| Patent application number | Description | Published |
|---|
| 20080242755 | Polyurethane polishing pad - The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity. | 10-02-2008 |
| 20100015895 | Chemical mechanical polishing pad having electrospun polishing layer - Chemical mechanical polishing pads having an electrospun polishing layer are provided, wherein the electrospun polishing layer has a polishing surface that is adapted for polishing a semiconductor substrate. Also provided are methods of making such chemical mechanical polishing pads and for using them to polish semiconductor substrates. | 01-21-2010 |
| 20100035529 | Chemical mechanical polishing pad - The polishing pad is for polishing patterned semiconductor substrates. The pad includes a polymeric matrix and hollow polymeric particles within the polymeric matrix. The polymeric matrix is a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH | 02-11-2010 |
| 20100099336 | Chemical mechanical polishing pad having integral identification feature - Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-polish active, wherein the unique integral identification feature comprises at least two visually distinct characteristics, wherein at least one of the at least two visually distinct indicia is a non-color based indicia, wherein one of the at least two visually distinct indicia is a color based indicia, and wherein the at least two visually distinct characteristics are selected to uniquely identify the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provided is a method of making such polishing layers and for using them to polish a substrate. | 04-22-2010 |
| 20100227533 | Chemical Mechanical Polishing Pad Having Window With Integral Identification Feature - Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. | 09-09-2010 |
| 20100317261 | Chemical mechanical polishing pad having a low defect integral window - A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad. | 12-16-2010 |
| 20110021123 | Multi-functional polishing pad - The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer. | 01-27-2011 |
| 20110054057 | Polyurethane polishing pad - The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity. | 03-03-2011 |
