| Patent application number | Description | Published |
|---|
| 20100091281 | METHOD FOR DETECTING EDGE ON TRANSPARENT SUBSTRATE, APPARATUS FOR DETECTING EDGE ON TRANSPARENT SUBSTRATE, AND PROCESSING APPARATUS - An apparatus for detecting an edge of a transparent substrate includes a light source provided on a rear side of the edge of the transparent substrate, a first polarizer provided between the transparent substrate and the light source and arranged to convert light from the light source to linearly polarized light, a light receiving unit provided on a front side of the edge of the transparent substrate, and a second polarizer provided between the transparent substrate and the light receiving unit, and having a polarization axis that is perpendicular or substantially perpendicular to a polarization axis of the first polarizer. The light receiving unit is configured to observe, through the second polarizer, the linearly polarized light that is converted by the first polarizer and is transmitted through the edge of the transparent substrate, the linearly polarized light that is converted by the first polarizer and passes outside the transparent substrate, and emitted light that is converted by the first polarizer, and is propagated through inside of the transparent substrate and emitted from a side surface of the edge of the transparent substrate. | 04-15-2010 |
| 20120091452 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 04-19-2012 |
| 20120138923 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - The present invention provides a thin film transistor including an oxide semiconductor layer ( | 06-07-2012 |
| 20120199891 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a gate electrode ( | 08-09-2012 |
| 20120218485 | ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines ( | 08-30-2012 |
| 20120241750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes: a thin film transistor having a gate line ( | 09-27-2012 |
| 20120326144 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A method includes: a step of forming a gate electrode ( | 12-27-2012 |
| 20130023086 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs ( | 01-24-2013 |
| 20130026462 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, AND ACTIVE MATRIX SUBSTRATE - A method for manufacturing a thin film transistor includes the step of forming a gate electrode ( | 01-31-2013 |
