Patent application number | Description | Published |
20080277674 | Semiconductor Light Emitting Device, Lighting Module, Lighting Apparatus, and Manufacturing Method of Semiconductor Light Emitting Device - An LED bare chip which is one type of a semiconductor light emitting device ( | 11-13-2008 |
20090014752 | SEMICONDUCTOR LIGHT SOURCE AND LIGHT-EMITTING DEVICE DRIVE CIRCUIT - A semiconductor light source includes a light-emitting device | 01-15-2009 |
20090045431 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A CURRENT-BLOCKING LAYER FORMED BETWEEN A SEMICONDUCTOR MULTILAYER FILM AND A METAL FILM AND LOCATED AT THE PERIPHERY., METHOD FOR FABRICATING THE SAME AND METHOD FOR BONDING THE SAME - A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer. | 02-19-2009 |
20090072221 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and having a larger band gap energy than the well layer; and a thin film layer provided between the well layer and the barrier layer. The thin film layer is formed during lowering of the substrate temperature after formation of the barrier layer or during elevation of the substrate temperature after formation of the well layer. | 03-19-2009 |
20090135875 | SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A semiconductor laser ( | 05-28-2009 |
20100019254 | SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHTING MODULE, LIGHTING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE - An LED bare chip which is one type of a semiconductor light emitting device ( | 01-28-2010 |
20100027575 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg | 02-04-2010 |
20100074290 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device has a stacked structure formed on a main surface of a substrate ( | 03-25-2010 |