Patent application number | Description | Published |
20080214004 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device and semiconductor device. One embodiment provides a semiconductor substrate with an active region and a margin region bordering on the active region. The spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region using a common process. The location is selected such that at least part of the semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate. | 09-04-2008 |
20080230833 | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT - A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions. | 09-25-2008 |
20080265427 | Anchoring Structure and Intermeshing Structure - An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure. | 10-30-2008 |
20080296668 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device has a substrate having a plurality of neighboring trenches, and a contact area, one mesa stripe each being formed between two neighboring trenches. The contact area contacts mesa stripes and surrounds an opening region in which the contact area is not formed and which is formed such that the contact area contacts the same mesa stripes at two positions between which the opening region is arranged, and the opening region having a region of elongate extension which intersects the mesa stripes in a skewed or perpendicular manner. | 12-04-2008 |
20090039419 | SEMICONDUCTOR COMPONENT WITH DYNAMIC BEHAVIOR - One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches. | 02-12-2009 |
20090061595 | METHOD FOR DIVIDING A SEMICONDUCTOR SUBSTRATE AND A METHOD FOR PRODUCING A SEMICONDUCTOR CIRCUIT ARRANGEMENT - A method for dividing a semiconductor substrate involves providing a semiconductor substrate. At least one separating trench is produced at a front side of the semiconductor substrate. A layer is produced at least at the bottom of the at least one separating trench. The semiconductor substrate is thinned at a rear side of the semiconductor substrate at least as far as the layer at the bottom of the at least one separating trench. The layer is severed in order to divide the semiconductor substrate into individual pieces. | 03-05-2009 |
20090166720 | SEMICONDUCTOR DEVICE, METHOD FOR OPERATING A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having at least a pn-junction arranged in the semiconductor substrate. At least a field electrode is arranged at least next to a portion of the pn-junction, wherein the field electrode is insulated from the semiconductor substrate. A switching device is electrically connected to the field electrode and adapted to apply selectively and dynamically one of a first electrical potential and a second electrical potential, which is different to the first electrical potential, to the field electrode to alter the avalanche breakdown characteristics of the pn-junction. | 07-02-2009 |
20090166727 | POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER - A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage. | 07-02-2009 |
20090166729 | POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER - A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage. | 07-02-2009 |
20090206401 | TRENCH TRANSISTOR AND METHOD FOR FABRICATING A TRENCH TRANSISTOR - A trench transistor having a semiconductor body, in which a trench structure and an electrode structure embedded in the trench structure is disclosed. The electrode structure is electrically insulated from the semiconductor body by an insulation structure. The electrode structure has a gate electrode structure and a field electrode structure arranged below the gate electrode structure and electrically insulated from the latter. There is provided between the gate electrode structure and the field electrode structure a shielding structure for reducing the capacitive coupling between the gate electrode structure and the field electrode structure. | 08-20-2009 |
20090218621 | SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION - A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region. | 09-03-2009 |
20090230561 | SEMICONDUCTOR DEVICE - A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source. The source metal contact includes a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows. | 09-17-2009 |
20100078716 | Semiconductor component and method for producing a semiconductor component - A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench. | 04-01-2010 |
20100155879 | SEMICONDUCTOR DEVICE - A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area. | 06-24-2010 |
20100207206 | TRANSISTOR - A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array. | 08-19-2010 |
20100264462 | SEMICONDUCTOR INCLUDING LATERAL HEMT - A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate. Furthermore, the lateral HEMT has a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer. In addition, the lateral HEMT has a third layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type, and is arranged at least partially in the first layer. | 10-21-2010 |
20100270620 | System and Method for Constructing Shielded Seebeck Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 10-28-2010 |
20110089528 | SEMICONDUCTOR HAVING OPTIMIZED INSULATION STRUCTURE AND PROCESS FOR PRODUCING THE SEMICONDUCTOR - A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate. | 04-21-2011 |
20110095336 | LATERAL HEMT AND METHOD FOR THE PRODUCTION OF A LATERAL HEMT - In one embodiment a lateral HEMT has a first layer, the first layer including a semiconducting material, and a second layer, the second layer including a semiconducting material and being at least partially arranged on the first layer. The lateral HEMT further has a passivation layer and a drift region, the drift region including a lateral width w | 04-28-2011 |
20110147796 | SEMICONDUCTOR DEVICE WITH METAL CARRIER AND MANUFACTURING METHOD - Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of Al | 06-23-2011 |
20110163366 | Semiconductor Component Arrangement Comprising a Trench Transistor - Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps. | 07-07-2011 |
