Patent application number | Description | Published |
20080290445 | Method for manufacturing a semiconductor body with a trench and semiconductor body with a trench - A method for manufacturing a semiconductor body with a trench comprises the steps of etching the trench ( | 11-27-2008 |
20090098718 | Multiple mask and method for producing differently doped regions - In order to produce doping regions (DG) in a substrate (S) having different dopings with the aid of a single mask (DM) different mask regions are provided which have elongated mask openings (MO) having different orientations relative to the spatial direction of an oblique implantation. The substrate is rotated between the first and second oblique implantations, wherein during the first oblique implantation maximum and minimum shadings in the different mask regions are opposite one another and the conditions are precisely reversed during the second oblique implantation after the rotation of the substrate. | 04-16-2009 |
20090212360 | High-Voltage Transistor and Method for its Manufacture - A high-voltage transistor is provided with a well of a first conductivity type, which is arranged in a substrate ( | 08-27-2009 |
20090215235 | Arrangement with Two Transistors and Method for the Production Thereof - A transistor and a method for the fabrication of transistors with different gate oxide thicknesses is proposed, in which for the doping of the source, the typical LDD implantation, which is formed after the fabrication of the gate electrode, is replaced by a doping step, which is generated before applying the gate stack. In this way that is already a component of the remaining process sequence in the fabrication of the transistor doping can be used. | 08-27-2009 |
20090302383 | High-Voltage Transistor and Component Containing the Latter - In a high-voltage NMOS transistor with low threshold voltage, it is proposed to realize the body doping that defines the channel region in the form of a deep p-well, and to arrange an additional shallow p-doping as a channel stopper on the transistor head, wherein this additional shallow p-doping is produced in the semiconductor substrate at the end of the deep p-well that faces away from the channel region, and extends up to a location underneath a field oxide region that encloses the active window. The leakage current of the parasitic transistor at the transistor head is suppressed with the channel stopper. | 12-10-2009 |
20090321822 | HIGH-VOLTAGE TRANSISTOR WITH IMPROVED HIGH STRIDE PERFORMANCE - A high voltage NMOS transistor is disclosed where the p-doped body is isolated against the p-doped substrate by a DN well having a pinch-off region where the depth of the DN-well is at minimum. By the forming space charge region at raising drain potentials a shielding of the drain potential results because the space charge region touches the field oxide between source and drain at the pinch-off region. An operation at the high side at enhanced voltage levels is possible. | 12-31-2009 |
20100117162 | Semiconductor Body and Method for the Design of a Semiconductor Body with a Connecting Line - A semiconductor body ( | 05-13-2010 |
20130168769 | P-CHANNEL LDMOS TRANSISTOR AND METHOD OF PRODUCING A P-CHANNEL LDMOS TRANSISTOR - The p-channel LDMOS transistor comprises a semiconductor substrate ( | 07-04-2013 |