER MASK - A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film | 04-26-2012 |
20120100470 | MASK BLANK, TRANSFER MASK, AND METHOD OF MANUFACTURING A TRANSFER MASK - Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank | 04-26-2012 |
20120258388 | SURFACE TREATMENT METHOD FOR A MASK BLANK, METHOD OF MANUFACTURING A MASK BLANK, AND METHOD OF MANUFACTURING A MASK - Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less. | 10-11-2012 |
20130105441 | MASK BLANK AND METHOD OF MANUFACTURING AN IMPRINTING MOLD | 05-02-2013 |
20130122407 | REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND REFLECTIVE MASK - To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less. | 05-16-2013 |
20130177841 | MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND TRANSFER MASK - Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate | 07-11-2013 |
20130273738 | MASK BLANK, METHOD OF MANUFACTURING THE SAME, TRANSFER MASK, AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer. | 10-17-2013 |
20140322634 | MASK BLACK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN≧−0.00526CMo2−0.640CMo+26.624. | 10-30-2014 |