20110165755 | Semiconductor Component Arrangement Comprising a Trench Transistor - Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps. | 07-07-2011 |
20110278667 | SEMICONDUCTOR COMPONENT ARRANGEMENT AND METHOD FOR PRODUCING THEREOF - A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged. | 11-17-2011 |
20110294289 | Method for Producing a Connection Electrode for Two Semiconductor Zones Arranged One Above Another - A method for producing a connection electrode for a first and second adjacent and complementarily doped semiconductor zones includes a step of producing a trench extending through the first semiconductor zone into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes producing a first connection zone in the first semiconductor zone by implanting dopant atoms into the sidewalls at least at a first angle. The method further includes producing a second connection zone in the second semiconductor zone by implanting dopant atoms at least at a second, different angle. The method also includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode. | 12-01-2011 |
20120032260 | ELECTRONIC DEVICE WITH CONNECTING STRUCTURE - A semiconductor device including a connecting structure includes an edge region, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region. | 02-09-2012 |
20120175687 | System and Method for Manufacturing a Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 07-12-2012 |
20120211891 | Anchoring Structure and Intermeshing Structure - An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure. | 08-23-2012 |
20120299092 | SEMICONDUCTOR COMPONENT ARRANGEMENT AND METHOD FOR PRODUCING THEREOF - A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged. | 11-29-2012 |
20120309147 | Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component is produced by forming a trench in a semiconductor region. The trench has an upper trench region and a lower trench region. The upper trench region is wider than the lower trench region such that a step is formed in the semiconductor region. A dopant is introduced into the step to form a locally delimited dopant region in the semiconductor region. | 12-06-2012 |
20120319761 | METHOD FOR OPERATING A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having at least a pn-junction arranged in the semiconductor substrate. At least a field electrode is arranged at least next to a portion of the pn-junction, wherein the field electrode is insulated from the semiconductor substrate. A switching device is electrically connected to the field electrode and adapted to apply selectively and dynamically one of a first electrical potential and a second electrical potential, which is different to the first electrical potential, to the field electrode to alter the avalanche breakdown characteristics of the pn-junction. | 12-20-2012 |
20130075724 | SEMICONDUCTOR ARRANGEMENT WITH AN INTEGRATED HALL SENSOR - A semiconductor arrangement includes a semiconductor body and a semiconductor device, the semiconductor device including first and second load terminals arranged distant to each other in a first direction of the semiconductor body and a load path arranged in the semiconductor body between the first and second load terminals. The semiconductor arrangement further includes at least one Hall sensor arranged in the semiconductor body distant to the semiconductor device in a second direction perpendicular to the first direction. The Hall sensor includes two current supply terminals and two measurement terminals. | 03-28-2013 |
20130075790 | SEMICONDUCTOR INCLUDING LATERAL HEMT - A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate. Furthermore, the lateral HEMT has a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer. In addition, the lateral HEMT has a third layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type, and is arranged at least partially in the first layer. | 03-28-2013 |
20130075814 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR VIA - A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor body to the second surface. The semiconductor via is electrically insulated from the semiconductor body by a via insulation layer. The at least one electrode extends in a first lateral direction of the semiconductor body through the via insulation layer and is electrically connected to the semiconductor via. | 03-28-2013 |
20130099308 | Semiconductor Device Having a Through Contact and a Manufacturing Method Therefor - According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material. | 04-25-2013 |
20130230956 | Trench Electrode Arrangement - A method includes forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that a first trench section and at least one second trench section adjoin the first trench section, wherein the first trench section is wider than the second trench section. A first electrode is formed, in the at least one second trench section, and dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer. An inter-electrode dielectric layer is formed, in the at least one second trench section, on the first electrode. A second electrode is formed, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, such that the second electrode at least in the first trench section is dielectrically insulated from the semiconductor body by a second dielectric layer. | 09-05-2013 |
20130240985 | Semiconductor Device Including Auxiliary Structure and Methods for Manufacturing A Semiconductor Device - A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure including a first step and a second step along a lateral side of the trench region. The semiconductor device further includes an auxiliary structure of a first conductivity type between the first step and the second step, a gate electrode in the trench region and a body region of a second conductivity type other than the first conductivity type of the drift zone. The auxiliary structure adjoins each one of the drift zone, the body region and the dielectric structure. | 09-19-2013 |
