| Patent application number | Description | Published |
|---|
| 20090026570 | Methods and structures for discharging plasma formed during the fabrication of semiconuctor device - Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure. | 01-29-2009 |
| 20090184427 | FLASH MEMORY DEVICE WITH WORD LINES OF UNIFORM WIDTH AND METHOD FOR MANUFACTURING THEREOF - A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated. | 07-23-2009 |
| 20090209076 | METHOD FOR MANUFACTURING SONOS FLASH MEMORY - A method for manufacturing a semiconductor device which includes steps of forming a dummy layer on a semiconductor substrate, forming a groove 12 in the semiconductor substrate while using the dummy layer as a mask, forming a tunnel insulating film and a trap layer to cover an inner surface of the groove and the dummy layer, eliminating the trap layer formed above the upper surface and at the sides of the dummy layer, and forming a top insulating film to cover a remaining trap layer and the exposed tunnel insulating film. | 08-20-2009 |
| 20090237990 | SONOS DEVICE WITH INSULATING STORAGE LAYER AND P-N JUNCTION ISOLATION - The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes bit lines disposed in a semiconductor substrate, a first ONO disposed between the bit lines on the semiconductor substrate, and a second ONO film disposed on each of the bit lines. The film thickness of a first silicon nitride film in the first ONO film is larger than the film thickness of a second silicon nitride film in the second ONO film. | 09-24-2009 |
| 20090325354 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a semiconductor device that includes a semiconductor substrate ( | 12-31-2009 |
| 20100109070 | FABRICATING METHOD OF MIRROR BIT MEMORY DEVICE HAVING SPLIT ONO FILM WITH TOP OXIDE FILM FORMED BY OXIDATION PROCESS - A device and method employing a polyoxide-based charge trapping component. A charge trapping component is patterned by etching a layered stack that includes a tunneling layer positioned on a substrate, a charge trapping layer positioned on the tunneling layer, and an amorphous silicon layer positioned on the charge trapping layer. An oxidation process grows a gate oxide layer from the substrate and converts the amorphous silicon layer into a polyoxide layer. | 05-06-2010 |
| 20110156127 | FLASH MEMORY DEVICE WITH WORD LINES OF UNIFORM WIDTH AND METHOD FOR MANUFACTURING THEREOF - A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated. | 06-30-2011 |
