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Masaharu Muramatsu, Shizuoka JP

Masaharu Muramatsu, Shizuoka JP

Patent application numberDescriptionPublished
20090243024WIRING BOARD AND SOLID-STATE IMAGING DEVICE - Provided are a wiring board capable of mounting either a frontside incident type solid-state imaging element and a backside incident type solid-state imaging element and a solid-state imaging device. The wiring board 10-01-2009
20100012820LIGHT DETECTING DEVICE - In a photodetecting device 01-21-2010
20100045841SOLID-STATE IMAGING ELEMENT - A solid-state image pickup device 02-25-2010
20100053388SOLID-STATE IMAGING DEVICE - A solid-state image pickup device comprising: a multilayer wiring board 03-04-2010
20100065742LIGHT DETECTING DEVICE - In a photodetecting device 03-18-2010
20100188564IMAGING DEVICE HOLDING STRUCTURE AND IMAGING DEVICE - A holding structure 07-29-2010
20110024606SOLID-STATE IMAGING DEVICE - A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register. The valve gate electrode is an electrode for preventing a transfer of a charge between the output register and the corner register.02-03-2011
20110024607SOLID-STATE IMAGING DEVICE - A solid-state imaging device 02-03-2011
20110024854SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION - A solid state imaging device includes a P-type semiconductor substrate 02-03-2011
20110025897SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION - A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode 02-03-2011
20110031377SOLID-STATE IMAGING DEVICE - A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided.02-10-2011
20110075005SOLID-STATE IMAGING DEVICE - A solid-state imaging device 03-31-2011

Patent applications by Masaharu Muramatsu, Shizuoka JP