20130240986 | Semiconductor Device Including Charged Structure and Methods for Manufacturing A Semiconductor Device - A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along a lateral side of the trench region, wherein a part of the dielectric structure is a charged insulating structure. The semiconductor device further includes a gate electrode in the trench region and a body region of a conductivity type other than the conductivity type of the drift zone. The charged insulating structure adjoins each one of the drift zone, the body region and the dielectric structure and further adjoins or is arranged below a bottom side of a gate dielectric of the dielectric structure. | 09-19-2013 |
20130248993 | Stress-Reduced Field-Effect Semiconductor Device and Method for Forming Therefor - A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body. The vertical trench includes a field electrode, a cavity at least partly surrounded by the field electrode, and an insulation structure substantially surrounding at least the field electrode. Further, a method for producing a field-effect semiconductor device is provided. | 09-26-2013 |
20130252423 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device and semiconductor device. One embodiment provides a semiconductor substrate with an active region and a margin region bordering on the active region. The spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region using a common process. The location is selected such that at least part of the semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate. | 09-26-2013 |
20130264580 | Lateral High Electron Mobility Transistor With Schottky Junction - A lateral HEMT includes a first semiconductor layer on a second semiconductor layer, a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer, and a rectifying Schottky junction. The rectifying Schottky junction has a first terminal electrically coupled to a source electrode and a second terminal electrically coupled to the second semiconductor layer. | 10-10-2013 |
20130307062 | Vertical Transistor Component - A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode. | 11-21-2013 |
20130307127 | Semiconductor Device Including A Silicate Glass Structure and Method of Manufacturing A Semiconductor Device - A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. | 11-21-2013 |
20130313636 | TERMINATION ARRANGEMENT FOR VERTICAL MOSFET - Representative implementations of devices and techniques provide a termination arrangement for a transistor structure. The periphery of a transistor structure may include a recessed area having features arranged to improve performance of the transistor at or near breakdown. | 11-28-2013 |
20130320915 | Gated Diode, Battery Charging Assembly and Generator Assembly - A gated diode may include source zones and a drain zone which are both of a first conductivity type. The source zones directly adjoin a first surface of a semiconductor die and the drain zone directly adjoins an opposite second surface of the semiconductor die. The drain zone includes a drift zone formed in an epitaxial layer of the semiconductor die. Base zones of a second conductivity type, which is the opposite of the first conductivity type, are provided between the drain zones and the source zones. The drift zone further includes adjustment zones directly adjoining a base zone and arranged between the respective base zone and the second surface, respectively. A net dopant concentration in the adjustment zone is at least twice a net dopant concentration in the second sub-zone. The adjustment zones precisely define the reverse breakdown voltage. | 12-05-2013 |
20130323905 | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT - A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench. | 12-05-2013 |
20140001528 | SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION | 01-02-2014 |
20140015046 | Current Sense Transistor with Embedding of Sense Transistor Cells - A semiconductor device a field of transistor cells integrated in a semiconductor body. A number of the transistor cells forming a power transistor and at least one of the transistor cells forming a sense transistor. A first source electrode is arranged on the semiconductor body electrically connected to the transistor cell(s) of the sense transistor but electrically isolated from the transistor cells of the power transistor. A second source electrode is arranged on the semiconductor body and covers the transistor cells of both the power transistor and the sense transistor, and at least partially covering the first source electrode in such a manner that the second source electrode is electrically connected only to the transistor cells of the power transistor but electrically isolated from the transistor cells of the sense transistor. | 01-16-2014 |
20140027772 | Wafers and Chips Comprising Test Structures - Wafers with chips thereon and corresponding chips are provided where test structures or parts thereof are provided in a peripheral chip area of the chip. Corresponding methods are also disclosed. | 01-30-2014 |
20140042597 | SEMICONDUCTOR DEVICE INCLUDING A STRESS RELIEF LAYER AND METHOD OF MANUFACTURING - A semiconductor device includes a main body having a single crystalline semiconductor body. A layered structure directly adjoins a central portion of a main surface of the main body and includes a hard dielectric layer provided from a first dielectric material with Young's modulus greater than 10 GPa. A stress relief layer directly adjoins the layered structure opposite to the main body and extends beyond an outer edge of the layered structure. Providing the layered structure at a distance to the edge of the main body and covering the outer surface of the layered structures with the stress relief layer enhances device reliability. | 02-13-2014 |
20140048871 | Trench Connection Between a Transistor and a Further Component - A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component. | 02-20-2014 |
20140048904 | Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof - One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench. | 02-20-2014 |
