Patent application number | Description | Published |
20080253038 | Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon and method for manufacturing tunneling magnetoresistive sensor - A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors. | 10-16-2008 |
20080261082 | TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER - A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before. | 10-23-2008 |
20080286612 | Tunneling magnetic sensing element including Pt sublayer disposed between free magnetic sublayer and enhancing sublayer and method for producing tunneling magnetic sensing element - There is provided a tunneling magnetic sensing element having an insulating barrier layer composed of Ti—O, a high rate of resistance change (ΔR/R) compared with the known art, and an interlayer coupling magnetic field Hin lower than that in the known art while low RA is maintained and the coercivity of a free magnetic layer is maintained at a low level comparable to the known art; and a method for producing the tunneling magnetic sensing element. An insulating barrier layer is composed of Ti—O. A free magnetic layer is formed on the insulating barrier layer and has a laminated structure of an enhancing sublayer composed of a CoFe alloy, a Pt sublayer, and a soft magnetic sublayer composed of a NiFe alloy, stacked in that order from the bottom. | 11-20-2008 |
20080291586 | Tunneling magnetic sensor including platinum layer and method for producing the same - A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors. | 11-27-2008 |
20120234112 | FORCE SENSOR AND METHOD OF MANUFACTURING THE SAME - A sensor substrate includes a plurality of piezoresistance elements. The electrical resistance of each piezoresistance element changes in accordance with an amount of displacement of a displacement portion displaced by an external load applied through a pressure receiving unit. A base substrate supports the sensor substrate. The sensor substrate and the base substrate each include a support supporting the displacement portion such that the displacement portion can be displaced and a plurality of electrically connecting portions electrically connected to the plurality of piezoresistance elements. The supports of the sensor and base substrates are joined to each other and the plurality of electrically connecting portions of the sensor and base substrates are joined to each other. Furthermore, in each of the sensor and base substrates, either the support or the plurality of electrically connecting portions or both extend to the periphery of the sensor substrate or the base substrate. | 09-20-2012 |
20140062956 | INPUT DEVICE AND METHOD FOR DETECTING LOADS ON MULTIPLE POINTS USING THE INPUT DEVICE - An input device includes a capacitance type touch panel sensor configured to detect positional coordinates of multiple pressing points that are simultaneously pressed on an operation face, load detection sensors configured to detect barycentric coordinates of and a barycentric load on the pressing points, and a controller configured to calculate loads on the pressing points on the basis of the positional coordinates of, the barycentric coordinates of, and the barycentric load on the pressing points. | 03-06-2014 |
20150160751 | INPUT DEVICE AND METHOD OF DETECTING LOAD AT PLURALITY OF POINTS USING INPUT DEVICE - An input device includes a capacitive touch panel sensor capable of detecting a pressing position on an operation surface, a plurality of load sensors configured to output a sensor output depending on a load, and a control unit configured to calculate respective loads at a plurality of pressing points simultaneously pressed on the operation surface. In particular, it is possible to obtain the load of each pressing point even when the number of a plurality of simultaneously pressed pressing points is equal to the number of load sensors. | 06-11-2015 |
20150160783 | INPUT DEVICE AND CONTROL METHOD USING INPUT DEVICE - An input device includes a position detection sensor capable of detecting an input operation position of an operation body on an operation surface, a load detection sensor capable of detecting a load in the input operation position, and a control unit capable of executing offset calibration to correct an offset of an output of the load detection sensor based on input operation information resulting from an output of the position detection sensor. | 06-11-2015 |