Patent application number | Description | Published |
20090214798 | APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING - Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region. | 08-27-2009 |
20110048644 | PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE - Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended. | 03-03-2011 |
20110120505 | APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING - Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region. | 05-26-2011 |
20130105085 | PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL | 05-02-2013 |
20130105088 | THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING | 05-02-2013 |
20130206594 | PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE - Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended. | 08-15-2013 |
20130284287 | APPARATUS FOR UNIFORM PUMPING WITHIN A SUBSTRATE PROCESS CHAMBER - Substrate supports for use in process chambers having limited physical space for configuring chamber components are disclosed. In some embodiments, a substrate support may include a body having a support surface; a utilities feed coupled to the body and comprising a second portion coupled to and extending laterally away from the body beyond a diameter of the body, and first portion coupled to the second portion and extending perpendicularly away from the body; and a cover plate movably disposable beneath and with respect to the body between a first position disposed completely beneath the body, and a second position wherein the cover plate is disposed over the first portion of the utilities feed and includes a first portion disposed beneath the body, and wherein the first portion has a curved edge having a radius equal to the distance from a central axis of the support surface to the curved edge. | 10-31-2013 |
20140076850 | METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS - A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line. | 03-20-2014 |
20150063405 | SUBSTRATE PLACEMENT DETECTION IN SEMICONDUCTOR EQUIPMENT USING THERMAL RESPONSE CHARACTERISTICS - Methods and apparatus for determining proper placement of a substrate upon a substrate support in a process chamber are disclosed. In some embodiments, a method for detecting substrate placement in a process chamber includes placing a substrate on a support surface of a substrate support with the process chamber; modifying a pressure within the chamber to create a detection pressure within the chamber; sensing a first temperature of the substrate support; monitoring a thermal response characteristic of the substrate support after placing the substrate on the substrate support; comparing the thermal response characteristic to a predetermined response characteristic; and determining whether the substrate is placed correctly based upon the comparison of the thermal response characteristic to the predetermined response characteristic. | 03-05-2015 |