20140073123 | Method for Producing a Controllable Semiconductor Component - Disclosed is a method for producing a controllable semiconductor component. In a semiconductor body with a top side and a bottom side, a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body are formed in a common etching process. The first trench has a first width and the second trench has a second width greater than the first width. Then, in a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. Subsequently, the oxide layer is removed from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench. | 03-13-2014 |
20140077262 | CHIP EDGE SEALING - The invention relates to a semiconductor component comprising a semiconductor body, an insulation on the semiconductor body and a cell array arranged at least partly within the semiconductor body. The cell array has at least one p-n junction and at least one contact connection. The insulation is bounded in lateral direction of the semiconductor body by a circumferential diffusion barrier. | 03-20-2014 |
20140084362 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - A semiconductor device includes a transistor including a source region, a drain region, and a gate electrode. The gate electrode is disposed in a first trench arranged in a top surface of the semiconductor substrate. The device further includes a control electrode. The control electrode is disposed in a second trench arranged in the top surface of the semiconductor substrate. The second trench has a second shape that is different from a first shape of the first trench. | 03-27-2014 |
20140096998 | Electrical Contact Pad - In various embodiments, an electrical contact pad is provided, wherein the electrical contact pad has at least two regions which are electrically separated from one another. | 04-10-2014 |
20140097431 | SEMICONDUCTOR DEVICES AND PROCESSING METHODS - A method for processing a semiconductor device in accordance with various embodiments may include: providing a semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second pad; and electrically connecting the first pad and the second pad to one another after applying the at least one electrical test potential. | 04-10-2014 |
20140097863 | TEST METHOD AND TEST ARRANGEMENT - A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least one device cell, the at least one device cell having at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode may be controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell. | 04-10-2014 |
20140167043 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner. | 06-19-2014 |
20140167044 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner. | 06-19-2014 |
20140167154 | Transistor Cell Array Including Semiconductor Diode - One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. A width w | 06-19-2014 |
20140167155 | SEMICONDUCTOR COMPONENT ARRANGEMENT AND METHOD FOR PRODUCING THEREOF - A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged. | 06-19-2014 |
20140167209 | Method of Manufacturing a Semiconductor Device and a Semiconductor Workpiece - A semiconductor device is manufactured in a semiconductor substrate comprising a first main surface, the semiconductor substrate including chip areas. The method of manufacturing the semiconductor substrate comprises forming components of the semiconductor device in the first main surface in the chip areas, removing substrate material from a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface, forming a separation trench into a first main surface of the semiconductor substrate, the separation trench being disposed between adjacent chip areas. The method further comprises forming at least one sacrificial material in the separation trench, and removing the at least one sacrificial material from the trench. | 06-19-2014 |
20140184306 | Method for Operating Field-Effect Transistor, Field-Effect Transistor and Circuit Configuration - A method for operating a field-effect transistor having a source terminal, a drain terminal, a gate terminal, a drift region and a dielectric region adjoining the drift region, is provided. The method includes: connecting at least one of the drain terminal and the source terminal to a load; applying a sequence of voltage pulses between the gate terminal and the source terminal to repetitively switch the field-effect transistor such that the field-effect transistor is driven in an avalanche mode between the voltage pulses, during the avalanche mode avalanche multiplication occurring in the drift region close to the dielectric region; and applying at least one relaxation pulse to the field-effect transistor to reduce an accumulation of charges in the dielectric region due to hot charge carriers generated in the avalanche mode. Further, a field-effect transistor and a circuit configuration including the field-effect transistor are provided. | 07-03-2014 |
20140209905 | Integrated Circuit, Semiconductor Device and Method of Manufacturing a Semiconductor Device - An integrated circuit including a semiconductor device has a power component including a plurality of trenches in a cell array, the plurality of trenches running in a first direction, and a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component. The integrated circuit further includes isolation trenches disposed between the sensor component and the power component, an insulating material being disposed in the isolation trenches. The isolation trenches run in a second direction that is different from the first direction. | 07-31-2014 |
20140251408 | System and Method for Manufacturing a Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 09-11-2014 |
20140291816 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A CONTINUOUS SILICATE GLASS STRUCTURE - A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure. | 10-02-2014 |
20140299972 | SEMICONDUCTOR DEVICE HAVING A THROUGH CONTACT - A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa. | 10-09-2014 |
