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Masahiro Fukuda
Masahiro Fukuda, Kumamoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20110014379 | DEVELOPING APPARATUS, RESIST PATTERN FORMING METHOD AND STORAGE MEDIUM - Provided is a developing apparatus configured to slim the resist pattern while reducing the number of developing modules. A room temperature developing liquid and a high temperature developing liquid to modify the surface layer of a resist pattern can be supplied from a common nozzle to a substrate disposed on a mount table. Although both developing liquids may be sequentially discharged by switching between the supply line for the room temperature developing liquid and the supply line for the high temperature developing liquid, it is also possible to join these supply lines for supplying the room temperature developing liquid from the former supply line, and then adjust the ratio of the flow rates between both supply lines, and then supply the mixed liquid of the developing liquids as a high temperature developing liquid. | 01-20-2011 |
Masahiro Fukuda, Kawasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20080315254 | SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR LAYER FORMATION METHOD - A semiconductor device fabrication method and a semiconductor layer formation method for making a semiconductor layer having excellent morphology selectively epitaxial-grow over a semiconductor, and a semiconductor device. When a recessed source/drain pMOSFET is fabricated, a gate electrode is formed over a Si substrate in which STIs are formed with a gate insulating film therebetween (step S | 12-25-2008 |
| 20090045471 | Semiconductor device fabricated by selective epitaxial growth method - A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established. | 02-19-2009 |
| 20090117715 | Semiconductor device fabricated by selective epitaxial growth method - A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established. | 05-07-2009 |
| 20090276779 | JOB MANAGEMENT APPARATUS - When there is a job activation request accompanied with variable information in which an execution attribute and an identifier of a job are associated, a job definition in which an execution attribute is described with an arbitrary identifier is referred, and based on the variable information, an identifier within the job definition is replaced with the execution attribute to create a job. Then, the job created in this manner is activated. | 11-05-2009 |
| 20100015774 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer. | 01-21-2010 |
| 20110014765 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing a semiconductor device including forming a gate insulating film and a gate electrode over a Si substrate; forming a recess in the Si substrate at both sides of the gate electrode; forming a first Si layer including Ge in the recess; forming an interlayer over the first Si layer; forming a second Si layer including Ge over the interlayer; wherein the interlayer is composed of Si or Si including Ge, and a Ge concentration of the interlayer is less than a Ge concentration of the first Si layer and a Ge concentration of the second Si layer. | 01-20-2011 |
Masahiro Fukuda, Sumida-Ku JP
| Patent application number | Description | Published |
|---|---|---|
| 20100316770 | BEVERAGE PACKED IN CONTAINER - By containing non-polymer catechins in high concentration, the physiological effects of the catechins are manifested, minerals indispensable to the living body are fortified, and the storage stability of a beverage is improved. | 12-16-2010 |
Masahiro Fukuda, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100210083 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions. | 08-19-2010 |
Masahiro Fukuda, Koshi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100154834 | CLEANING APPARATUS, COATING AND DEVELOPING APPARATUS, AND CLEANING METHOD - A wafer W is held in a horizontal attitude within an airtight container | 06-24-2010 |
Masahiro Fukuda, Iwaki-City JP
| Patent application number | Description | Published |
|---|---|---|
| 20090094437 | Method And Device For Controlling Multicore Processor - The present invention provides a method and a device for controlling a multicore processor by selecting and operating the appropriate number of cores corresponding to an operation state of the processor. In a multicore processor having a plurality of cores each independently performing a calculation process on one processor, an operating rate of a thread or task of each core within a predetermined time is calculated by summing the operating times or the number of operating times within a predetermined time, and an overall operating rate of all the cores is found by summing the calculated operating rates. The number of operating cores corresponding to the overall operating rate is determined by a previously set table. The number of cores operating has a hysteresis characteristic in which the number of operating cores is different between increasing and decreasing times of the overall operating rate. Operating cores corresponding to the number of the determined cores are selected by the previously set table. When an exceptional process is detected, all the cores operate. After a predetermined time, when it is determined that the exceptional process is eliminated, the process returns to the original processing. | 04-09-2009 |
Masahiro Fukuda, Yokohama JP
| Patent application number | Description | Published |
|---|---|---|
| 20110250748 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming a second sidewall along a lateral wall of the second gate electrode, forming an oxide film to cover the semiconductor substrate, the first gate electrode, the second gate electrode, the first sidewall and the second sidewall, forming a resist above the oxide film to cover the first region, removing the oxide film in the second region by etching the oxide film with the resist serving as a mask, removing the resist, and executing a plasma process by using a gas containing chlorine with respect to the semiconductor substrate and the oxide film in the first region. | 10-13-2011 |