| Patent application number | Description | Published |
|---|
| 20080257495 | TEMPERATURE SETTING METHOD FOR THERMAL PROCESSING PLATE, TEMPERATURE SETTING APPARATUS FOR THERMAL PROCESSING PLATE, AND COMPUTER-READABLE STORAGE MEDIUM - In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set. | 10-23-2008 |
| 20080257496 | TEMPERATURE SETTING METHOD FOR THERMAL PROCESSING PLATE, TEMPERATURE SETTING APPARATUS FOR THERMAL PROCESSING PLATE, AND COMPUTER-READABLE STORAGE MEDIUM - A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values. | 10-23-2008 |
| 20090078695 | TEMPERATURE SETTING METHOD OF THERMAL PROCESSING PLATE, COMPUTER-READABLE RECORDING MEDIUM RECORDING PROGRAM THEREON, AND TEMPERATURE SETTING APPARATUS FOR THERMAL PROCESSING PLATE - A thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate for which a photolithography process has been finished are measured. The in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. Then, in-plane tendency components improvable by setting the temperature correction values are extracted from the calculated plurality of in-plane tendency components and added to calculate an improvable in-plane tendency in the measured line widths. Then, the improvable in-plane tendency is subtracted from the in-plane tendency Z of the current processing states to calculate an after-improvement in-plane tendency. | 03-26-2009 |
| 20090082911 | TEMPERATURE SETTING METHOD OF THERMAL PROCESSING PLATE, COMPUTER-READABLE RECORDING MEDIUM RECORDING GPROGRAM THEREON, AND TEMPERATURE SETTING APPARATUS FOR THERMAL PROCESSING PLATE - In the present invention, a thermal plate is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the wafer for which the photolithography process has been finished are first measured, and Zernike coefficients of a Zernike polynomial indicating a plurality of in-plane tendency components are calculated from the measured values of the line widths within the wafer. Then, the temperature correction values for the regions of the thermal plate to bring the calculated Zernike coefficients close to 0 are calculated using a calculation model indicating a correlation between change amounts of the Zernike coefficients and the temperature correction values. The temperature of each of the regions of the thermal plate is set based on each of the calculated temperature correction values. | 03-26-2009 |
| 20090214963 | SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM - The present invention has: a first step of measuring, as an initial condition of a substrate, any of a film thickness of a processing film on the substrate, a refractive index of the processing film, an absorption coefficient of the processing film, and a warpage amount of the substrate; a second step of estimating a dimension of a pattern of the processing film after predetermined processing from a previously obtained first relation between the initial condition and the dimension of the pattern of the processing film based on a measurement result of the initial condition; a third step of obtaining a correction value for a processing condition of the predetermined processing from a previously obtained second relation between the processing condition of the predetermined processing and the dimension of the pattern of the processing film based on an estimation result of the dimension of the pattern; a fourth step of correcting the processing condition of the predetermined processing based on the correction value; and a fifth step of performing predetermined processing on the substrate under the corrected processing condition to form the predetermined pattern in the processing film on the substrate. | 08-27-2009 |
| 20090269686 | SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM - A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern. | 10-29-2009 |
| 20110209826 | SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM - The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern. | 09-01-2011 |
| 20110242513 | SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM - A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern. | 10-06-2011 |