20140315391 | Method of Manufacturing a Semiconductor Device Including a Stress Relief Layer - A method of manufacturing a semiconductor device includes providing a layered structure having a hard dielectric layer containing a first dielectric material having a Young's modulus greater than 10 GPa in a central portion of a main surface of a main body comprising a single crystalline semiconductor body, and providing a dielectric stress relief layer containing a second dielectric material having a lower Young's modulus than the first dielectric material, the stress relief layer covering the layered structure and extending beyond an outer edge of the layered structure. | 10-23-2014 |
20140327053 | Semiconductor Device Including Trench Transistor Cell Array and Manufacturing Method - A semiconductor device includes a trench transistor cell array in a silicon semiconductor body with a first main surface and a second main surface opposite to the first main surface. A main lateral face of the semiconductor body between the first main surface and the second main surface has a first length along a first lateral direction parallel to the first and second main surfaces. The first length is equal or greater than lengths of other lateral faces of the semiconductor body. The trench transistor cell array includes predominantly linear gate trench portions. At least 50% of the linear gate trench portions extend along a second lateral direction or perpendicular to the second lateral direction. An angle between the first and second lateral directions is in a range of 45°±15°. | 11-06-2014 |
20140335667 | SEMICONDUCTOR DEVICE - A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source. The source metal contact includes a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows. | 11-13-2014 |
20140346509 | Semiconductor Component with Integrated Crack Sensor and Method for Detecting a Crack in a Semiconductor Component - A first embodiment relates to a semiconductor component. The semiconductor component has a semiconductor body with a bottom side and a top side spaced distant from the bottom side in a vertical direction. In the vertical direction, the semiconductor body has a certain thickness. The semiconductor component further has a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body. | 11-27-2014 |
20140357048 | Method for Producing a Semiconductor Component - Methods for producing a semiconductor component that includes a transistor having a cell structure with a number of transistor cells monolithically integrated in a semiconductor body and electrically connected in parallel. In an example method, first trenches extending from the top side into the semiconductor body are produced, as are second trenches that each extend from the top side deeper into the semiconductor body than each of the first trenches. A first dielectric abutting on a first portion of the semiconductor body is produced at a surface of each of the first trenches. Also produced is a second dielectric at a surface of each of the second trenches. In each of the first trenches, a gate electrode is produced, after which a second portion of the semiconductor body is electrically insulated from the first portion of the semiconductor body by removing a bottom layer of the semiconductor body. | 12-04-2014 |
20150028408 | Integrated Circuit and Method of Manufacturing an Integrated Circuit - An integrated circuit is formed in a semiconductor substrate. The integrated circuit includes a trench formed in a first main surface of the semiconductor substrate. The trench includes a first trench portion and a second trench portion. The first trench portion is connected with the second trench portion. Openings of the first and second trench portions are adjacent to the first main surface. The integrated circuit further includes a trench transistor structure including a gate electrode disposed in the first trench portion, and a trench capacitor structure including a capacitor dielectric and a first capacitor electrode. The capacitor dielectric and the first capacitor electrode are disposed in the second trench portion. The first capacitor electrode includes a layer conformal with a sidewall of the second trench portion. | 01-29-2015 |
20150028412 | SEMICONDUCTOR DEVICE - A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area. | 01-29-2015 |
20150028416 | SEMICONDUCTOR COMPONENT WITH DYNAMIC BEHAVIOR - One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches. | 01-29-2015 |
20150061003 | Power Semiconductor Package - A power semiconductor package includes a housing, a semiconductor chip embedded in the housing, and at least four terminals partially embedded in the housing and partially exposed to the outside of the housing. The semiconductor chip includes a first doping region in ohmic contact with a first metal layer, a second doping region in ohmic contact with a second metal layer, and a plurality of first trenches that includes gate electrodes and first field electrodes electrically insulated from the gate electrodes. A first terminal of the four terminals is electrically connected to the first metal layer, a second terminal of the four terminals is electrically connected to the second metal layer, a third terminal of the four terminals is electrically connected to the gate electrodes of the first trenches, and a fourth terminal of the four terminals is electrically connected to the first field electrodes of the first trenches. | 03-05-2015 |
20150064879 | Separation of Chips on a Substrate - Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts. | 03-05-2015 |
20150069394 | Semiconductor Device and Method for Manufacturing a Semiconductor Device - A device includes a semiconductor chip. An outline of a frontside of the semiconductor chip includes at least one of a polygonal line including two line segments joined together at an inner angle of greater than 90° and an arc-shaped line. | 03-12-2015 |
20150079749 | TERMINATION ARRANGEMENT FOR VERTICAL MOSFET - Representative implementations of devices and techniques provide a termination arrangement for a transistor structure. The periphery of a transistor structure may include a recessed area having features arranged to improve performance of the transistor at or near breakdown. | 03-19-2015 |