Patent application number | Description | Published |
20080252892 | ABSORPTION SPECTROSCOPY APPARATUS AND METHOD - An absorption spectroscopy apparatus including an elliptical mirror centered on the midpoint between a source/detector and a mirror. The cavity between the elliptical mirror and the source/bolometer and mirror defines an interior volume of a sample cell. Electromagnetic radiation from the source/detector travels along a multi-segment path starting from the source/bolometer toward the elliptical mirror, reflecting off of the elliptical mirror and traveling toward the mirror, reflecting off of the mirror and traveling back toward the elliptical mirror and finally reflecting off the elliptical mirror for a second time and returning toward the source/bolometer. The multiple reflections combined with the focusing effects of the elliptical mirrored surface result in an efficient sampling device. Among other aspects and advantages, the apparatus of the present disclosure is able to use incoherent, non-collimated light sources while maintaining high optical throughput efficiencies. | 10-16-2008 |
20090236614 | TUNABLE PHOTONIC CRYSTAL - An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects. | 09-24-2009 |
20100038542 | Wideband Semiconducting Light Detector - A detector incorporating a laser-doped element that is favorably absorbing to at least a portion of the electromagnetic spectrum, for example in the infra-red range, is used in a light detector article. Readout circuits permitting a detector to operate in a substantial range of the electromagnetic spectrum, including the visual and infra-red range, enable day and night imaging in some embodiments. Configurations for making the detectors are also disclosed. | 02-18-2010 |
20100147383 | METHOD AND APPARATUS FOR LASER-PROCESSING A SEMICONDUCTOR PHOTOVOLTAIC APPARATUS - The present disclosure is directed to a method for automated manufacturing thin film solar cells including a laser processed layer. The method includes depositing a plurality of substantially planar layers in proximity with one another, including at least a first semiconductor layer, feeding the plurality of layers through a plurality of processing steps, irradiating at least a portion of a layer of the plurality of layers with a source of laser radiation, and using a control computer to control at least one of the acts of feeding and irradiating in the automated manufacture of the thin film solar cells. | 06-17-2010 |
20100224229 | MULTI-JUNCTION SEMICONDUCTOR PHOTOVOLTAIC APPARATUS AND METHODS - A multi-junction thin film semiconductor photovoltaic devices having improved absorption properties and increased efficiencies and methods for making the same are disclosed. | 09-09-2010 |
20110121424 | LOW OXYGEN CONTENT SEMICONDUCTOR MATERIAL FOR SURFACE ENHANCED PHOTONIC DEVICES AND ASSOCIATED METHODS - Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation-absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C. to about 1100° C., wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment. | 05-26-2011 |
20110203648 | LASER PROCESSED HETEROJUNCTION PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS - Heterojunction devices and associated methods of making and using are provided. In one aspect, for example, a heterojunction photovoltaic device can include a crystalline semiconductor layer, a first doped semiconductor layer coupled to the crystalline semiconductor layer, and a second doped semiconductor layer coupled to the crystalline semiconductor layer opposite the first doped semiconductor layer. The first and second doped semiconductor layers form junctions with the semiconductor layer. The device can further include a laser processed semiconductor region coupled to the crystalline semiconductor layer. | 08-25-2011 |
20110260059 | PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS - A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation. | 10-27-2011 |
20110265875 | COPPER AND INDIUM BASED PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS - Optoelectronic devices having enhanced conversion efficiencies and associated methods are provided. In one aspect, for example, a method of making an optoelectronic device can include applying an absorption layer onto a support substrate, the absorption layer including a material such as CIGS, CIG, CI, CZT, CdTe, and combinations thereof. Additional steps include providing a element-rich environment in proximity to the absorption layer, and irradiating at least a portion of the absorption layer with laser radiation through the element-rich environment thereby incorporating the element into the absorption layer. | 11-03-2011 |
20120068289 | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods - Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer. | 03-22-2012 |
20120291859 | Multi-Junction Semiconductor Photovoltaic Apparatus and Methods - A photovoltaic device and methods of manufacturing a photovoltaic device are disclosed. A photovoltaic device includes a first photovoltaic cell, a second photovoltaic cell, a semiconductor layer, and a doped layer. The second photovoltaic cell is in electrical communication with the first photovoltaic cell. The semiconductor layer includes a textured portion. The doped layer is configured to create a back surface field, the doped layer disposed between a proximal layer of the second photovoltaic cell and the semiconductor layer. | 11-22-2012 |
20130016203 | BIOMETRIC IMAGING DEVICES AND ASSOCIATED METHODS - A system for identifying an individual can include an active light source capable of emitting light having at least one wavelength from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation and process the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region positioned to interact with the light, and can have an external quantum efficiency of at least about 33% for at least one wavelength of greater than 800 nm. | 01-17-2013 |
20140027774 | Laser Processed Photovoltaic Devices and Associated Methods - Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate. A second semiconductor layer can be coupled to the second intrinsic semiconductor layer opposite the second textured region, where the second semiconductor layer is doped to a same polarity as the semiconductor substrate but having a higher dopant concentration as the semiconductor substrate. | 01-30-2014 |
20140138785 | PIXEL ISOLATION ELEMENTS, DEVICES, AND ASSOCIATED METHODS - Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel. | 05-22-2014 |
20140332665 | PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS - A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation. | 11-13-2014 |