Patent application number | Description | Published |
20080315254 | SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR LAYER FORMATION METHOD - A semiconductor device fabrication method and a semiconductor layer formation method for making a semiconductor layer having excellent morphology selectively epitaxial-grow over a semiconductor, and a semiconductor device. When a recessed source/drain pMOSFET is fabricated, a gate electrode is formed over a Si substrate in which STIs are formed with a gate insulating film therebetween (step S | 12-25-2008 |
20090045471 | Semiconductor device fabricated by selective epitaxial growth method - A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established. | 02-19-2009 |
20090117715 | Semiconductor device fabricated by selective epitaxial growth method - A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established. | 05-07-2009 |
20090276779 | JOB MANAGEMENT APPARATUS - When there is a job activation request accompanied with variable information in which an execution attribute and an identifier of a job are associated, a job definition in which an execution attribute is described with an arbitrary identifier is referred, and based on the variable information, an identifier within the job definition is replaced with the execution attribute to create a job. Then, the job created in this manner is activated. | 11-05-2009 |
20100015774 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer. | 01-21-2010 |
20110014765 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing a semiconductor device including forming a gate insulating film and a gate electrode over a Si substrate; forming a recess in the Si substrate at both sides of the gate electrode; forming a first Si layer including Ge in the recess; forming an interlayer over the first Si layer; forming a second Si layer including Ge over the interlayer; wherein the interlayer is composed of Si or Si including Ge, and a Ge concentration of the interlayer is less than a Ge concentration of the first Si layer and a Ge concentration of the second Si layer. | 01-20-2011 |
20110296425 | Management apparatus, management system, and recording medium for recording management program - A management apparatus includes a job definition information storage section for storing, at each period, a job definition file including execution characteristics indicating the start condition of each job in the execution schedule, the estimated execution time of the job, the state of the job, and a restriction at the time of setting the start schedule of the job; an exclusion information storage section for storing exclusion definition information indicating the jobs to be executed exclusively from each other; a reset job specifying section for acquiring a first job definition file of a schedule to be executed and a second job definition file of an executed schedule, then extracting, as a reset job, an abnormally terminated job from the second job definition file, and extracting a job using the reset job and the issue message of the reset job as start conditions, to store the extracted jobs in a related job set table; an execution possible time zone calculating section for searching, as an execution possible time zone, a time zone enabling execution of the job stored in the related job set table, from the first job definition file based on the second job definition file and the exclusion definition information; a start schedule adjusting section for setting the start schedule of the job stored in the related job set table based on the execution possible time zone; and a start schedule time setting section for setting the start time of the job set in the first job definition file, based on the start schedule of the job stored in the related job set table. | 12-01-2011 |
20120009750 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer. | 01-12-2012 |
20120329229 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer. | 12-27-2012 |
Patent application number | Description | Published |
20110250748 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming a second sidewall along a lateral wall of the second gate electrode, forming an oxide film to cover the semiconductor substrate, the first gate electrode, the second gate electrode, the first sidewall and the second sidewall, forming a resist above the oxide film to cover the first region, removing the oxide film in the second region by etching the oxide film with the resist serving as a mask, removing the resist, and executing a plasma process by using a gas containing chlorine with respect to the semiconductor substrate and the oxide film in the first region. | 10-13-2011 |
20120108025 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess. | 05-03-2012 |
20130210207 | FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF DYNAMIC THRESHOLD TRANSISTOR - A method includes: etching a silicon substrate except for a silicon substrate portion on which a channel region is to be formed to form first and second trenches respectively at a first side and a second side of the silicon substrate portion; filling the first and second trenches by epitaxially growing a semiconductor layer having etching selectivity against silicon and further a silicon layer; removing the semiconductor layer selectivity by a selective etching process to form voids underneath the silicon layer respectively at the first side and the second side of the substrate portion; burying the voids at least partially with a buried insulation film; forming a gate insulation film and a gate electrode on the silicon substrate portion; and forming a source region in the silicon layer at the first side of the silicon substrate portion and a drain region at the second side of the silicon substrate portion. | 08-15-2013 |
20140193960 | FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF DYNAMIC THRESHOLD TRANSISTOR - A method includes: etching a silicon substrate except for a silicon substrate portion on which a channel region is to be formed to form first and second trenches respectively at a first side and a second side of the silicon substrate portion; filling the first and second trenches by epitaxially growing a semiconductor layer having etching selectivity against silicon and further a silicon layer; removing the semiconductor layer selectivity by a selective etching process to form voids underneath the silicon layer respectively at the first side and the second side of the substrate portion; burying the voids at least partially with a buried insulation film; forming a gate insulation film and a gate electrode on the silicon substrate portion; and forming a source region in the silicon layer at the first side of the silicon substrate portion and a drain region at the second side of the silicon substrate portion. | 07-10-2014 |
Patent application number | Description | Published |
20130083030 | DISPLAY CONTROL APPARATUS, DISPLAY CONTROL METHOD, AND RECORDING MEDIUM STORING DISPLAY CONTROL PROGRAM - A display control apparatus includes a processor that executes a procedure, the procedure including receiving an instruction to display a first component which indicates a process corresponding to a first process type, and controlling a display device to display the first component in accordance with the received instruction and display a second component, which indicates a process corresponding to a second process type, associating with the first component on the basis of an order relationship of the first process type and the second process type. | 04-04-2013 |
20140297354 | WORKFLOW CONTROL APPARATUS AND METHOD THEREFOR - A control unit of a workflow control apparatus identifies, among tasks included in a plurality of workflows, tasks using the same resource based on workflow definition information, and determines the execution sequence of the identified tasks based on the content of each of the identified tasks defined in the workflow definition information. The control unit identifies, among the identified tasks, one or more tasks whose execution is omissible based on the content of each of the identified tasks and the execution sequence of the identified tasks. | 10-02-2014 |
20140297355 | WORKFLOW CONTROL APPARATUS AND METHOD THEREFOR - A first executing unit executes, among tasks included in a first workflow, a first task group including one or more tasks using a resource. When a task included in the first task group is stopped, a rollback processing unit restores the resource to its former state prior to the execution of the first task group. After the resource is restored to the former state prior to the execution of the first task group, a second executing unit starts executing, among tasks included in a second workflow, a second task group including one or more tasks using the resource. | 10-02-2014 |