Patent application number | Description | Published |
20110006389 | SUPPRESSING FRACTURES IN DICED INTEGRATED CIRCUITS - A semiconductor device has a singulated die having a substrate and a die edge. An interconnect dielectric layer is located on the substrate, and integrated circuit has interconnections located within the interconnect dielectric layer. A trench is located in the interconnect dielectric layer and between a seal ring and a remnant of the interconnect dielectric layer. The seal ring is located within the interconnect dielectric layer and between the trench and the integrated circuit, with the remnant of the interconnect dielectric layer being located between the trench and the edge of the die. | 01-13-2011 |
20110006415 | SOLDER INTERCONNECT BY ADDITION OF COPPER - A method of forming an electronic device provides an electronic device substrate having a solder bump pad located thereover. A nickel-containing layer is located over the solder bump pad. A copper-containing layer is formed on the nickel-containing layer prior to subjecting the electronic device to a reflow process. | 01-13-2011 |
20110195544 | SOLDER BUMP STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURE THEREFOR - The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening. | 08-11-2011 |
20120020028 | STACKED INTERCONNECT HEAT SINK - An electronic device includes an integrated circuit and a heat spreader. The integrated circuit includes a substrate with an active via located therein. The heat spreader includes a thermally conductive core. The active via is connected to a corresponding heat spreader via that passes through the thermally conductive core. | 01-26-2012 |
20130149857 | SOLDER INTERCONNECT BY ADDITION OF COPPER - A method of forming an electronic device provides an electronic device substrate having a solder bump pad located thereover. A nickel-containing layer is located over the solder bump pad. A copper-containing layer is formed on the nickel-containing layer prior to subjecting the electronic device to a reflow process. | 06-13-2013 |
20130280864 | STACKED INTERCONNECT HEAT SINK - A heat spreader that is configured to be attached to an integrated circuit substrate. The heat spreader includes a thermally conductive core and a heat spreader via that passes through the thermally conductive core. A connection point of the thermally conductive core is configured to form a solder connection to an integrated circuit substrate plug. | 10-24-2013 |
20140015127 | CONTACT SUPPORT PILLAR STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURE THEREFORE - In one aspect, there is provided a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and has a contact support pillar opening formed therein. Contact support pillars that comprise a conductive metal and have a metal extension are located within the opening of the passivation layer. | 01-16-2014 |
20140220760 | INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS INTO INTEGRATED CIRCUIT DESIGNS - A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously. | 08-07-2014 |