Patent application number | Description | Published |
20120205747 | SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, INTEGRATED CIRCUIT, AND METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth. | 08-16-2012 |
20130341721 | SEMICONDUCTOR WAFER, FIELD-EFFECT TRANSISTOR, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING FIELD-EFFECT TRANSISTOR - Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity E | 12-26-2013 |
20140054726 | METHOD OF PRODUCING SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - There is provided a fabrication technique of a MOS structure that has a small EOT without increasing the interface trap density. More specifically, provided is a method of producing a semiconductor wafer that includes a semiconductor crystal layer, an interlayer made of an oxide, nitride, or oxynitride of a semiconductor crystal constituting the semiconductor crystal layer, and a first insulating layer made of an oxide and in which the semiconductor crystal layer, the interlayer, and the first insulating layer are arranged in the stated order. The method includes (a) forming the first insulating layer on an original semiconductor crystal layer, and (b) exposing a surface of the first insulating layer with a nitrogen plasma to nitride, oxidize, or oxynitride a part of the original semiconductor crystal layer, thereby forming the interlayer, together with the semiconductor crystal layer that is the rest of the original semiconductor crystal layer. | 02-27-2014 |
20140091392 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - There is provided a semiconductor device including a first channel-type first MISFET formed and a second channel-type second MISFET: a first source and a first drain of the first MISFET and a second source and a second drain of the second MISFET are made of the same conductive substance, and the work function Φ | 04-03-2014 |
20140091393 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - There is provided a semiconductor device including: a first source and a first drain of a first-channel-type MISFET formed on a first semiconductor crystal layer, which are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom; and a second source and a second drain of a second-channel-type MISFET formed on a second semiconductor crystal layer, which are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom. | 04-03-2014 |
20140091398 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a first source and a first drain of a P-channel-type MISFET formed on a Ge wafer, which are made of a compound having a Ge atom and a nickel atom, a compound having a Ge atom and a cobalt atom, or a compound having a Ge atom, a nickel atom, and a cobalt atom, and a second source and a second drain of an N-channel-type MISFET formed on the Group III-V compound semiconductor, which are made of a compound having a Group III atom, a Group V atom, and a nickel atom, a compound having a Group III atom, a Group V atom, and a cobalt atom, or a compound having a Group III atom, a Group V atom, a nickel atom, and a cobalt atom. | 04-03-2014 |
20140091433 | METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER - There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H | 04-03-2014 |
20140203408 | METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER - There is provided a method that includes forming a sacrificial layer and the semiconductor crystal layer on a semiconductor crystal layer formation wafer in the stated order, bonding together the semiconductor crystal layer formation wafer and a transfer-destination wafer such that a first surface of the semiconductor crystal layer and a second surface of the transfer-destination wafer face each other, and splitting the transfer-destination wafer from the semiconductor crystal layer formation wafer with the semiconductor crystal layer remaining on the transfer-destination wafer side, by etching away the sacrificial layer by immersing the semiconductor crystal layer formation wafer and the transfer-destination wafer wholly or partially in an etchant. Here, the transfer-destination wafer includes an inflexible wafer and an organic material layer, and a surface of the organic material layer is the second surface. | 07-24-2014 |
20150047708 | ORGANIC-INORGANIC HYBRID PHOTOELECTRIC CONVERSION DEVICE - An organic-inorganic hybrid photoelectric conversion device comprising:
| 02-19-2015 |