| Patent application number | Description | Published |
|---|
| 20100128070 | LIGHTING DEVICE FOR DISPLAY DEVICE AND DISPLAY DEVICE - A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The light source includes a high voltage area to be subjected to relatively high voltage, and a low voltage area to be subjected to relatively low voltage. The chassis includes a distance providing mechanism arranged to provide a vertical distance between the chassis and the light source, so that the vertical distance is relatively large at the high voltage area of the light source and relatively small at the low voltage area of the light source. | 05-27-2010 |
| 20100149789 | LIGHTING DEVICE FOR DISPLAY DEVICE AND DISPLAY DEVICE - A lighting device for a display device includes a light source and a chassis arranged to cover the light source. The chassis includes one of a groove section and an opening section located directly below the light source. The one of a groove section and an opening section has a relatively small width at an area directly below a low voltage area of the light source, compared to at an area directly below a high voltage area of the light source. | 06-17-2010 |
| 20100156952 | LIGHTING DEVICE FOR DISPLAY DEVICE AND DISPLAY DEVICE - A lighting device for a display device includes a light source and a light source control device arranged to control the light source. The light source control device is arranged to generate a pulse signal as a light source control signal Vcon to control the light source. The light source control signal Vcon includes pulses, which individually have different shapes. | 06-24-2010 |
| 20100289420 | LIGHTING DEVICE AND DISPLAY DEVICE - A lighting device ( | 11-18-2010 |
| 20110031892 | LIGHTING DEVICE AND DISPLAY DEVICE - A lighting device ( | 02-10-2011 |
| Patent application number | Description | Published |
|---|
| 20090072257 | Light emitting device - An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure. | 03-19-2009 |
| 20090206354 | Semiconductor light-emitting device - A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed. | 08-20-2009 |
| 20100065869 | Light emitting device and method for fabricating the same - A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au. | 03-18-2010 |
| 20100065870 | Light emitting device - A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate is provided at an opposite side of the reflecting layer with respect to a side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. An adhesion layer is provided at a surface of the supporting substrate at an opposite side with respect to a side of the metal bonding layer. A back surface electrode of an alloy contacts with a surface of the adhesion layer at an opposite side with respect to a surface contacting to the supporting substrate. | 03-18-2010 |
| 20100078659 | Light-emitting element - A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion. | 04-01-2010 |
| 20100207146 | Light emitting element - A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region. | 08-19-2010 |
