Patent application number | Description | Published |
20110043215 | SINGLE LEVEL OF METAL TEST STRUCTURE FOR DIFFERENTIAL TIMING AND VARIABILITY MEASUREMENTS OF INTEGRATED CIRCUITS - A test structure for an integrated circuit device includes one or more experiments selectively configured to receive one or more high-speed input signals as inputs thereto and to output at least one high-speed output signal therefrom, the one or more experiments each comprising two or more logic gates configured to determine differential delay characteristics of individual circuit devices, at a precision level on the order of picoseconds to less than 1 picosecond; and wherein the one or more sets of experiments are disposed, and are fully testable, at a first level of metal wiring (M | 02-24-2011 |
20110043242 | ACQUISITION OF SILICON-ON-INSULATOR SWITCHING HISTORY EFFECTS STATISTICS - A test structure for gathering switching history effect statistics includes a waveform generator circuit that selectively generates a first test waveform representative of a 1SW transistor switching event, and a second test waveform representative of a 2SW transistor switching event; and a history element circuit coupled to the waveform generator circuit, the history element circuit including a device under test (DUT) therein, and a variable delay chain therein, wherein a selected one of the first and second test waveforms are input to the DUT and the variable delay chain; wherein the history element circuit determines fractional a change in signal propagation delay through the DUT between the 1SW and 2SW transistor switching events, with the fractional change in signal propagation delay calibrated with timing measurements of a variable frequency ring oscillator; and wherein the test structure utilizes only external low-speed input and output signals with respect to a chip. | 02-24-2011 |
20110043243 | MEASUREMENT OF PARTIALLY DEPLETED SILICON-ON-INSULATOR CMOS CIRCUIT LEAKAGE CURRENT UNDER DIFFERENT STEADY STATE SWITCHING CONDITIONS - A test system for determining leakage of an integrated circuit (IC) under test includes a test circuit formed on a same chip as the IC, the test circuit further having pulse generator configured to generate a high-speed input signal to the IC at a plurality of selectively programmable duty cycles and frequencies, the IC powered from a first power source independent from a second power source that powers the pulse generator; and a current measuring device configured to measure leakage current through the IC in a quiescent state, and current through the IC in an active switching state, responsive to the high-speed input signal at a plurality of the programmable duty cycles and frequencies, and wherein the test circuit utilizes only external low-speed input and output signals with respect to the chip. | 02-24-2011 |
Patent application number | Description | Published |
20080270064 | M1 Testable Addressable Array for Device Parameter Characterization - An integrated circuit device and device parameter characterization method are provided. The integrated circuit device has a padset with plurality of pads. The integrated circuit device also includes one or more arrays of devices under test, each of the one or more arrays disposed between two of the plurality of pads. The integrated circuit device further includes one or more n-bit decoders, each disposed between two of the plurality of pads and electrically coupled to a corresponding one of the one or more arrays. Each n-bit decoder comprises one or more outputs that deliver a defined voltage to each device under test in the corresponding one of the one or more arrays of devices under test. The integrated circuit device and corresponding electrical connections are implemented in a single level of metal. | 10-30-2008 |
20090096461 | TEST STRUCTURE AND METHOD FOR RESISTIVE OPEN DETECTION USING VOLTAGE CONTRAST INSPECTION - A test structure for resistive open detection using voltage contrast (VC) inspection and method for using such structure are disclosed. The test structure may include a comparator within the IC chip for comparing a resistance value of a resistive element under test to a reference resistance and outputting a result of the comparing that indicates whether the resistive open exists in the resistive element under test, wherein the result is detectable by the voltage contrast inspection. | 04-16-2009 |
20090244958 | HYBRID SUPERCONDUCTING-MAGNETIC MEMORY CELL AND ARRAY - In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array. | 10-01-2009 |
