Patent application number | Description | Published |
20120168809 | OPTOELECTRONIC SEMICONDUCTOR BODY AND OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence. | 07-05-2012 |
20120267662 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip comprises a semiconductor body ( | 10-25-2012 |
20120319299 | Semiconductor Diode and Method for Producing a Semiconductor Diode - A semiconductor diode has a first semiconductor layer ( | 12-20-2012 |
20130146910 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence. | 06-13-2013 |
20130221390 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip having a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light-emitting diode chip has, on a front side, a radiation exit surface, at least regions of the light-emitting diode chip have, on a rear side opposite the radiation exit surface, a mirror layer containing silver, a protective layer containing Pt is disposed on the mirror layer, and the protective layer has a structure that covers the mirror layer only in sub-regions. | 08-29-2013 |
20130228819 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip. | 09-05-2013 |
20140021507 | Optoelectronic Semiconductor Chip and Method for Producing Optoelectronic Semiconductor Chips - An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body. | 01-23-2014 |
20140027805 | Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip has an epitaxial layer sequence. A doped epitaxial layer of the epitaxial layer sequence has a first region and a second region and a protected structure. The first region of the doped epitaxial layer completely covers the protected structure. The outer surface of the doped epitaxial layer has a first roughness in the first region and a second roughness in the second region. | 01-30-2014 |
20140061676 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND COMPONENT PRODUCED IN SUCH MANNER - A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge. | 03-06-2014 |
20140138730 | Method of Producing a Plurality of Optoelectronic Semiconductor Chips - A method of producing a plurality of optoelectronic semiconductor chips is provided. At least one trench is incorporated into the semiconductor body by means of at least one structuring process. The trench breaks through the active zone in a vertical direction. At least one cleaning process is performed at least on exposed locations of the semiconductor body in the region of the trench. The cleaning process includes at least one plasma cleaning process, and the plasma cleaning process at least reduces a number and/or a spatial expansion of structuring residues at exposed locations of the semiconductor body at least in the region of the trench. At least one passivation layer is applied at least to exposed locations of the semiconductor body in the region of the trench. | 05-22-2014 |
20140197435 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side | 07-17-2014 |
20140319566 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide. | 10-30-2014 |