| Patent application number | Description | Published |
|---|
| 20080247101 | ELECTRONIC DEVICE AND METHOD - An IO buffer is formed having a substrate resistor at a support layer of a semiconductor on insulator substrate. A diode junction is formed between the substrate resistor and portion of the semiconductor on insulator substrate underlying the substrate resistor. In the event of a high-voltage event, current will flow through the diode junction. | 10-09-2008 |
| 20080305613 | METHOD FOR FABRICATING AN SOI DEFINED SEMICONDUCTOR DEVICE - Methods are provided for fabricating a semiconductor on insulator (SOI) component on a semiconductor layer/insulator/substrate structure. The method includes forming one or more shallow trench isolation (STI) regions extending through the semiconductor layer to the insulator. First and second openings are etched through the STI and the insulator using the remaining SOI material in the semiconductor layer as an etch mask. N— and P-type ions are implanted into the substrate through the openings to form to form N-doped and P-doped regions therein, such as an anode and a cathode of a semiconductor diode structure. The N-doped and P-doped regions are closely spaced and precisely aligned to each other by the SOI material in the semiconductor layer. Electrical contacts are then made to the N-doped and P-doped regions. | 12-11-2008 |
| 20090073758 | SRAM CELLS WITH ASYMMETRIC FLOATING-BODY PASS-GATE TRANSISTORS - The embodiments of the invention provide SRAM cells with asymmetric floating-body pass-gate transistors. More specifically, a semiconductor device includes an SRAM cell, a first pass-gate transistor, and a second pass-gate transistor. The first pass-gate transistor is connected to a first side of the SRAM cell, wherein the first pass-gate transistor comprises a first drain region and a first source region. The second pass-gate transistor is connected to a second side of the SRAM cell, wherein the second side is opposite the first side. The second pass-gate transistor comprises a second source region and a second drain region. Furthermore, the first source region and/or the second source region comprise a xenon implant. The first drain region and the second drain region each lack a xenon implant. | 03-19-2009 |
| 20090184372 | SOI SEMICONDUCTOR COMPONENTS AND METHODS FOR THEIR FABRICATION - SOI semiconductor components and methods for their fabrication are provided wherein the SOI semiconductor components include an MOS transistor in the supporting semiconductor substrate. In accordance with one embodiment the component comprises a semiconductor on insulator (SOI) substrate having a first semiconductor layer, a layer of insulator on the first semiconductor layer, and a second semiconductor layer overlying the layer of insulator. The component includes source and drain regions of a first conductivity type and first doping concentration in the first semiconductor layer. A channel region of a second conductivity type is defined between the source and drain regions. A gate insulator and gate electrode overlie the channel region. A drift region of the first conductivity type is located between the channel region and the drain region, the drift region having a second doping concentration less than the first doping concentration of the first conductivity determining dopant. | 07-23-2009 |
| 20100084729 | INTEGRATED PHOTODIODE FOR SEMICONDUCTOR SUBSTRATES - A substrate section that is at least partially fabricated to include contact elements and materials. The substrate section includes doped regions that have a heavily doped N-type region and a heavily doped P-type region adjacent to one another. An exterior surface of the substrate has a topography that includes a light-transparent region in which light, from a light source, is able to reach a surface of the substrate. An application of light onto the light transparent region is sufficient to cause a voltage potential to form across a junction of the heavily doped regions. The substrate section may further comprise one or more electrical contacts, positioned on the substrate section to conduct current, resulting from the voltage potential created with application of light onto the light transparent region, to a circuit on the semiconductor substrate. | 04-08-2010 |