20090271134 | Methods and Apparatus for Determining a Switching History Time Constant in an Integrated Circuit Device - Techniques for inline measurement of a switching history time constant in an integrated circuit device are provided. A series of pulses is launched into a first stage of a delay chain comprising a plurality of delay stages connected in series and having a length greater than a decay length of at least an initial one of the series of pulses, such that the at least initial one of the series of pulses does not appear at a second stage of the delay chain. An amount of time between the launching of the initial one of the series of pulses and the appearance of at least one of the series of pulses at the second stage of the delay chain is determined. The switching history time constant is calculated as a function of a number of stages traversed by the at least one pulse, the determined amount of time, and the decay length of the at least initial one of the series of pulses based at least in part on a switching history of the integrated circuit device. | 10-29-2009 |
20120108434 | HYBRID SUPERCONDUCTING-MAGNETIC MEMORY CELL AND ARRAY - In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array. | 05-03-2012 |
20120161807 | SINGLE LEVEL OF METAL TEST STRUCTURE FOR DIFFERENTIAL TIMING AND VARIABILITY MEASUREMENTS OF INTEGRATED CIRCUITS - A test structure for an integrated circuit device includes one or more experiments selectively configured to receive one or more high-speed input signals as inputs thereto and to output at least one high-speed output signal therefrom, the one or more experiments each including two or more logic gates configured to determine differential delay characteristics of individual circuit devices, at a precision level on the order of picoseconds to less than 1 picosecond; and wherein the one or more sets of experiments are disposed, and are fully testable, at a first level of metal wiring (M1) in the integrated circuit device. | 06-28-2012 |
20120166898 | SINGLE LEVEL OF METAL TEST STRUCTURE FOR DIFFERENTIAL TIMING AND VARIABILITY MEASUREMENTS OF INTEGRATED CIRCUITS - A test structure for an integrated circuit device includes one or more experiments selectively configured to receive one or more high-speed input signals as inputs thereto and to output at least one high-speed output signal therefrom, the one or more experiments each including two or more logic gates configured to determine differential delay characteristics of individual circuit devices, at a precision level on the order of picoseconds to less than 1 picosecond; and wherein the one or more sets of experiments are disposed, and are fully testable, at a first level of metal wiring (Ml) in the integrated circuit device. | 06-28-2012 |
20120256281 | SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES - Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode. | 10-11-2012 |
20120256651 | TEST STRUCTURE FOR PARALLEL TEST IMPLEMENTED WITH ONE METAL LAYER - An integrated test circuit includes pads of a padset for testing multiple device under test units (MDUTs). The MDUTs each include devices under test (DUTs). A first integrated test circuit metal layer is patterned to connect the pads to N MDUTs such that a first set of pads are employed for enabling testing of each MDUT and a second set of pads are designated for testing individual DUTs associated with the enabled MDUTs such that N parallel tests may be concurrently performed. | 10-11-2012 |
20120286796 | ACTIVE 2-DIMENSIONAL ARRAY STRUCTURE FOR PARALLEL TESTING - A structure and method is provided for testing a 2-dimensional array of electrical devices, such as a 2-dimensional array in the first metal level (M1) of an electronic structure. The method for testing the 2-dimensional array provides a parallel test approach. The test structure provides a plurality of test pad structures to implement the parallel test approach. The test pad structures may include field effect transistors. | 11-15-2012 |
20120319085 | ARRAY OF QUANTUM SYSTEMS IN A CAVITY FOR QUANTUM COMPUTING - A device includes a volume bounded by electromagnetically conducting walls, an aperture in a bounding wall of the electromagnetically conducting walls, a plurality of quantum systems disposed within the volume and an electromagnetic field source coupled to the volume via the aperture. | 12-20-2012 |
20120319684 | MODULAR ARRAY OF FIXED-COUPLING QUANTUM SYSTEMS FOR QUANTUM INFORMATION PROCESSING - A quantum information processing system includes a first composite quantum system, a second composite quantum system, a plurality of electromagnetic field sources coupled to the system and an adjustable electromagnetic coupling between the first composite quantum system and the second composite quantum system. | 12-20-2012 |
20120326720 | MODULAR ARRAY OF FIXED-COUPLING QUANTUM SYSTEMS FOR QUANTUM INFORMATION PROCESSING - A quantum information processing system includes a first composite quantum system, a second composite quantum system, a plurality of electromagnetic field sources coupled to the system and an adjustable electromagnetic coupling between the first composite quantum system and the second composite quantum system. | 12-27-2012 |
20130288417 | SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES - Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode. | 10-31-2013 |
20130303379 | HYBRID SUPERCONDUCTING-MAGNETIC MEMORY CELL AND ARRAY - In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array. | 11-14-2013 |