Patent application number | Description | Published |
20080224297 | Apparatus comprising a device and method for producing it - An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure. | 09-18-2008 |
20080297278 | Bulk Acoustic Wave Device with Coupled Resonators - A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel. | 12-04-2008 |
20090064477 | PIEZOELECTRIC OSCILLATING CIRCUIT, METHOD FOR MANUFACTURING THE SAME AND FILTER ARRANGEMENT - In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction. | 03-12-2009 |
20090265903 | Coupled Resonator Device and Method for Manufacturing a Coupled Resonator Device - A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate. | 10-29-2009 |
20090295506 | Bulk Acoustic Wave Device and a Method of its Manufacturing - A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed. | 12-03-2009 |
20100107389 | METHOD OF FABRICATING AN ELECTRODE FOR A BULK ACOUSTIC RESONATOR - In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer. | 05-06-2010 |
20110042764 | APPARATUS COMPRISING A DEVICE AND METHOD FOR PRODUCING SAME - An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure. | 02-24-2011 |
20110128092 | DUPLEXER WITH NEGATIVE PHASE SHIFTING CIRCUIT - A duplexer includes first and second acoustic filters and a phase shifter. The first acoustic filter is connected between an antenna and the transmitter, and has a first passband. The second acoustic filter is connected between the antenna and the receiver, and has a second passband. The phase shifter includes at least one series capacitor connected in series with the antenna and at least one shunt inductor connected between the at least one capacitor and ground. The phase shifter is connected between the antenna and the first filter when the first passband is higher than the second passband, and provides a negative phase shift of an output impedance of the first filter. The phase shifter is connected between the antenna and the second filter when the second passband is higher than the first passband, and provides a negative phase shift of an input impedance of the second filter. | 06-02-2011 |
20120319530 | BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER - In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer. | 12-20-2012 |
20130043961 | DUPLEXER WITH SHIELDING BONDWIRES BETWEEN FILTERS - A duplexer includes first and second filters, and a first shielding bondwire. The first filter includes a first bondwire connecting the first filter to a printed circuit board, the first bondwire forming a portion of a first virtual loop having a first virtual area, where first current passing through the first bondwire generates a first magnetic field. The second filter includes a second bondwire connecting the second filter to the printed circuit, the second bondwire forming a portion of a second virtual loop having a second virtual area. The first shielding bondwire includes first and second ends connected to a conductor of the printed circuit board to form a closed electrical first shielding loop having a corresponding first shielding area. The magnetic field induces shielding current in the first shielding loop, which generates a first compensating magnetic field that attenuates the first magnetic field. | 02-21-2013 |